JPS57102071A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57102071A JPS57102071A JP17717480A JP17717480A JPS57102071A JP S57102071 A JPS57102071 A JP S57102071A JP 17717480 A JP17717480 A JP 17717480A JP 17717480 A JP17717480 A JP 17717480A JP S57102071 A JPS57102071 A JP S57102071A
- Authority
- JP
- Japan
- Prior art keywords
- film
- regions
- approximately
- gate
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To form a source and a drain using shallow diffusion regions having low concentration as companion regions by implanting ions under a condition that a film body containing impurities is shaped to a side surface of a gate by and annealing. CONSTITUTION:The silicon dioxide film or silicon film 11 containing phosphorus or arsenic by approximately 10 <21>cm<-3> as the impurities is attached onto the whole surface of a semiconductor substrate 1 to which a field oxide film 10, a gate insulating film 4 and a gate electrode 5 are formed. When executing reactive ion etching, etching advances only in the vertical direction, and the sections 12 of the film 11 are left on the side surfaces of the gate insulating film 4 and the gate electrode 5. When the ions of phosphorus or arsenic are implanted by approximately 10<15>cm<-2> and the surface is thermally treated for approximately thirty min. in a nitrogen atmosphere of 1,000 deg.C, N<+> regions 22, 32 having high concentration and the accompany regions 21, 31, which have low concentration diffusion thereof is shallow, are shaped to the source and the drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17717480A JPS57102071A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17717480A JPS57102071A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57102071A true JPS57102071A (en) | 1982-06-24 |
Family
ID=16026470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17717480A Pending JPS57102071A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102071A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60134469A (en) * | 1983-12-22 | 1985-07-17 | Toshiba Corp | Manufacture of semiconductor device |
| US4653173A (en) * | 1985-03-04 | 1987-03-31 | Signetics Corporation | Method of manufacturing an insulated gate field effect device |
| JPH01130569A (en) * | 1987-11-17 | 1989-05-23 | Nec Corp | Manufacture of semiconductor device provided with low and high concentration diffusion regions |
-
1980
- 1980-12-17 JP JP17717480A patent/JPS57102071A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60134469A (en) * | 1983-12-22 | 1985-07-17 | Toshiba Corp | Manufacture of semiconductor device |
| US4653173A (en) * | 1985-03-04 | 1987-03-31 | Signetics Corporation | Method of manufacturing an insulated gate field effect device |
| JPH01130569A (en) * | 1987-11-17 | 1989-05-23 | Nec Corp | Manufacture of semiconductor device provided with low and high concentration diffusion regions |
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