JPS6473769A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6473769A JPS6473769A JP23130987A JP23130987A JPS6473769A JP S6473769 A JPS6473769 A JP S6473769A JP 23130987 A JP23130987 A JP 23130987A JP 23130987 A JP23130987 A JP 23130987A JP S6473769 A JPS6473769 A JP S6473769A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- ion implantation
- source
- gate electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form source and drain symmetrically and to produce light doped drain without producing side wall by performing ion implantation with a trapezoid gate electrode where the side surface slants from vertical position with respect to the substrate surface. CONSTITUTION:A poly Si film 3 is formed on a gate oxide film 2 of P-type Si substrate 1. A trapezoid poly Si gate electrode 3 where the side surface slants from the vertical direction of substrate by theta1=10 deg. is produced. Ion implantation is performed with the electrode 3 as a mask to produce N<+> source 4s and drain 4d. Ion implantation is performed with theta2=7 deg. to prevent channeling effect of impurities. Heat treatment is performed, the source and drain layers 4s and 4d which are symmetrical in reference to a gate electrode 3, and symmetrical property is obtained regardless of the direction of source and drain. Also, without producing side wall, a MOSFET in light dope drain(LDD) structure is obtained by one ion implantation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23130987A JPS6473769A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23130987A JPS6473769A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6473769A true JPS6473769A (en) | 1989-03-20 |
Family
ID=16921605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23130987A Pending JPS6473769A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6473769A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02191340A (en) * | 1988-10-24 | 1990-07-27 | Mitsubishi Electric Corp | Field effect semiconductor device and its manufacture |
US5355006A (en) * | 1991-09-09 | 1994-10-11 | Sharp Kabushiki Kaisha | Semiconductor memory device with source and drain limited to areas near the gate electrodes |
WO2007017982A1 (en) * | 2005-08-11 | 2007-02-15 | Sharp Kabushiki Kaisha | Circuit board, electronic device, and process for producing circuit board |
-
1987
- 1987-09-16 JP JP23130987A patent/JPS6473769A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02191340A (en) * | 1988-10-24 | 1990-07-27 | Mitsubishi Electric Corp | Field effect semiconductor device and its manufacture |
US5355006A (en) * | 1991-09-09 | 1994-10-11 | Sharp Kabushiki Kaisha | Semiconductor memory device with source and drain limited to areas near the gate electrodes |
WO2007017982A1 (en) * | 2005-08-11 | 2007-02-15 | Sharp Kabushiki Kaisha | Circuit board, electronic device, and process for producing circuit board |
US8035103B2 (en) | 2005-08-11 | 2011-10-11 | Sharp Kabushiki Kaisha | Circuit board, electronic device, and method for producing circuit board |
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