JPS5538034A - Manufacturing of semiconductor integrated circuit - Google Patents
Manufacturing of semiconductor integrated circuitInfo
- Publication number
- JPS5538034A JPS5538034A JP11079478A JP11079478A JPS5538034A JP S5538034 A JPS5538034 A JP S5538034A JP 11079478 A JP11079478 A JP 11079478A JP 11079478 A JP11079478 A JP 11079478A JP S5538034 A JPS5538034 A JP S5538034A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- oxide film
- polysilicon
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To realize high stabilization of gate breakdown voltage, by leaving a thick oxide film at the edge of the gate region of MOS semiconductor integrated circuit, and providing polysilicon electrodes in the gate region and the diffused region simultaneously.
CONSTITUTION: Oxide film 3 is formed on the surface of semiconductor base 1, and then, leaving part 31, which is to become gate oxide film, other oxide film 3 on the active region is removed. After this, a source region and a drain region are formed by diffusing an impurity from the surface, and the entire surface is covered with polysilicon 4. Then, the silicon in the parts other than polysilicon layer 4 in the part which is to become a gate electrode and polysilicon 41 on the diffused region is removed; and by implanting ions from the surface, high impurity concentration layer 52 is provided, and after protective film 7, such as PSG film, is grown, this is heat treated. By this, the gate electrode side surface and the source-drain region are partitioned by a thick oxide film, and thereby it is possible to stabilize gate breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079478A JPS5538034A (en) | 1978-09-11 | 1978-09-11 | Manufacturing of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079478A JPS5538034A (en) | 1978-09-11 | 1978-09-11 | Manufacturing of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5538034A true JPS5538034A (en) | 1980-03-17 |
Family
ID=14544795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11079478A Pending JPS5538034A (en) | 1978-09-11 | 1978-09-11 | Manufacturing of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5538034A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57121278A (en) * | 1981-01-20 | 1982-07-28 | Sanyo Electric Co Ltd | Manufacture of mos type transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037499A (en) * | 1973-06-20 | 1975-04-08 | ||
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
| JPS5286075A (en) * | 1976-01-12 | 1977-07-16 | Sony Corp | Formation of minute patterns |
| JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
-
1978
- 1978-09-11 JP JP11079478A patent/JPS5538034A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037499A (en) * | 1973-06-20 | 1975-04-08 | ||
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
| JPS5286075A (en) * | 1976-01-12 | 1977-07-16 | Sony Corp | Formation of minute patterns |
| JPS5320776A (en) * | 1976-08-10 | 1978-02-25 | Mitsubishi Electric Corp | Production of metal insulation film semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57121278A (en) * | 1981-01-20 | 1982-07-28 | Sanyo Electric Co Ltd | Manufacture of mos type transistor |
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