JPS645069A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS645069A JPS645069A JP16179387A JP16179387A JPS645069A JP S645069 A JPS645069 A JP S645069A JP 16179387 A JP16179387 A JP 16179387A JP 16179387 A JP16179387 A JP 16179387A JP S645069 A JPS645069 A JP S645069A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ions
- impurity
- oxide film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To increase an oxidation speed and suppress the rediffusion of an impurity by a method wherein, after a high impurity concentration polycrystalline silicon gate electrode is formed, boron ions are implanted and oxidization is carried out by oxidizing agent whose diffusion coefficient is equivalent to or larger than that of the high concentration impurity. CONSTITUTION:A silicon oxide film 2 which is to be a gate oxide film is formed on the surface of an n-type silicon substrate 1 and a high concentration phosphorus-doped polycrystalline silicon film 3 is selectively formed on the film 2 to form a gate electrode. After the film 2 is removed with the film 3 as a mask, a photoresist film 4 is formed on the film 3 and an offset region and BF2 ions are implanted over the whole surface to form a source region 5 and a drain region 6. Then, after the film 4 is removed, a silicon oxide film 7 is formed in a vapor atmosphere and, at the same time, BF2 ions are diffused to give the regions 5 and 6 required depths. After that, a low impurity concentration p-type offset region 8 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16179387A JPS645069A (en) | 1987-06-29 | 1987-06-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16179387A JPS645069A (en) | 1987-06-29 | 1987-06-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645069A true JPS645069A (en) | 1989-01-10 |
Family
ID=15742019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16179387A Pending JPS645069A (en) | 1987-06-29 | 1987-06-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645069A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649163B2 (en) * | 1979-04-13 | 1981-11-20 | ||
JPS60150672A (en) * | 1984-01-18 | 1985-08-08 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-06-29 JP JP16179387A patent/JPS645069A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649163B2 (en) * | 1979-04-13 | 1981-11-20 | ||
JPS60150672A (en) * | 1984-01-18 | 1985-08-08 | Toshiba Corp | Manufacture of semiconductor device |
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