JPS5680169A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5680169A JPS5680169A JP15789279A JP15789279A JPS5680169A JP S5680169 A JPS5680169 A JP S5680169A JP 15789279 A JP15789279 A JP 15789279A JP 15789279 A JP15789279 A JP 15789279A JP S5680169 A JPS5680169 A JP S5680169A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- region
- gate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To prevent the short channel effect in a semiconductor device by making the gate portion lower than the source and drain region so that the depth of the junction is zero or negative. CONSTITUTION:After a field oxide film 10 is formed on a P type Si substrate 9, a polycrystalline Si 11, an SiO2 film 12 and an Si nitride film 13 are formed and an Si oxide film 14 is formed by selective oxidation through the window in the film 13. In this case, the whole polycrystalline Si 11 and a portion of the substrate 9 are oxidized. Then, the ion implantation of an N type impurity is performed to form a source and drain regions 15. After the Si oxide film 14 is removed, a gate oxide film 16 is formed and an electrode 17 is provided, then on the whole surface, an Si oxide film 18 is formed. Thus, because the gate region is deeper than the drain region, the short channel effect can be prevented and so, each region can be smaller, so that a larger-scale integration is made possible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15789279A JPS5680169A (en) | 1979-12-04 | 1979-12-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15789279A JPS5680169A (en) | 1979-12-04 | 1979-12-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5680169A true JPS5680169A (en) | 1981-07-01 |
Family
ID=15659689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15789279A Pending JPS5680169A (en) | 1979-12-04 | 1979-12-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420664A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Manufacture of semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363878A (en) * | 1976-11-18 | 1978-06-07 | Seiko Epson Corp | Production of semiconductor device |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
-
1979
- 1979-12-04 JP JP15789279A patent/JPS5680169A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363878A (en) * | 1976-11-18 | 1978-06-07 | Seiko Epson Corp | Production of semiconductor device |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420664A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Manufacture of semiconductor device |
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