JPS6467911A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6467911A JPS6467911A JP22462687A JP22462687A JPS6467911A JP S6467911 A JPS6467911 A JP S6467911A JP 22462687 A JP22462687 A JP 22462687A JP 22462687 A JP22462687 A JP 22462687A JP S6467911 A JPS6467911 A JP S6467911A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- ion implantation
- impurities
- silicon substrate
- thick oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To control thresholds of a MIS transistor and decrease the number of ion implantation as well, by introducing impurities not only into a part of a thin oxide film but also into a thick oxide film collectively after forming a thick oxide film at a semiconductor device having regions of element isolation and element formation. CONSTITUTION:A thin oxide film 2 is formed on the principal surface of a P-type silicon substrate 1 and a blocking material 8 is formed at a part where an element formation region is formed. Then, a thick oxide film 3 is formed at a part where the blocking material 8 is not formed. After that, the blocking material 8 is removed. And then, a layer having highly concentrated impurities is formed in the silicon substrate 1 by performing ion implantation 6. If ion implantation is carried out on condition that nearly 50% or more impurities which are implanted on the thick oxide film 3 reach into the silicon substrate 1, peak positions of impurity concentration are exhibited by an ion implantation locus 4. When the impurities are introduced by ion implantation 7 at shallow positions below thin oxide film 2, the peak positions of impurity concentration are exhibited by the ion implantation locus 5. In such a case, the impurities do not reach the silicon substrate 1 at the thick oxide film 3 and they are introduced only into the region of thin oxide film 2 selectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62224626A JPH0760809B2 (en) | 1987-09-08 | 1987-09-08 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62224626A JPH0760809B2 (en) | 1987-09-08 | 1987-09-08 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6467911A true JPS6467911A (en) | 1989-03-14 |
JPH0760809B2 JPH0760809B2 (en) | 1995-06-28 |
Family
ID=16816654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62224626A Expired - Lifetime JPH0760809B2 (en) | 1987-09-08 | 1987-09-08 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0760809B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091324A (en) * | 1990-08-10 | 1992-02-25 | Advanced Micro Devices, Inc. | Process for producing optimum intrinsic, long channel, and short channel mos devices in vlsi structures |
US6451645B1 (en) | 2000-07-12 | 2002-09-17 | Denso Corp | Method for manufacturing semiconductor device with power semiconductor element and diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4160991A (en) * | 1977-10-25 | 1979-07-10 | International Business Machines Corporation | High performance bipolar device and method for making same |
JPS5687340A (en) * | 1979-12-19 | 1981-07-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
-
1987
- 1987-09-08 JP JP62224626A patent/JPH0760809B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4160991A (en) * | 1977-10-25 | 1979-07-10 | International Business Machines Corporation | High performance bipolar device and method for making same |
JPS5687340A (en) * | 1979-12-19 | 1981-07-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091324A (en) * | 1990-08-10 | 1992-02-25 | Advanced Micro Devices, Inc. | Process for producing optimum intrinsic, long channel, and short channel mos devices in vlsi structures |
US6451645B1 (en) | 2000-07-12 | 2002-09-17 | Denso Corp | Method for manufacturing semiconductor device with power semiconductor element and diode |
Also Published As
Publication number | Publication date |
---|---|
JPH0760809B2 (en) | 1995-06-28 |
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