JPS6468943A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6468943A JPS6468943A JP22741287A JP22741287A JPS6468943A JP S6468943 A JPS6468943 A JP S6468943A JP 22741287 A JP22741287 A JP 22741287A JP 22741287 A JP22741287 A JP 22741287A JP S6468943 A JPS6468943 A JP S6468943A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- active region
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To prevent the increase in threshold value of a MOS transistor, which is formed in an active region, by implanting ions as channel stopper impurities through an element isolating silicon oxide film. CONSTITUTION:On a substrate 1, a silicon oxide film 2, a polycrystalline silicon layer 3 and a silicon nitride film 4 are formed. The pattern of photoresist 5 is formed so as to cover an active region. The nitride film 4 beneath the resist 5 is made to remain, and the resist 5 is removed. The entire surface is oxidized, and a field oxide film 6 of silicon is grown. The remaining nitride film 4, the silicon 3 beneath the film 4 and the oxide film 2 are removed, and a silicon oxide film 2 is grown. The film is used as a gate insulating film 11. Boron ions B are implanted into the entire surface through the oxide film 6 as the impurities for a channel stopper. A channel stopper layer 7 is formed. Thus, the increase in threshold value of a MOS transistor formed in the active region can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22741287A JPS6468943A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22741287A JPS6468943A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468943A true JPS6468943A (en) | 1989-03-15 |
Family
ID=16860435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22741287A Pending JPS6468943A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468943A (en) |
-
1987
- 1987-09-09 JP JP22741287A patent/JPS6468943A/en active Pending
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