JPS6468943A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6468943A
JPS6468943A JP22741287A JP22741287A JPS6468943A JP S6468943 A JPS6468943 A JP S6468943A JP 22741287 A JP22741287 A JP 22741287A JP 22741287 A JP22741287 A JP 22741287A JP S6468943 A JPS6468943 A JP S6468943A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
active region
channel stopper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22741287A
Other languages
Japanese (ja)
Inventor
Kiyouzou Sekiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22741287A priority Critical patent/JPS6468943A/en
Publication of JPS6468943A publication Critical patent/JPS6468943A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the increase in threshold value of a MOS transistor, which is formed in an active region, by implanting ions as channel stopper impurities through an element isolating silicon oxide film. CONSTITUTION:On a substrate 1, a silicon oxide film 2, a polycrystalline silicon layer 3 and a silicon nitride film 4 are formed. The pattern of photoresist 5 is formed so as to cover an active region. The nitride film 4 beneath the resist 5 is made to remain, and the resist 5 is removed. The entire surface is oxidized, and a field oxide film 6 of silicon is grown. The remaining nitride film 4, the silicon 3 beneath the film 4 and the oxide film 2 are removed, and a silicon oxide film 2 is grown. The film is used as a gate insulating film 11. Boron ions B are implanted into the entire surface through the oxide film 6 as the impurities for a channel stopper. A channel stopper layer 7 is formed. Thus, the increase in threshold value of a MOS transistor formed in the active region can be prevented.
JP22741287A 1987-09-09 1987-09-09 Manufacture of semiconductor device Pending JPS6468943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22741287A JPS6468943A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22741287A JPS6468943A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6468943A true JPS6468943A (en) 1989-03-15

Family

ID=16860435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22741287A Pending JPS6468943A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6468943A (en)

Similar Documents

Publication Publication Date Title
JPS6433969A (en) Manufacture of semiconductor device
US4713329A (en) Well mask for CMOS process
EP0414400A3 (en) Mosfet depletion device
JPS6468943A (en) Manufacture of semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5583267A (en) Method of fabricating semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5538019A (en) Manufacturing of semiconductor device
JPS6422069A (en) Manufacture of semiconductor memory device
JPS5533037A (en) Manufacture of semiconductor device
JPS6461928A (en) Manufacture of semiconductor device
JPS6467911A (en) Manufacture of semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS56126957A (en) Manufacture of semiconductor device
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS54104782A (en) Mos type semiconductor device
JPS56115570A (en) Manufacture of semiconductor device
JPS63160277A (en) Manufacture of semiconductor element
JPS56147447A (en) Manufacture of mosic
JPS6477955A (en) Manufacture of semiconductor device
JPS57207348A (en) Manufacture of semiconductor device
JPS57211263A (en) Manufacture of complementary mos semiconductor device
JPS54134579A (en) Mis semiconductor device
JPS6424463A (en) Semiconductor device and manufacture thereof