JPS6464236A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6464236A
JPS6464236A JP62220742A JP22074287A JPS6464236A JP S6464236 A JPS6464236 A JP S6464236A JP 62220742 A JP62220742 A JP 62220742A JP 22074287 A JP22074287 A JP 22074287A JP S6464236 A JPS6464236 A JP S6464236A
Authority
JP
Japan
Prior art keywords
layer
implanting
tin
film
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62220742A
Other languages
Japanese (ja)
Other versions
JPH0734441B2 (en
Inventor
Masakatsu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62220742A priority Critical patent/JPH0734441B2/en
Publication of JPS6464236A publication Critical patent/JPS6464236A/en
Publication of JPH0734441B2 publication Critical patent/JPH0734441B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a wiring, the resistance value of which hardly changes and which has fine size, by selectively implanting N ions into a Ti film in high concentration, respectively shaping TiN to an implanting layer and a Ti silicide to a region except the implanting layer through annealing and selectively removing only TiN through a wet etching method. CONSTITUTION:Double layer films consisting of a polysilicon film 3 and a Ti film 4 are formed through a process in which a gate for a MOS transistor element is shaped, and nitrogen ions are implanted, using a photo-resist film 5 as a shielding mask. The photo-resist 5 is gotten rid of, and TiN 8 is formed to a nitrogen ion implanting layer and a Ti silicide layer 9 to a non-implanting layer respectively through annealing in an inert gas such as Ar. The TiN layer 8 is melted and the Ti silicide layer 9 is left by dipping the whole into the mixed liquid of H2O2+NH4OH+H2O. The Ti silicide layer is stabilized through annealing at 850-900 deg.C. A polysilicon film under the residual implanting layer is removed by using a dry etching method, thus shaping a wiring pattern.
JP62220742A 1987-09-03 1987-09-03 Method for manufacturing semiconductor device Expired - Lifetime JPH0734441B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220742A JPH0734441B2 (en) 1987-09-03 1987-09-03 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220742A JPH0734441B2 (en) 1987-09-03 1987-09-03 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6464236A true JPS6464236A (en) 1989-03-10
JPH0734441B2 JPH0734441B2 (en) 1995-04-12

Family

ID=16755817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220742A Expired - Lifetime JPH0734441B2 (en) 1987-09-03 1987-09-03 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0734441B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987374A (en) * 1996-07-08 1999-11-16 Toyota Jidosha Kabushiki Kaisha Vehicle traveling guidance system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987374A (en) * 1996-07-08 1999-11-16 Toyota Jidosha Kabushiki Kaisha Vehicle traveling guidance system

Also Published As

Publication number Publication date
JPH0734441B2 (en) 1995-04-12

Similar Documents

Publication Publication Date Title
JPS5736842A (en) Semiconductor integrated circuit device
JPS6464236A (en) Manufacture of semiconductor device
JPS57192063A (en) Manufacture of semiconductor device
JPS57155777A (en) Mos transistor
JPH01207973A (en) Manufacture of mos type semiconductor device
JPS5694773A (en) Manufacturing method of semiconductor device
JPS5759381A (en) Manufacture of semicondutor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS57159042A (en) Semiconductor device and manufacture thereof
JPS6446974A (en) Manufacture of semiconductor device
JPS5638868A (en) Manufacture of semiconductor device
JPS5530867A (en) Method of making semiconductor device
JPS6439773A (en) Manufacture of semiconductor device
JPS57106123A (en) Manufacture of semiconductor device
KR890005197B1 (en) Manufacture of cmos semiconductor device
JPS644025A (en) Manufacture of semiconductor device
JPS5783061A (en) Manufacture of semiconductor integrated circuit
JPS6464351A (en) Manufacture of semiconductor device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS5613772A (en) Preparation of semiconductor device
JPS6489371A (en) Manufacture of semiconductor storage device
DE3664021D1 (en) Method of producing an integrated circuit of mos transisitors with metal silicide electrodes
JPS5617026A (en) Manufacture of semiconductor device
JPS5799768A (en) Manufacture of complementary type metal oxide semiconductor device
JPS56114376A (en) Manufacture of semiconductor device