JPS5694773A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5694773A
JPS5694773A JP17103379A JP17103379A JPS5694773A JP S5694773 A JPS5694773 A JP S5694773A JP 17103379 A JP17103379 A JP 17103379A JP 17103379 A JP17103379 A JP 17103379A JP S5694773 A JPS5694773 A JP S5694773A
Authority
JP
Japan
Prior art keywords
impurity
molybdenum silicide
film
conductive film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17103379A
Other languages
Japanese (ja)
Other versions
JPS6043025B2 (en
Inventor
Shinichi Inoue
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54171033A priority Critical patent/JPS6043025B2/en
Publication of JPS5694773A publication Critical patent/JPS5694773A/en
Publication of JPS6043025B2 publication Critical patent/JPS6043025B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simplify a manufacturing process and to seek a high integration by a method wherein an impurity is contained in a conductive film to be an electrode and it is utilized as a diffusion source of an impurity area. CONSTITUTION:After a P well 2 is formed in an n type semiconductor substrate 1, a field oxide film 5, a gate oxide film 7P and 7N are formed. Next thereto, a molybdenum silicide film 10N containing an n type impurity P as a conductive film is formed coatedly and a molybdenum silicide film 10P containing a p type impurity boron as a conductive film is formed coatedly. Next, by performing a heat treatment taking the molybdenum silicide films 10N, 10P as the diffusion source, an impurity diffusion is performed to form sources 3P, 3N of a transistor and drains 4P, 4N of the transistor. Next, the molybdenum silicide 10N, 10P ar patterned and gate electrodes 6P, 6N, a source electrode 8 and a drain electrode 8' are formed.
JP54171033A 1979-12-28 1979-12-28 Manufacturing method of semiconductor device Expired JPS6043025B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54171033A JPS6043025B2 (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54171033A JPS6043025B2 (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5694773A true JPS5694773A (en) 1981-07-31
JPS6043025B2 JPS6043025B2 (en) 1985-09-26

Family

ID=15915834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54171033A Expired JPS6043025B2 (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6043025B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890760A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Lamination type semiconductor device
JPS5890759A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Stacking type semiconductor device
JPS58141553A (en) * 1982-02-18 1983-08-22 Nec Corp Complementary metal oxide semiconductor element
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS6072259A (en) * 1983-08-26 1985-04-24 シ−メンス，アクチエンゲゼルシヤフト Method of producing high density integrated cmos field effect transistor
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Integrated circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890760A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Lamination type semiconductor device
JPS5890759A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Stacking type semiconductor device
JPH0221143B2 (en) * 1981-11-25 1990-05-11 Mitsubishi Electric Corp
JPH0221142B2 (en) * 1981-11-25 1990-05-11 Mitsubishi Electric Corp
JPS58141553A (en) * 1982-02-18 1983-08-22 Nec Corp Complementary metal oxide semiconductor element
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS6072259A (en) * 1983-08-26 1985-04-24 シ−メンス，アクチエンゲゼルシヤフト Method of producing high density integrated cmos field effect transistor
JPS6097663A (en) * 1983-10-07 1985-05-31 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Integrated circuit
JPH0321101B2 (en) * 1983-10-07 1991-03-20 Fuiritsupusu Furuuiranpenfuaburiken Nv

Also Published As

Publication number Publication date
JPS6043025B2 (en) 1985-09-26

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