JPS5618418A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5618418A
JPS5618418A JP9442679A JP9442679A JPS5618418A JP S5618418 A JPS5618418 A JP S5618418A JP 9442679 A JP9442679 A JP 9442679A JP 9442679 A JP9442679 A JP 9442679A JP S5618418 A JPS5618418 A JP S5618418A
Authority
JP
Japan
Prior art keywords
aluminum
ions
implanted
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9442679A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Kaoru Inoue
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9442679A priority Critical patent/JPS5618418A/en
Publication of JPS5618418A publication Critical patent/JPS5618418A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To form a P-type deep diffused layer readily and securely by forming a thin aluminum film after introducing boron into the surface of an N-type semiconductor substrate, implanting inactive ions into the surface of the thin film, and performing heat treatment. CONSTITUTION:Boron ions are implanted into the N-type Si substrate 1 at, e.g., 100 KeV, and an implanted region 1a is formed. Then, the aluminum film 2 with a thickness of about 700Angstrom is formed, and the inactive ions, e.g., argon ions, are implanted at 100KeV. At this time, aluminum atoms are introduced into the Si substrate by the knock-on effect, and the aluminum layer 3 is securely formed. Finally, a CVD SiO2 film 4 with a thickness of about 5,000Angstrom is formed, heat treatment is performed at 1,100 deg.C for 20hr, thereby the P-type deep region 3' is formed. In this method, the P-type deep diffused region can be readily obtained by using aluminum which is hard to diffuse.
JP9442679A 1979-07-25 1979-07-25 Manufacture of semiconductor device Pending JPS5618418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9442679A JPS5618418A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9442679A JPS5618418A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5618418A true JPS5618418A (en) 1981-02-21

Family

ID=14109897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9442679A Pending JPS5618418A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5618418A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0270937A (en) * 1988-09-05 1990-03-09 Mitsubishi Motors Corp Acceleration slip preventing device for vehicle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0270937A (en) * 1988-09-05 1990-03-09 Mitsubishi Motors Corp Acceleration slip preventing device for vehicle

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