JPS5721815A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5721815A JPS5721815A JP9707680A JP9707680A JPS5721815A JP S5721815 A JPS5721815 A JP S5721815A JP 9707680 A JP9707680 A JP 9707680A JP 9707680 A JP9707680 A JP 9707680A JP S5721815 A JPS5721815 A JP S5721815A
- Authority
- JP
- Japan
- Prior art keywords
- region
- isolating
- nucleus
- crystalline
- crystalline defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent the decrease of the yield of manufacturing a semiconductor device due to crystalline defect by forming the nucleus of the crystalline defect in an electrically inactive region on the surface of a semiconductor substrate, heat treating it, and absorbing the detect of the active region to the inactive region.
CONSTITUTION: When high density impurtity diffusion is executed in an element isolating regin of an integrated cirxuit to form the nucleus of the crystalline defect, boron is so diffused that the sheet resistance becomes 400Ω/square on the part to become an element isolating region 13 on a silicon substrate 11, and n-type epitaxial layer 14 is then formed. Subsequently, a thermally oxidized film 15 is formed, and an opening 15a for diffusing the isolating region is formed. The boron is diffused through the opening to form the sheet resistance of the isolating regin to 50Ω/ square. Then, the nucleus of crystalline defect are formed at 107W108 pieces/cm3. Eventually, it is heat treated at 1100°C in oxygen and nitrogen mixture atmosphere for approx. 2 hours. The crystalline defects of the isolating region are grown to absorb the defects in the active layer 14b.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9707680A JPS5721815A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9707680A JPS5721815A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5721815A true JPS5721815A (en) | 1982-02-04 |
Family
ID=14182544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9707680A Pending JPS5721815A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721815A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58187985A (en) * | 1982-04-27 | 1983-11-02 | セイコーエプソン株式会社 | Manufacture of semiconductor device |
| JPH09232324A (en) * | 1996-02-23 | 1997-09-05 | Nec Corp | Semiconductor substrate and its manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5042778A (en) * | 1973-08-18 | 1975-04-18 | ||
| JPS52109368A (en) * | 1976-03-10 | 1977-09-13 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-07-15 JP JP9707680A patent/JPS5721815A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5042778A (en) * | 1973-08-18 | 1975-04-18 | ||
| JPS52109368A (en) * | 1976-03-10 | 1977-09-13 | Hitachi Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58187985A (en) * | 1982-04-27 | 1983-11-02 | セイコーエプソン株式会社 | Manufacture of semiconductor device |
| JPH09232324A (en) * | 1996-02-23 | 1997-09-05 | Nec Corp | Semiconductor substrate and its manufacture |
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