JPS54134587A - Production of poly-crystal semiconductor film - Google Patents

Production of poly-crystal semiconductor film

Info

Publication number
JPS54134587A
JPS54134587A JP4246378A JP4246378A JPS54134587A JP S54134587 A JPS54134587 A JP S54134587A JP 4246378 A JP4246378 A JP 4246378A JP 4246378 A JP4246378 A JP 4246378A JP S54134587 A JPS54134587 A JP S54134587A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor film
poly
solid
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4246378A
Other languages
Japanese (ja)
Other versions
JPS5826185B2 (en
Inventor
Katsumi Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP53042463A priority Critical patent/JPS5826185B2/en
Publication of JPS54134587A publication Critical patent/JPS54134587A/en
Publication of JPS5826185B2 publication Critical patent/JPS5826185B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To obtain a cheap semiconductor device by causing liquid applied diffusion materials to soak through a substrate previously and growing a poly-crystal semiconductor film on the substrate after making applied diffusion materials into a solid state.
CONSTITUTION: When heat is applied to substrate 1 whixh applied diffusion materials soaks through, pores of substrate 1 are buried with solid. Next, N+ low- resistivity layer 2 and N layer 3 having a comparatively low impurity density are formed in order on processed substrate 1, and a silicon semiconductor film to constitute a solar battery is formed. Next, though P-type conductive layer 4 is formed, the diffusion of p-type impurity from the reverse face is stopped because pores of substrate 1 are buried with solid.
COPYRIGHT: (C)1979,JPO&Japio
JP53042463A 1978-04-10 1978-04-10 Method for manufacturing polycrystalline semiconductor film Expired JPS5826185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53042463A JPS5826185B2 (en) 1978-04-10 1978-04-10 Method for manufacturing polycrystalline semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53042463A JPS5826185B2 (en) 1978-04-10 1978-04-10 Method for manufacturing polycrystalline semiconductor film

Publications (2)

Publication Number Publication Date
JPS54134587A true JPS54134587A (en) 1979-10-19
JPS5826185B2 JPS5826185B2 (en) 1983-06-01

Family

ID=12636757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53042463A Expired JPS5826185B2 (en) 1978-04-10 1978-04-10 Method for manufacturing polycrystalline semiconductor film

Country Status (1)

Country Link
JP (1) JPS5826185B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369767A (en) * 1989-08-10 1991-03-26 Hiroshi Suzuki Building storing device and bay window-storing unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369767A (en) * 1989-08-10 1991-03-26 Hiroshi Suzuki Building storing device and bay window-storing unit

Also Published As

Publication number Publication date
JPS5826185B2 (en) 1983-06-01

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