JPS60128623A - Wafer processing jig - Google Patents

Wafer processing jig

Info

Publication number
JPS60128623A
JPS60128623A JP23711383A JP23711383A JPS60128623A JP S60128623 A JPS60128623 A JP S60128623A JP 23711383 A JP23711383 A JP 23711383A JP 23711383 A JP23711383 A JP 23711383A JP S60128623 A JPS60128623 A JP S60128623A
Authority
JP
Japan
Prior art keywords
wafer
protective film
processing jig
fluororesin
retaining grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23711383A
Other languages
Japanese (ja)
Inventor
Hachiro Hiratsuka
平塚 八郎
Ayako Shimazaki
嶋崎 綾子
Chiyo Mayahara
馬屋原 千代
Rie Yamayoshi
山吉 理恵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP23711383A priority Critical patent/JPS60128623A/en
Publication of JPS60128623A publication Critical patent/JPS60128623A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To contrive improvement of the yield of production by a method wherein a protective film consisting of fluororesin is formed on the surface region of wafer retaining grooves and wafer-side-face-retaining grooves, and quartz is adopted as the material for a base, thereby enabling to enhance the efficiency of cleaning, to prevent the chipping of the wafer and to prevent contamination generating on the wafer. CONSTITUTION:A base 1 and its side walls are formed by quartz. Wafer retaining grooves 4 are formed on the bottom part 3 of the base leaving the prescribed intervals, and a protective film 5 consisting of fluororesin is formed on the surface region of said grooves. On the side wall 2, wafer side face retaining grooves 7 to be used for retaining the side edge part of the wafer are perforated in slit form, and a protective film 5 consisting of fluororesin is formed on the surface region of the retaining grooves. According to this wafer processing jig, as the protective film consisting of fluorotesin is coated on the whole surface, the chipping on the circumferential part of the wafer 6 generating when it is taken in or out can be prevented by the elasticity of the protective film 5.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、基板処理治具に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a substrate processing jig.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来、略円板形の半導体ウェハ(以下、単にウェハと記
す。)を保持する治具として、フッ素樹脂で形成された
基板処理治具が使用されている。而して、この基板処理
治具は、強度を向上するために複雑な構造を有している
。このため、表面積が大きくなシ、洗浄液や純水洗浄で
の洗浄効率が悪い。その結果、このような基板処理治具
を使用すると、ウニ・・の汚染を招く問題があった。
Conventionally, a substrate processing jig made of fluororesin has been used as a jig for holding a substantially disk-shaped semiconductor wafer (hereinafter simply referred to as a wafer). Therefore, this substrate processing jig has a complicated structure in order to improve its strength. Therefore, the surface area is large and cleaning efficiency with cleaning liquid or pure water is poor. As a result, when such a substrate processing jig is used, there is a problem of contamination with sea urchins.

この問題を解消するために、洗浄効率が高くしかも強度
も高い石英からなる基板処理治具が使用されている。し
かしながら、この基板処理治具は、石英の硬度が高いた
め、ウェノ1を出入れする際にウェハのエッヂ部分が欠
は易い。その結果、この欠けだ微粒子がウェノへに付着
して汚染を起こすと共に、ウェハの欠けによって製造歩
留シが低下する問題があった。
In order to solve this problem, a substrate processing jig made of quartz, which has high cleaning efficiency and high strength, is used. However, since the quartz in this substrate processing jig has high hardness, the edge portion of the wafer is easily chipped when the wafer 1 is taken in and out. As a result, these chipped particles adhere to the wafer and cause contamination, and the manufacturing yield is reduced due to chipping of the wafer.

〔発明の目的〕[Purpose of the invention]

本発明は、洗浄効果が高く、しかもウェハの欠けを防止
してウェハの汚染をなくすと共に製造歩留シの向上を達
成した基板処理治具を提供することをその目的とするも
のである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing jig that has a high cleaning effect, prevents chipping of wafers, eliminates wafer contamination, and improves manufacturing yield.

〔発明の概要〕[Summary of the invention]

本発明は、ウェハを保持するだめのウェノ)支詩情及び
ウェハ側部支持溝の表面領域にフッ素樹脂からなる保護
膜を形成すると共に、その材質として石英を採用したこ
とによシ、洗浄効果が高く、しかもウェハの欠けを防止
してウェノ・の汚染をなくすと共に、製造歩留シの向上
を達成した基板処理治具である。
The present invention provides a cleaning effect by forming a protective film made of fluororesin on the surface area of the wafer support groove and the wafer side support groove, and using quartz as the material. This is a substrate processing jig that is expensive, prevents wafer chipping, eliminates wafer contamination, and improves manufacturing yield.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して説明する
Embodiments of the present invention will be described below with reference to the drawings.

第1図は、本発明の一実施例の正面図、第2図は、同実
施例の要部拡大図である。この基板処理治具は、略方形
の枠体からなる基台1部分と、この基台1上に立設され
た2枚の側壁2とを有している。基台1及び側壁2は、
共に石英で形成されている。基台1を構成する枠体の対
向する2辺部3には、所定間隔でウェハ支持溝4が形成
されている。ウェハ支持溝4の表面領域には、第2図に
示す如く、フッ素樹脂からなる保護@5が形成されてい
る。側壁2は、このウェハ支持溝4を形成した2辺部3
上に夫々立設されている。側壁2には、ウェハ6の側縁
部を保持するためのウェハ側部支持溝7がウニ・・支持
溝4の上方にこれと対応してスリット状に開口されてい
る。ウェハ側部支持溝7の表面領域には、フッ素樹脂か
らなる保護膜5が形成されている。つまり、ウニ・・6
を保持するためにウェハ6と接触する領域であるウェハ
支持溝4及びウェハ側部支持溝7の表面領域は、全てフ
ッ素樹脂からなる保護膜5で覆われている。このため、
この基板処理治具L1によれば、ウェハ6の出入操作の
際に、ウェハ6の周縁部に欠けが発生するのを、保護膜
50弾性によって防止することができる。しかも、石英
を素材に採用しているので、強度が陥く、構造を簡単な
ものにすることができる。このため、洗浄効果を高める
ことができる。その結果、ウェハ6の汚染を防止すると
共に1欠けの発生を阻止して製造歩留)を高めることが
できるものである。
FIG. 1 is a front view of an embodiment of the present invention, and FIG. 2 is an enlarged view of essential parts of the embodiment. This substrate processing jig has a base 1 portion made of a substantially rectangular frame, and two side walls 2 erected on the base 1. The base 1 and side wall 2 are
Both are made of quartz. Wafer support grooves 4 are formed at predetermined intervals on two opposing sides 3 of the frame that constitutes the base 1 . As shown in FIG. 2, a protection layer 5 made of fluororesin is formed in the surface area of the wafer support groove 4. As shown in FIG. The side wall 2 has two side portions 3 in which the wafer support groove 4 is formed.
They are placed on top of each other. In the side wall 2, a wafer side support groove 7 for holding the side edge of the wafer 6 is opened above the sea urchin support groove 4 in the form of a slit corresponding thereto. A protective film 5 made of fluororesin is formed on the surface area of the wafer side support groove 7 . In other words, sea urchin...6
The surface areas of the wafer support groove 4 and the wafer side support groove 7, which are areas that come into contact with the wafer 6 to hold the wafer 6, are all covered with a protective film 5 made of fluororesin. For this reason,
According to this substrate processing jig L1, the elasticity of the protective film 50 can prevent the occurrence of chipping at the peripheral edge of the wafer 6 when the wafer 6 is moved in and out. Moreover, since quartz is used as the material, the structure can be simplified without sacrificing strength. Therefore, the cleaning effect can be enhanced. As a result, it is possible to prevent contamination of the wafer 6 and also to prevent the occurrence of chipping, thereby increasing the manufacturing yield.

因みに、実施例の基板処理治具10に出入れしたウェハ
6の表面における微粒子9の付着度合を、レーザ一式微
粒子計数装置で調べたところ、第3図囚に示す如く、0
.5μ以上の微粒子9は、45個計数された。これと比
較するために従来の基板処理治具に出入したウエノ11
について、同様の実験を行ったところ、同図(B)に示
す如く、0,5μ以上の微粒子9は、約2倍の91個付
着していることが判った。
Incidentally, when the degree of adhesion of particles 9 on the surface of the wafer 6 taken in and out of the substrate processing jig 10 of the embodiment was examined using a laser set particle counting device, as shown in FIG. 3, it was found to be 0.
.. 45 fine particles 9 with a size of 5μ or more were counted. For comparison, Ueno 11 was put in and out of a conventional substrate processing jig.
When a similar experiment was conducted on the same, it was found that 91 fine particles 9 with a size of 0.5 μm or more were attached, which is about twice as many, as shown in FIG.

また、基板処理治具Lヱに洗浄処理を施した後に上述と
同様の実験を行ったところ、実施例のものでは第4図(
4)に示す如く、はとんど微粒子9の付着は見られなか
ったが、従来の基板処理治具を用いたものでは約7倍の
数の微粒子9が付着していることが判った・ 更に、実施例の基板処理治具1Oでは、ウェハ6のエッ
ヂ欠けの発生率はほとんど零であったが、従来の基板処
理治具では、5〜10係のエッヂ欠は発生率であること
が判った。
In addition, when we conducted an experiment similar to the above after cleaning the substrate processing jig L2, we found that the substrate processing jig L2 shown in Fig. 4 (
As shown in 4), hardly any particles 9 were observed to adhere to the substrate, but it was found that approximately seven times as many particles 9 were attached to the substrate using the conventional substrate processing jig. Furthermore, in the substrate processing jig 1O of the embodiment, the occurrence rate of edge defects on the wafer 6 was almost zero, but in the conventional substrate processing jig, the occurrence rate of edge defects of 5 to 10 times was low. understood.

尚、なお、保護膜5は、ウェハ支持溝4及びウェハ側部
支持溝7の表面領域のほかKも、基At XI、 YC
布11賂9の黒面頗偕全面1/r喜虚iイ家白い。
It should be noted that the protective film 5 has a surface area of the wafer support groove 4 and the wafer side support groove 7, as well as K, of the groups AtXI, YC.
Cloth 11 yen 9 black face chestnut all over 1/r Kikui Ii house white.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明に係る基板処理治具によれば
、洗浄効果が高く、シかもウェハの欠けを防止してウェ
ハの汚染をなくすと共に、′製造歩留りを向上させるこ
とができるものである。
As explained above, the substrate processing jig according to the present invention has a high cleaning effect, prevents wafer chipping, eliminates wafer contamination, and improves manufacturing yield. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例の正面図、第2図は、同実
施例の要部拡大図、第3図(A)及び同図(B)は、ウ
ェハの欠けによる微粒子の発生状態を示す説明図、第4
図(4)及び同図(B)は、洗浄後にウニ・・に残存し
た微粒子の状態を示す説明図である。 l・・・基台、2・・・側壁、3・・・2辺部、4・・
・ウェハ支持溝、5・・・保護膜、6・・・ウェハ、7
・・・ウニ・・側部支持溝、9・・・微粒子、10・・
・基板処理治具、1ノ・・・ウェハ。 出麗人代理人 弁理士 鈴 江 武 彦第1図 第2図 第3図 (B) (A) 第4図 (B) (A)
Figure 1 is a front view of one embodiment of the present invention, Figure 2 is an enlarged view of the main parts of the same embodiment, and Figures 3 (A) and 3 (B) show generation of fine particles due to chipping of the wafer. Explanatory diagram showing the state, No. 4
Figures (4) and (B) are explanatory diagrams showing the state of fine particles remaining on the sea urchin after washing. l...Base, 2...Side wall, 3...2 sides, 4...
・Wafer support groove, 5...protective film, 6...wafer, 7
...Sea urchin...Side support groove, 9...Fine particles, 10...
・Substrate processing jig, No.1...wafer. Takehiko Suzue, agent for patent attorneys, figure 1, figure 2, figure 3 (B) (A) figure 4 (B) (A)

Claims (1)

【特許請求の範囲】[Claims] 略方形の枠体の対向する二辺部分に所定間隔でウェハ支
持溝をした石英からなる基台と、前記二辺部分に立設さ
れた側壁と、該側壁に前記ウェハ支持溝に対応してスリ
ット状に開口されたウェハ側部支持溝と、該ウェハ側部
支持溝及び前記ウェハ支持溝の表面領域を覆うように形
成されたフッ素樹脂からなる保護膜とを具備することを
特徴とする基板処理治具。
A base made of quartz with wafer support grooves formed at predetermined intervals on two opposing sides of a substantially rectangular frame, side walls erected on the two sides, and grooves formed in the side walls corresponding to the wafer support grooves. A substrate comprising: a wafer side support groove opened in the form of a slit; and a protective film made of a fluororesin formed to cover the wafer side support groove and a surface area of the wafer support groove. Processing jig.
JP23711383A 1983-12-15 1983-12-15 Wafer processing jig Pending JPS60128623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23711383A JPS60128623A (en) 1983-12-15 1983-12-15 Wafer processing jig

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23711383A JPS60128623A (en) 1983-12-15 1983-12-15 Wafer processing jig

Publications (1)

Publication Number Publication Date
JPS60128623A true JPS60128623A (en) 1985-07-09

Family

ID=17010602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23711383A Pending JPS60128623A (en) 1983-12-15 1983-12-15 Wafer processing jig

Country Status (1)

Country Link
JP (1) JPS60128623A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265739A (en) * 1986-05-13 1987-11-18 Tokyo Electron Ltd Vertical conveying apparatus for wafer
EP1213269A1 (en) * 2000-12-05 2002-06-12 Heraeus Quarzglas GmbH & Co. KG Fluororesin-coated quartz glass jig and method for producing the same
EP1371617A1 (en) * 2002-05-28 2003-12-17 Heraeus Quarzglas GmbH & Co. KG Method for producing a quartz glass tank for use in ultrasonic cleaning used for fabricating semiconductor and quartz glass tank obtainable from that method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265739A (en) * 1986-05-13 1987-11-18 Tokyo Electron Ltd Vertical conveying apparatus for wafer
EP1213269A1 (en) * 2000-12-05 2002-06-12 Heraeus Quarzglas GmbH & Co. KG Fluororesin-coated quartz glass jig and method for producing the same
EP1371617A1 (en) * 2002-05-28 2003-12-17 Heraeus Quarzglas GmbH & Co. KG Method for producing a quartz glass tank for use in ultrasonic cleaning used for fabricating semiconductor and quartz glass tank obtainable from that method

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