JPH03109732A - Cleaning method for semiconductor device - Google Patents
Cleaning method for semiconductor deviceInfo
- Publication number
- JPH03109732A JPH03109732A JP24761689A JP24761689A JPH03109732A JP H03109732 A JPH03109732 A JP H03109732A JP 24761689 A JP24761689 A JP 24761689A JP 24761689 A JP24761689 A JP 24761689A JP H03109732 A JPH03109732 A JP H03109732A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- ammonia
- silicon dioxide
- fine particles
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004140 cleaning Methods 0.000 title claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 11
- 238000011109 contamination Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011874 heated mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 11
- 239000000377 silicon dioxide Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 8
- 239000010419 fine particle Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000005416 organic matter Substances 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の洗浄方法に関し、特に半導体装置
の有機物除去や微粒子除去の際に半導体装置の表面に成
長した二酸化珪素薄膜や、半導体基板表面のエツチング
を極力抑制したい場合に有効である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for cleaning semiconductor devices, and in particular, to remove silicon dioxide thin films grown on the surface of semiconductor devices and semiconductor substrates during the removal of organic substances and particulates from semiconductor devices. This is effective when it is desired to suppress surface etching as much as possible.
（従来の技術〕
第２図（ａｌ、 （ｂｌは従来の半導体装置の洗浄方法
を用いた場合の工程順縦断面図である。第２図（ａｌは
半導体基板１に二酸化珪素膜２を成長させた半導体装置
の表面に微粒子３が付着している。その半導体装置をア
ンモニアと過酸化水素水と水を１対１対５で混合し、７
０℃〜８０℃に加熱した液に浸漬して洗浄していた。第
２図（ｂ）は洗浄後の半導体装置の縦断面図である。(Prior art) Figure 2 (al, (bl) is a vertical cross-sectional view in the order of steps when a conventional semiconductor device cleaning method is used. Figure 2 (al) is a silicon dioxide film 2 grown on a semiconductor substrate 1. Fine particles 3 are attached to the surface of a semiconductor device that has been exposed to water.
It was washed by immersing it in a liquid heated to 0°C to 80°C. FIG. 2(b) is a longitudinal sectional view of the semiconductor device after cleaning.
しかし従来の方法では、アンモニアによる半導体基板１
や二酸化珪素膜２のエツチング作用によって半導体基板
１の表面に凹凸ができたり、二酸化珪素膜２の膜厚が減
少したりする。このことは、半導体装置の接合耐圧を劣
化させたり、二酸化珪素膜２の耐圧を劣化させたりする
原因となる。そこで本発明は、従来の方法におけるこの
ような欠点を解決するために、アンモニアと過酸化水素
水と水の混合液による半導体装置の洗浄において、半導
体装置表面のエツチングを極力抑制することを目的にし
ている。However, in the conventional method, the semiconductor substrate 1 is
Also, due to the etching action of the silicon dioxide film 2, irregularities are formed on the surface of the semiconductor substrate 1, and the film thickness of the silicon dioxide film 2 is reduced. This causes deterioration of the junction breakdown voltage of the semiconductor device and deterioration of the breakdown voltage of the silicon dioxide film 2. Therefore, the present invention aims to suppress etching of the surface of a semiconductor device as much as possible when cleaning the semiconductor device with a mixed solution of ammonia, hydrogen peroxide, and water, in order to solve these drawbacks of the conventional method. ing.
上記の課題を解決するために本発明は、アンモニアと過
酸化水素水と水の混合液を加熱して半導体装置の洗浄を
する工程において、アンモニアと過酸化水素水の混合比
率を１対２以下としアンモニア濃度を下げることで、半
導体装置表面のエツチングを抑制する様にした。In order to solve the above-mentioned problems, the present invention aims to reduce the mixing ratio of ammonia and hydrogen peroxide to 1:2 or less in the process of cleaning semiconductor devices by heating a mixture of ammonia, hydrogen peroxide and water. By lowering the ammonia concentration, etching on the surface of the semiconductor device was suppressed.
上記の様なアンモニア濃度の低い洗浄液を用いると、半
導体装置の表面のエツチングを極力抑制しながら有機物
汚染や微粒子を除去することができるのである。By using a cleaning solution with a low ammonia concentration as described above, it is possible to remove organic contamination and fine particles while suppressing etching of the surface of a semiconductor device as much as possible.
以下に本発明の実施例を図面に基づいて説明する。第１
図（ａ）、 （ｂ）は半導体装置に本発明の洗浄を施す
前後の工程順縦断面図である。第１図（ａｌは半導体基
板１に熱酸化法により二酸化珪素Ｍ２を成長させである
半導体装置の表面に微粒子３が付着している場合の半導
体装置の縦断面図である。第１回申）は本発明による洗
浄工程を施した後の半導体装置の縦断面図である。Embodiments of the present invention will be described below based on the drawings. 1st
Figures (a) and (b) are vertical cross-sectional views in the order of steps before and after the cleaning of the present invention is applied to a semiconductor device. FIG. 1 (Al is a vertical cross-sectional view of a semiconductor device in which fine particles 3 are attached to the surface of the semiconductor device, which is obtained by growing silicon dioxide M2 on a semiconductor substrate 1 by a thermal oxidation method. 1st session) 1 is a longitudinal cross-sectional view of a semiconductor device after being subjected to a cleaning process according to the present invention.
（発明の効果〕
本発明は以上説明した様に、半導体装置表面に露出した
半導体基板や、半導体装置表面の二酸化珪素膜をエツチ
ングすることなく、有機物汚染や微粒子を除去できるた
め、半導体装置の接合耐圧や、二酸化珪素膜耐圧を劣化
させることなく半導体装置を洗浄することができるので
ある。(Effects of the Invention) As explained above, the present invention can remove organic contamination and particulates without etching the semiconductor substrate exposed on the surface of the semiconductor device or the silicon dioxide film on the surface of the semiconductor device. The semiconductor device can be cleaned without degrading the breakdown voltage or the silicon dioxide film breakdown voltage.
第１図（５）、（ｂ）は本発明に係わる半導体装置の洗
浄方法を用いた工程順縦断面図である。第２図（ａ）。
（ｂ）は従来の半導体装置の洗浄方法を用いた工程順縦
断面図である。
１・・・半導体基板
２・・・二酸化珪素膜
３・・・微粒子
以上FIGS. 1(5) and 1(b) are vertical cross-sectional views in the order of steps using the semiconductor device cleaning method according to the present invention. Figure 2(a). (b) is a vertical cross-sectional view in the order of steps using a conventional semiconductor device cleaning method. 1...Semiconductor substrate 2...Silicon dioxide film 3...Fine particles or more
Claims (1)
化水素水と水の混合液を加熱した液に半導体装置を浸漬
して有機物汚染や微粒子を除去する場合に、アンモニア
と過酸化水素水の混合比率を１対２以下にしアンモニア
濃度を下げることを特徴とする半導体装置の洗浄方法。In the process of manufacturing semiconductor devices, when semiconductor devices are immersed in a heated mixture of ammonia, hydrogen peroxide, and water to remove organic contamination and particulates, the mixing ratio of ammonia and hydrogen peroxide must be adjusted. A method for cleaning a semiconductor device, characterized by reducing the ammonia concentration to 1:2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24761689A JPH03109732A (en) | 1989-09-22 | 1989-09-22 | Cleaning method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24761689A JPH03109732A (en) | 1989-09-22 | 1989-09-22 | Cleaning method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03109732A true JPH03109732A (en) | 1991-05-09 |
Family
ID=17166160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24761689A Pending JPH03109732A (en) | 1989-09-22 | 1989-09-22 | Cleaning method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03109732A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0468213A2 (en) * | 1990-06-25 | 1992-01-29 | Kabushiki Kaisha Toshiba | Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate |
| US6277749B1 (en) * | 1998-09-10 | 2001-08-21 | Hiatchi, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
-
1989
- 1989-09-22 JP JP24761689A patent/JPH03109732A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0468213A2 (en) * | 1990-06-25 | 1992-01-29 | Kabushiki Kaisha Toshiba | Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate |
| US5508800A (en) * | 1990-06-25 | 1996-04-16 | Kabushiki Kaisha Toshiba | Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate |
| US6277749B1 (en) * | 1998-09-10 | 2001-08-21 | Hiatchi, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
| US6774047B2 (en) | 1998-09-10 | 2004-08-10 | Renesas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device |
| US6794305B2 (en) | 1998-09-10 | 2004-09-21 | Renesas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device |
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