KR940008005A

KR940008005A - Semiconductor Wafer Cleaning Method

Info

Publication number: KR940008005A
Application number: KR1019920015892A
Authority: KR
Inventors: 최호영; 이원건; 박종근; 나민권
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1992-09-02
Filing date: 1992-09-02
Publication date: 1994-04-28

Abstract

반도체 제조공정중, 특히 폴리실리콘에 POC1₃도핑시 폴리실리콘층위에 부수적으로 성장되는 P₂0₅및 SiO₂를 제거하기 위해 실시하는 반도체 웨이퍼 크리닝 공정중에서,기존의 HF 용액에 담그는 (습식)공정시에 웨이퍼 표면의 폴리 실리콘층이 소수성 상태로 되어 많은 파티클이 흡착되는 것을 막기 위해 HF 증기(fume)로 최종처리를 하고, 종래의 암모니아수 세정공정 대신 황산(Piranha) 세정공정으로 대체하여 폴리실리콘 표면의 러프니스(roughness)를 양호하게 함으로써, 반도체 디바이스의 품질향상을 기대할 수 있다.During the semiconductor manufacturing process, especially during the semiconductor wafer cleaning process to remove P ₂ 0 ₅ and SiO ₂ incidentally grown on the polysilicon layer when POC1 _{3 is} doped into the polysilicon, it is immersed in the existing HF solution (wet) process. In order to prevent the polysilicon layer on the wafer surface from becoming hydrophobic and adsorbing a lot of particles, it is finally treated with HF fume and replaced with a sulfuric acid cleaning process instead of a conventional ammonia water cleaning process. By improving the roughness of the semiconductor device, an improvement in the quality of the semiconductor device can be expected.

Description

Semiconductor Wafer Cleaning Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims

In the semiconductor wafer cleaning method for removing by-products such as P ₂ O ₅ , SiO ₂ and the like that are incidentally formed on the polysilicon layer during the semiconductor manufacturing process, the semiconductor wafer is immersed in an IF solution for about 80 seconds to deposit the by-products on the silicon layer. The first step of removing the first step, the second step of washing with pure water (DI water), the four steps of washing again with pure water and drying, and the particles adsorbed during the wet process of the first and second steps 3. A semiconductor wafer cleaning method comprising a three step process of Piranha (sulfuric acid) cleaning to remove and a five step process of finally treating the wafer surface with HF fume and sprayed DI water cleaning in a continuous process.

The method of claim 1, wherein the ratio of sulfuric acid (H ₂ SO ₄ ) to hydrogen peroxide (H ₂ O ₂ ) used in the Piranha cleaning process of the third step is about 1.7: 1.

※ Note: The disclosure is based on the initial application.