JPH0831837A - Deposition method of polysilicon for eg - Google Patents
Deposition method of polysilicon for egInfo
- Publication number
- JPH0831837A JPH0831837A JP18404494A JP18404494A JPH0831837A JP H0831837 A JPH0831837 A JP H0831837A JP 18404494 A JP18404494 A JP 18404494A JP 18404494 A JP18404494 A JP 18404494A JP H0831837 A JPH0831837 A JP H0831837A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon film
- depositing
- polysilicon
- ozone
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＥＧ（Ｅｘｔｒｉｎｓ
ｉｃ Ｇｅｔｔｅｒｉｎｇ）用のポリシリコン膜の被着
方法、詳しくはポリバックシール法におけるＥＧ層とし
てシリコンウェーハ裏面に被着されるポリシリコン膜堆
積の前処理方法に関する。The present invention relates to an EG (Extrins)
The present invention relates to a method for depositing a polysilicon film for ic gettering), more specifically, a pretreatment method for depositing a polysilicon film to be deposited on the back surface of a silicon wafer as an EG layer in the polyback sealing method.
【０００２】[0002]
【従来の技術】デバイス製造工程中に、金属不純物等の
汚染が生じると、デバイス特性の劣化や歩留まりの低下
を引き起こす。工程中で不純物をシリコンウェーハ表面
の活性領域から取り除くためのゲッタリング技術の一つ
として、ＥＧ法が知られている。このＥＧ法にあって
も、バックサイドダメージ法、リンゲッタ法等ともに、
ポリバックシール法が知られている。ポリバックシール
法は、エッチング処理後のシリコンウェーハの裏面にポ
リシリコン膜を被着、形成し、このポリシリコン膜によ
り汚染不純物、点欠陥等を捕獲する方法である。2. Description of the Related Art When metal impurities or the like are contaminated during a device manufacturing process, the device characteristics are deteriorated and the yield is lowered. The EG method is known as one of the gettering techniques for removing impurities from the active region of the silicon wafer surface during the process. Even in this EG method, both the backside damage method, the ring getter method, etc.
The poly back seal method is known. The poly back seal method is a method in which a polysilicon film is deposited and formed on the back surface of a silicon wafer after etching, and contaminants, point defects and the like are captured by the polysilicon film.
【０００３】これまでのシリコンウェーハ裏面へのポリ
シリコン膜の被着は、以下のように行われていた。ま
ず、混酸エッチングによりウェーハの加工ダメージを完
全に除去する。その後、ＳＣ−２（Ｓｔａｎｄａｒｄ
Ｃｌｅａｎｉｎｇ−２）洗浄や、界面活性剤を含んだ弱
アルカリ性のエッチング液による洗浄を施す。さらにこ
の後、シリコンウェーハの裏面にＣＶＤによりポリシリ
コン膜を堆積していた。The conventional deposition of a polysilicon film on the back surface of a silicon wafer has been performed as follows. First, the processing damage of the wafer is completely removed by mixed acid etching. After that, SC-2 (Standard)
Cleaning-2) Cleaning or cleaning with a weakly alkaline etching solution containing a surfactant is performed. After that, a polysilicon film was deposited on the back surface of the silicon wafer by CVD.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな従来技術にあっては、ポリシリコン膜堆積前のシリ
コンウェーハは、その表裏面に、界面活性剤や環境から
の有機物が付着していた。この結果、ポリシリコン膜の
堆積中に、その堆積膜にごみ等の異物が含まれて汚れ、
突起等の不良を引き起こしていた。However, in such a conventional technique, a silicon wafer before deposition of a polysilicon film had a surface active agent and organic substances from the environment attached to the front and back surfaces thereof. As a result, during the deposition of the polysilicon film, foreign matter such as dust is contained in the deposited film and becomes dirty,
It caused defects such as protrusions.
【０００５】また、ポリシリコン膜とウェーハ裏面との
界面の金属不純物レベルを改善するため、ポリシリコン
膜の堆積前にウェーハ裏面に塩酸処理またはフッ酸処理
を施すことも考えられる。しかし、この処理後、堆積し
たポリシリコン膜は、粒界の大きな多結晶となってしま
い、ゲッタリング能力自体が低下するという課題が生じ
ていた。Further, in order to improve the metal impurity level at the interface between the polysilicon film and the back surface of the wafer, it may be possible to perform hydrochloric acid treatment or hydrofluoric acid treatment on the back surface of the wafer before depositing the polysilicon film. However, after this treatment, the deposited polysilicon film becomes a polycrystal having a large grain boundary, which causes a problem that the gettering ability itself is lowered.
【０００６】そこで、本発明者らは、上記課題を解決す
べく検討を重ねた結果、上記ポリシリコン膜堆積前の酸
化還元処理（ＳＣ−１洗浄または無機アルカリ／Ｈ2Ｏ2
洗浄）の後、ウェーハにフッ酸処理を施し、さらに、こ
のウェーハ裏面に清浄な酸化膜を形成するようにした。
この結果、金属不純物レベルが低く、かつ、粒界の小さ
なポリシリコン膜を収率良く形成することができること
を知見した。また、この清浄な酸化膜の形成には、オゾ
ン溶液またはオゾンガスを使用することが、有効であ
る。さらに、オゾン溶液の液中濃度を、０．５ｐｐｍ以
上とすると、数オングストロームの厚さの清浄な酸化膜
を形成することができることを知見した（図３参照）。
清浄な酸化膜を形成することができる理由は、上記前処
理洗浄においてウェーハ表面に付着した残留有機成分
や、環境から付着した比較的分子量の小さな有機物が、
オゾンの有機物分解特性により、分解除去されるからで
あると、推定される。Therefore, as a result of repeated studies to solve the above-mentioned problems, the present inventors have conducted a redox treatment (SC-1 cleaning or inorganic alkali / H 2 O 2) before deposition of the polysilicon film.
After cleaning, the wafer was subjected to hydrofluoric acid treatment to form a clean oxide film on the back surface of the wafer.
As a result, it was found that a polysilicon film having a low metal impurity level and a small grain boundary can be formed with a high yield. Further, it is effective to use an ozone solution or ozone gas for forming this clean oxide film. Furthermore, it was found that a clean oxide film having a thickness of several angstroms can be formed when the concentration of the ozone solution in the liquid is 0.5 ppm or more (see FIG. 3).
The reason why a clean oxide film can be formed is that the residual organic components attached to the wafer surface in the above-mentioned pretreatment cleaning and the organic substances having a relatively small molecular weight attached from the environment,
It is presumed that this is because ozone is decomposed and removed due to the organic matter decomposition characteristics of ozone.
【０００７】よって、ポリシリコン膜堆積前のウェーハ
裏面は、有機物、金属不純物のきわめて少ない清浄面を
保持することができ、同時に数オングストローム程度の
酸化膜を形成した結果、上記ウェーハ裏面の清浄さを保
持したままポリシリコン膜を被着することができる。Therefore, the back surface of the wafer before the deposition of the polysilicon film can hold a clean surface with a very small amount of organic substances and metal impurities, and at the same time, an oxide film of several angstroms is formed. The polysilicon film can be deposited while holding it.
【０００８】そこで、本発明は、有機物等の汚染による
汚れ、突起等がなく、金属不純物レベルが向上し、か
つ、粒界が小さくてゲッタリング能力が低下することも
ない、ＥＧ用ポリシリコン膜を形成することができるポ
リシリコン膜の被着方法を提供することを、その目的と
している。Therefore, according to the present invention, there is no stain or protrusion due to contamination by organic substances, the metal impurity level is improved, and the grain boundary is small so that the gettering ability is not deteriorated. It is an object of the present invention to provide a method for depositing a polysilicon film capable of forming a film.
【０００９】[0009]
【課題を解決するための手段】請求項１に記載した発明
は、シリコンウェーハに表面酸化還元処理を施した後、
フッ酸処理を施し、この後酸化処理を施し、さらにこの
シリコンウェーハの裏面にポリシリコン膜を被着するＥ
Ｇ用ポリシリコン膜の被着方法である。ここで、表面酸
化還元処理とは、酸化剤と還元剤との両方を持ち合わせ
た混合溶液による処理をいう。例えばＳＣ−１洗浄、フ
ッ酸／硝酸洗浄等を意味している。また、上記酸化処理
とは、酸化膜を形成することを意味する。シリコンウェ
ーハ表面が親水化することが必要であり、例えば３オン
グストローム程度の厚さの酸化膜を形成するものとす
る。According to the invention described in claim 1, after subjecting a silicon wafer to a surface redox treatment,
Hydrofluoric acid treatment is applied, followed by oxidation treatment, and then a polysilicon film is deposited on the back surface of this silicon wafer E
This is a method of depositing a polysilicon film for G. Here, the surface oxidation-reduction treatment means treatment with a mixed solution having both an oxidizing agent and a reducing agent. For example, SC-1 cleaning, hydrofluoric acid / nitric acid cleaning, etc. are meant. Further, the oxidation treatment means forming an oxide film. It is necessary to make the surface of the silicon wafer hydrophilic, and for example, an oxide film having a thickness of about 3 angstroms is formed.
【００１０】請求項２に記載した発明は、オゾン溶液ま
たはオゾンガスを使用して酸化処理を施す請求項１に記
載のＥＧ用ポリシリコン膜の被着方法である。The invention described in claim 2 is the method for depositing a polysilicon film for EG according to claim 1, wherein the oxidation treatment is performed using an ozone solution or ozone gas.
【００１１】請求項３に記載の発明は、オゾン水溶液濃
度は０．５ｐｐｍ以上で処理する請求項２に記載のＥＧ
用ポリシリコン膜の被着方法である。According to a third aspect of the present invention, the EG solution is treated at an ozone aqueous solution concentration of 0.5 ppm or more.
This is a method of depositing a polysilicon film for use.
【００１２】請求項４に記載した発明は、上記ポリシリ
コン膜の被着はＣＶＤ法による請求項１〜３のいずれか
に記載のＥＧ用ポリシリコン膜の被着方法である。ポリ
シリコン膜の被着方法の具体例としては、減圧ＣＶＤ法
による。酸化膜厚とオゾン濃度との関係から酸化作用が
安定するためである。The invention described in claim 4 is the method for depositing a polysilicon film for EG according to any one of claims 1 to 3, wherein the deposition of the polysilicon film is a CVD method. A specific example of the method of depositing the polysilicon film is a low pressure CVD method. This is because the oxidizing action is stable due to the relationship between the oxide film thickness and the ozone concentration.
【００１３】[0013]
【作用】請求項１に記載した発明では、シリコンウェー
ハの裏面を例えばＳＣ−１液で洗浄した後、裏面をフッ
酸処理し、さらに、この裏面に酸化膜を形成する。ＳＣ
−１洗浄により表面に付着した有機物、カーボン等を除
去する。そして、フッ酸洗浄により裏面を清浄化する。
すなわち、フッ酸は、酸化還元処理により生成されたシ
リコン酸化物と反応し、この酸化物とともに不純物を除
去する。また、酸化膜の形成により、清浄化した裏面を
その状態に保持する。そして、この酸化膜上にポリシリ
コン膜を被着する。ウェーハ裏面とポリシリコン膜との
界面を清浄に保持しているため、ポリシリコン膜が汚染
されない。According to the first aspect of the present invention, the back surface of the silicon wafer is washed with, for example, SC-1 solution, and then the back surface is treated with hydrofluoric acid, and an oxide film is formed on the back surface. SC
-1 Washing removes organic substances, carbon, etc. adhering to the surface. Then, the back surface is cleaned by cleaning with hydrofluoric acid.
That is, hydrofluoric acid reacts with the silicon oxide produced by the redox treatment, and removes impurities along with this oxide. Further, the oxide film is formed to hold the cleaned back surface in that state. Then, a polysilicon film is deposited on this oxide film. Since the interface between the back surface of the wafer and the polysilicon film is kept clean, the polysilicon film is not contaminated.
【００１４】請求項２に記載の発明は、オゾン溶液また
はオゾンガスを使用して酸化膜を形成する。このため、
清浄な酸化膜を形成することができる。過酸化水素中に
おける酸化処理、または、気層中での酸化処理に比較し
て、オゾン処理は、適切な酸化力により、最も不純物の
少ない清浄な酸化を行うことができる。オゾン溶液は溶
媒である超純水にオゾンを溶かしこんでいるからであ
る。According to a second aspect of the present invention, an oxide film is formed using an ozone solution or ozone gas. For this reason,
A clean oxide film can be formed. Compared to the oxidation treatment in hydrogen peroxide or the oxidation treatment in the gas phase, the ozone treatment can perform clean oxidation with the least impurities by an appropriate oxidizing power. This is because the ozone solution dissolves ozone in ultrapure water which is a solvent.
【００１５】請求項３に記載した発明では、オゾン溶液
またはオゾンガスの濃度は０．５ｐｐｍ以上としてい
る。このため、清浄さの維持に好適な厚さの酸化膜（３
オングストローム程度の酸化膜）を容易に形成すること
ができる。According to the third aspect of the invention, the concentration of the ozone solution or ozone gas is 0.5 ppm or more. Therefore, the oxide film (3
An oxide film of about angstrom) can be easily formed.
【００１６】請求項４に記載した発明によれば、ポリシ
リコン膜の被着は減圧ＣＶＤによる。ＣＶＤにより、清
浄な環境を維持しつつ、ポリシリコン膜を被着する。According to the fourth aspect of the present invention, the deposition of the polysilicon film is performed by low pressure CVD. By CVD, a polysilicon film is deposited while maintaining a clean environment.
【００１７】[0017]
【実施例】以下、図面を参照して本発明方法の実施例に
ついて説明する。図１に示すように、ＣＺ、Ｐ型、（１
００）、６インチウェーハについて、前洗浄としてＳＣ
−１洗浄を行う。ＳＣ−１洗浄は、８５℃のＮＨ4ＯＨ
／Ｈ2Ｏ2／Ｈ2Ｏ＝１：１：５の混合溶液中に１０分間
浸漬して行う。次いで、室温での超純水（ＤＩＷ）リン
ス後、室温で体積濃度５％のフッ酸（ＨＦ）洗浄を施
す。さらに、室温での超純水リンス後、室温でのオゾン
溶液（０．５ｐｐｍ）による洗浄、超純水リンスを施
し、裏面に清浄な酸化膜を形成する。なお、オゾン溶液
は、通常の超純水にオゾンガスを溶かし込んだもので、
室温で保持している。そして、この後、減圧ＣＶＤ法に
よりポリシリコン膜を被着する。減圧ＣＶＤ法の条件
は、例えば東京ハイテック（株）の縦型ＬＰ−ＣＶＤシ
ステムを使用し、堆積ガスはモノシラン、堆積温度は６
４０〜６６０℃、成長レートは１５０オングストローム
／分、堆積する膜厚は１．５μｍとする。Embodiments of the method of the present invention will be described below with reference to the drawings. As shown in FIG. 1, CZ, P type, (1
00), 6 inch wafer SC as pre-cleaning
-1 Wash. SC-1 cleaning is NH 4 OH at 85 ° C
/ H 2 O 2 / H 2 O = 1: 1: 5 in a mixed solution for 10 minutes. Then, after rinsing with ultrapure water (DIW) at room temperature, cleaning with hydrofluoric acid (HF) having a volume concentration of 5% is performed at room temperature. Further, after rinsing with ultrapure water at room temperature, cleaning with an ozone solution (0.5 ppm) at room temperature and rinsing with ultrapure water are performed to form a clean oxide film on the back surface. The ozone solution is a solution of ozone gas dissolved in ordinary ultrapure water.
Hold at room temperature. Then, after this, a polysilicon film is deposited by the low pressure CVD method. The conditions of the low pressure CVD method are, for example, using a vertical LP-CVD system manufactured by Tokyo Hitec Co., Ltd., the deposition gas is monosilane, and the deposition temperature is 6
The temperature is 40 to 660 ° C., the growth rate is 150 Å / min, and the deposited film thickness is 1.5 μm.
【００１８】図２は、オゾン溶液の濃度と酸化膜の厚さ
との関係を示すグラフである。ＨＦ処理品では酸化膜が
ほとんど除去されるのに対し、上記したようにオゾン濃
度を０．５ｐｐｍ以上に高めた処理（室温、４分間浸
漬）では、その酸化膜の膜厚は５オングストローム以上
となる。膜厚はＥＳＣＡ、エリプソメータで測定した。
このエリプソメータでの測定値は酸化膜（ＳｉＯ2）表
面の有機物を含んでいる。このグラフからオゾン溶液の
濃度が０．５ｐｐｍ以上では清浄な酸化膜が形成される
ことがわかる。FIG. 2 is a graph showing the relationship between the concentration of the ozone solution and the thickness of the oxide film. Most of the oxide film is removed in the HF-treated product, whereas the film thickness of the oxide film is 5 angstroms or more in the process in which the ozone concentration is increased to 0.5 ppm or more (immersion at room temperature for 4 minutes) as described above. Become. The film thickness was measured by ESCA and ellipsometer.
The value measured by this ellipsometer contains organic substances on the surface of the oxide film (SiO 2 ). This graph shows that a clean oxide film is formed when the concentration of the ozone solution is 0.5 ppm or more.
【００１９】表１は従来方法と本発明方法との比較を示
す。これはポリシリコン膜中の不純物濃度を示すもので
ある。表面分析は、フレームレス原子吸光法によった。
表１に示すように、不純物レベルは１桁改善された。従
来方法は、ＳＣ−１洗浄、純水リンス、ＳＣ−２洗浄、
純水リンス後にポリシリコン膜を被着したものである。
これに対して本発明方法ではＳＣ−１洗浄、ＨＦ洗浄、
オゾン溶液ディップ、ＣＶＤによるポリシリコン膜を被
着している。Table 1 shows a comparison between the conventional method and the method of the present invention. This shows the impurity concentration in the polysilicon film. Surface analysis was by flameless atomic absorption spectrometry.
As shown in Table 1, the impurity level was improved by an order of magnitude. Conventional methods include SC-1 cleaning, pure water rinse, SC-2 cleaning,
A polysilicon film is deposited after rinsing with pure water.
On the other hand, in the method of the present invention, SC-1 cleaning, HF cleaning,
An ozone solution dip and a polysilicon film by CVD are deposited.
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【発明の効果】本発明によれば、汚れ、突起等のないポ
リシリコン膜を形成することができる。また、このポリ
シリコン膜を被着する際の生産性が向上する。このポリ
シリコン膜はその不純物グレードが向上している。よっ
て、ゲッタリング能力を高めたポリシリコン膜を形成す
ることができる。According to the present invention, it is possible to form a polysilicon film free from stains and protrusions. In addition, productivity when depositing this polysilicon film is improved. The impurity grade of this polysilicon film is improved. Therefore, a polysilicon film having an improved gettering ability can be formed.
【図１】本発明の一実施例に係るＥＧ用ポリシリコン膜
の被着方法を示す工程図である。FIG. 1 is a process chart showing a method for depositing a polysilicon film for EG according to an embodiment of the present invention.
【図２】本発明の一実施例に係るオゾン濃度と酸化膜厚
さとの関係を示すグラフである。FIG. 2 is a graph showing the relationship between ozone concentration and oxide film thickness according to an example of the present invention.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高石 和成 東京都千代田区岩本町３丁目８番16号 三 菱マテリアルシリコン株式会社内 (72)発明者 遠藤 光弘 東京都千代田区岩本町３丁目８番16号 三 菱マテリアルシリコン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazunari Takaishi 3-8-16 Iwamotocho, Chiyoda-ku, Tokyo Sanritsu Material Silicon Co., Ltd. (72) Inventor Mitsuhiro Endo 3-chome, Iwamotocho, Chiyoda-ku, Tokyo No. 16 Sanritsu Material Silicon Co., Ltd.
Claims (4)
施した後、フッ酸処理を施し、この後酸化処理を施し、
さらに、このシリコンウェーハの裏面にポリシリコン膜
を被着するＥＧ用ポリシリコン膜の被着方法。1. A silicon wafer is subjected to surface redox treatment, then hydrofluoric acid treatment, and then post-oxidation treatment,
Further, a method for depositing a polysilicon film for EG, which comprises depositing a polysilicon film on the back surface of this silicon wafer.
上記酸化処理を施す請求項１に記載のＥＧ用ポリシリコ
ン膜の被着方法。2. The method for depositing a polysilicon film for EG according to claim 1, wherein the oxidation treatment is performed using an ozone solution or ozone gas.
理する請求項２に記載のＥＧ用ポリシリコン膜の被着方
法。3. The method for depositing a polysilicon film for EG according to claim 2, wherein the ozone concentration is 0.5 ppm or more.
よる請求項１〜３のいずれかに記載のＥＧ用ポリシリコ
ン膜の被着方法。4. The method of depositing a polysilicon film for EG according to claim 1, wherein the deposition of the polysilicon film is performed by a CVD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06184044A JP3076202B2 (en) | 1994-07-12 | 1994-07-12 | Method of depositing polysilicon film for EG |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06184044A JP3076202B2 (en) | 1994-07-12 | 1994-07-12 | Method of depositing polysilicon film for EG |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0831837A true JPH0831837A (en) | 1996-02-02 |
| JP3076202B2 JP3076202B2 (en) | 2000-08-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06184044A Expired - Fee Related JP3076202B2 (en) | 1994-07-12 | 1994-07-12 | Method of depositing polysilicon film for EG |
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| JP (1) | JP3076202B2 (en) |
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| EP1005072A1 (en) * | 1998-11-19 | 2000-05-31 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Method for wet-chemical treatment of semiconductor substrates |
| JP2002246394A (en) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| JP2002246395A (en) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| KR100442744B1 (en) * | 2000-07-27 | 2004-08-02 | 실트로닉 아게 | Process for the Chemical Treatment of Semiconductor Wafers |
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| JP2006294772A (en) * | 2005-04-08 | 2006-10-26 | Fuji Electric Holdings Co Ltd | Method of manufacturing semiconductor device |
| WO2011007494A1 (en) * | 2009-07-16 | 2011-01-20 | 信越半導体株式会社 | Method for manufacturing semiconductor epitaxial wafer, and semiconductor epitaxial wafer |
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| US7172975B2 (en) | 1998-11-19 | 2007-02-06 | Siltronic Ag | Process for the wet chemical treatment of semiconductor wafers |
| SG83159A1 (en) * | 1998-11-19 | 2001-09-18 | Wacker Siltronic Halbleitermat | Process for the wet chemical treatment of semiconductor wafers |
| KR100351229B1 (en) * | 1998-11-19 | 2002-09-09 | 와커 실트로닉 게젤샤프트 퓌르 할브라이테르마테리아리엔 아게 | Process for the wet chemical treatment of semiconductor wafers |
| EP1005072A1 (en) * | 1998-11-19 | 2000-05-31 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Method for wet-chemical treatment of semiconductor substrates |
| KR100442744B1 (en) * | 2000-07-27 | 2004-08-02 | 실트로닉 아게 | Process for the Chemical Treatment of Semiconductor Wafers |
| JP2002246394A (en) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| JP2002246395A (en) * | 2001-02-16 | 2002-08-30 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| US7008837B2 (en) | 2003-02-27 | 2006-03-07 | Samsung Electronics, Co., Ltd. | Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode |
| JP2006294772A (en) * | 2005-04-08 | 2006-10-26 | Fuji Electric Holdings Co Ltd | Method of manufacturing semiconductor device |
| WO2011007494A1 (en) * | 2009-07-16 | 2011-01-20 | 信越半導体株式会社 | Method for manufacturing semiconductor epitaxial wafer, and semiconductor epitaxial wafer |
| WO2012081161A1 (en) * | 2010-12-16 | 2012-06-21 | 信越半導体株式会社 | Semiconductor wafer cleaning method |
| JP2012129409A (en) * | 2010-12-16 | 2012-07-05 | Shin Etsu Handotai Co Ltd | Cleaning method of semiconductor wafer |
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| JP2012199550A (en) * | 2011-03-22 | 2012-10-18 | Soytec | Method of manufacturing base substrate for semiconductor type substrate on insulator |
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