KR970003582A - Semiconductor Wafer Cleaning Method - Google Patents

Semiconductor Wafer Cleaning Method Download PDF

Info

Publication number
KR970003582A
KR970003582A KR1019950018901A KR19950018901A KR970003582A KR 970003582 A KR970003582 A KR 970003582A KR 1019950018901 A KR1019950018901 A KR 1019950018901A KR 19950018901 A KR19950018901 A KR 19950018901A KR 970003582 A KR970003582 A KR 970003582A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
koh
cleaning
cleaning method
solution
Prior art date
Application number
KR1019950018901A
Other languages
Korean (ko)
Inventor
박미라
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950018901A priority Critical patent/KR970003582A/en
Publication of KR970003582A publication Critical patent/KR970003582A/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 웨이퍼 세정방법에 관한 것으로서, 백랩등의 완료된 제조 공정 전단계의 반도체 웨이퍼를 KOH 혼합용액에 담구어 표면에 흡착되어 있는 유기불순물 및 먼지등을 제거하고, 세척 및 건조시켰으므로, 반도체 웨이퍼 표면의 식각 균일도가 향상되어 거칠기가 작게 형성되므로 그 상측에 형성되는 소자의 동작 특성 및 신뢰도가 향상되고, KOH 용액의 휘발성이 낮으므로 용액의 소모가 작고, 관리가 용이하여 공정수율이 향상되고 제조 단가를 절감할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor wafer, wherein the semiconductor wafers in the previous stages of the manufacturing process, such as backlaps, are soaked in a KOH mixed solution to remove organic impurities and dust adsorbed on the surface, and are cleaned and dried. As the uniformity of the surface is improved and the roughness is formed to be small, the operation characteristics and reliability of the device formed on the upper side are improved, and the low volatility of the KOH solution reduces the consumption of the solution. Unit cost can be reduced.

Description

반도체 웨이퍼 세정방법Semiconductor Wafer Cleaning Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (5)

초기 단계의 반도체 웨이퍼를 KOH 희석용액에 담구어 표면에 흡착되어 있는 유기불순물 및 먼지들을 제거하는 공정과, 상기 반도체 웨이퍼를 순수로 세척하여 건조시키는 공정을 구비하는 반도체 웨이퍼 세정방법.A method of cleaning a semiconductor wafer comprising dipping an initial stage semiconductor wafer in a KOH dilution solution to remove organic impurities and dust adsorbed on the surface, and washing the semiconductor wafer with pure water. 제1항에 있어서, 상기 KOH 희석용액을 KOH : H2O2: H2O = 1 : 1 ~ 5 : 1 ~ 200 혼합용액으로 사용하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.The method of claim 1, wherein the KOH dilution solution is used as a mixed solution of KOH: H 2 O 2 : H 2 O = 1: 1: 1-5: 1 ~ 200. 제1항에 있어서, 상기 세정 공정을 5 ~ 1000초 담구어 실시하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.The semiconductor wafer cleaning method according to claim 1, wherein the cleaning step is immersed for 5 to 1000 seconds. 제1항에 있어서, 상기 KOH 희석용액의 온도를 15 ~ 90℃에서 실시하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.The semiconductor wafer cleaning method according to claim 1, wherein the temperature of the KOH dilution solution is performed at 15 to 90 ° C. 제1항에 있어서, 상기 세정이 완료된 반도체 웨이퍼 표면의 거칠기가 1.5 ±0.5A 이하인 것을 특징으로 하는 반도체 웨이퍼 세정방법.The semiconductor wafer cleaning method according to claim 1, wherein a roughness of the surface of the semiconductor wafer on which the cleaning is completed is 1.5 ± 0.5 A or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018901A 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method KR970003582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018901A KR970003582A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018901A KR970003582A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Publications (1)

Publication Number Publication Date
KR970003582A true KR970003582A (en) 1997-01-28

Family

ID=66526933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950018901A KR970003582A (en) 1995-06-30 1995-06-30 Semiconductor Wafer Cleaning Method

Country Status (1)

Country Link
KR (1) KR970003582A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030047493A (en) * 2001-12-11 2003-06-18 주식회사 실트론 Method for cleaning of silicon wafer after grinding process
KR100420205B1 (en) * 2001-09-10 2004-03-04 주식회사 하이닉스반도체 Method of manufacturing a wafer
KR100445057B1 (en) * 2001-12-31 2004-08-21 주식회사 하이닉스반도체 Method of cleaning semiconductor wafer in back end of line
KR100562484B1 (en) * 1998-09-10 2006-06-23 삼성전자주식회사 CMP device for semiconductor device manufacturing and its driving method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100562484B1 (en) * 1998-09-10 2006-06-23 삼성전자주식회사 CMP device for semiconductor device manufacturing and its driving method
KR100420205B1 (en) * 2001-09-10 2004-03-04 주식회사 하이닉스반도체 Method of manufacturing a wafer
KR20030047493A (en) * 2001-12-11 2003-06-18 주식회사 실트론 Method for cleaning of silicon wafer after grinding process
KR100445057B1 (en) * 2001-12-31 2004-08-21 주식회사 하이닉스반도체 Method of cleaning semiconductor wafer in back end of line

Similar Documents

Publication Publication Date Title
KR100207469B1 (en) Cleaning solution for semiconductor substrate and cleaning method thereby
KR960026331A (en) Cleaning Method of Semiconductor Substrate and Manufacturing Method of Semiconductor Device
KR970003582A (en) Semiconductor Wafer Cleaning Method
KR920010774A (en) Manufacturing Method of Semiconductor Device
KR960005852A (en) Manufacturing Method of Semiconductor Device
KR950027976A (en) Trench cleaning method of semiconductor device
KR950007006A (en) Well cleaning process method of semiconductor device
KR950001950A (en) Oxide film formation method by hydrophilization of wafer
KR100732775B1 (en) Cleaning bath for regenerating a dummy wafer and method of cleaning the dummy wafer using the same
KR970030425A (en) Cleaning Method of Semiconductor Devices
KR970003560A (en) Manufacturing method of semiconductor device
JPS6443384A (en) Steam washing method and washer
KR970003581A (en) Method for removing metal impurities in semiconductor device
KR970003586A (en) Semiconductor Wafer Cleaning Method
KR950009956A (en) Wafer cleaning method
KR940008005A (en) Semiconductor Wafer Cleaning Method
KR950007007A (en) Removal Method of Natural Oxide in Semiconductor Device
KR960039212A (en) Gate oxide film formation method of semiconductor device
KR980005900A (en) Wafer Cleaning Method of Semiconductor Device
KR950015625A (en) Wafer cleaning method
KR940001301A (en) Contact window surface cleaning method
KR970008381A (en) Drying method of semiconductor device
KR950004438A (en) Over-deposited polysilicon film etching method
KR980005901A (en) Method for Cleaning Polysilicon Film of Semiconductor Device
KR19980048608A (en) Wafer cleaning method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination