KR950009956A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR950009956A
KR950009956A KR1019930020199A KR930020199A KR950009956A KR 950009956 A KR950009956 A KR 950009956A KR 1019930020199 A KR1019930020199 A KR 1019930020199A KR 930020199 A KR930020199 A KR 930020199A KR 950009956 A KR950009956 A KR 950009956A
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KR
South Korea
Prior art keywords
wafer
cleaning
cleaning method
rotating
drying
Prior art date
Application number
KR1019930020199A
Other languages
Korean (ko)
Inventor
신찬수
신철호
김상용
안용국
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930020199A priority Critical patent/KR950009956A/en
Publication of KR950009956A publication Critical patent/KR950009956A/en

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Abstract

본 발명은 웨이퍼를 회전시키면서 상기 웨이퍼에 순수를 분사하고 브러쉬로 웨이퍼 표면을 세정하는 린스(rinse) 단계와, 연속적으로 상기 린스 공정이 이루어진 장치에서 웨이퍼를 회전 시키며 건조하는 드라이 단계를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼 세정 방법에 관한 것으로, 공정의 단순화는 물론 획기적으로 불순물 및 결함을 감소시켜 소자의 수율을 향상시키는 효과가 있다.The present invention comprises a rinse step of spraying pure water on the wafer while rotating the wafer and cleaning the surface of the wafer with a brush, and a drying step of rotating and drying the wafer in a device in which the rinse process is performed continuously. The present invention relates to a wafer cleaning method characterized by the above-mentioned method, which simplifies the process and dramatically reduces impurities and defects, thereby improving the yield of the device.

Description

웨이퍼 세정 방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1a도는 종래기술에 따른 웨이퍼 세정후의 불순물 측정 결과 그래프.1A is a graph of a result of measuring impurities after cleaning a wafer according to the related art.

제1b도는 본 발명에 따른 웨이퍼 세정후의 불순물 측정 결과 그래프.Figure 1b is a graph of the results of impurity measurement after wafer cleaning according to the present invention.

Claims (2)

기체상태의 화합물에 의한 웨이퍼 표면처리후 웨이퍼를 세정하는 웨이퍼 세정 방법에 있어서, 웨이퍼를 회전시키면서 상기 웨이퍼에 순수(deionized water)를 분사하고 브러쉬로 웨이퍼 표면을 세정하는 린스(rinse) 단계와, 연속적으로 상기 린스 공정이 이루어진 장치에서 웨이퍼를 회전 시키며 건조하는 드라이 단계를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.A wafer cleaning method for cleaning a wafer after a wafer surface treatment with a gaseous compound, comprising: a rinse step of spraying deionized water onto the wafer while rotating the wafer and cleaning the wafer surface with a brush; Wafer cleaning method characterized in that it comprises a drying step of rotating and drying the wafer in the rinse process device. 제1항에 있어서, 상기 린스단계에서 순수가 아닌 IPA(isoprophyl alcohol)를 웨이퍼에 분사하는 것을 특징으로 하는 웨이퍼 세정 방법.The method of claim 1, wherein in the rinsing step, IPA (isoprophyl alcohol) which is not pure water is sprayed onto the wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930020199A 1993-09-28 1993-09-28 Wafer cleaning method KR950009956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930020199A KR950009956A (en) 1993-09-28 1993-09-28 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930020199A KR950009956A (en) 1993-09-28 1993-09-28 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR950009956A true KR950009956A (en) 1995-04-26

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ID=66824070

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930020199A KR950009956A (en) 1993-09-28 1993-09-28 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR950009956A (en)

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