KR970077273A - Wafer cleaning equipment and wafer cleaning method - Google Patents

Wafer cleaning equipment and wafer cleaning method Download PDF

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Publication number
KR970077273A
KR970077273A KR1019960017356A KR19960017356A KR970077273A KR 970077273 A KR970077273 A KR 970077273A KR 1019960017356 A KR1019960017356 A KR 1019960017356A KR 19960017356 A KR19960017356 A KR 19960017356A KR 970077273 A KR970077273 A KR 970077273A
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KR
South Korea
Prior art keywords
wafer
cleaning
chamber
cleaning method
water spray
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KR1019960017356A
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Korean (ko)
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KR100223331B1 (en
Inventor
박창서
이완기
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019960017356A priority Critical patent/KR100223331B1/en
Publication of KR970077273A publication Critical patent/KR970077273A/en
Application granted granted Critical
Publication of KR100223331B1 publication Critical patent/KR100223331B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 웨이퍼 세정장비 및 웨이퍼 세정방법에 관한 것으로, 웨이퍼 표면의 유기물을 제거하는 웨이퍼 세정방법에 있어서, 오존수스프레이 챔버에서 오존수를 이용한 습식세정방법으로 상기 웨이퍼를 세정하고 상기 웨이퍼를 초순수로 세척하고 상기 웨이퍼를 건조시킨 다음, 상기 웨이퍼를 HF베이퍼 챔버로 이동하여 상기 오존수 스프레이 챔버에서의 세정공정시 발생되는 산화막을 건식세정방법으로, 제거함으로써 상기 웨이퍼 표면의 유기물과 상기 웨이퍼 표면에 발생되는 산화막을 제거함으로써 후속공정인 반도체소자 제조공정을 용이하게 실시할 수 있게 하여 반도체소자의 특성 및 신뢰성을 향상시키는 기술이다.The present invention relates to a wafer cleaning apparatus and a wafer cleaning method, and more particularly, to a wafer cleaning method for removing organic matter on a surface of a wafer, comprising cleaning the wafer by using a wet cleaning method using ozone water in an ozonated water spray chamber, After the wafer is dried, the wafer is transferred to the HF vapor chamber, and the oxide film generated in the cleaning process in the ozone water spray chamber is removed by a dry cleaning method to remove the organic matter on the wafer surface and the oxide film generated on the wafer surface Thereby making it possible to easily carry out a semiconductor device manufacturing process as a subsequent process, thereby improving the characteristics and reliability of the semiconductor device.

Description

웨이퍼 세정장비 및 웨이퍼 세정방법Wafer cleaning equipment and wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 세정장비를 도시한 개략도.FIG. 2 is a schematic view showing a cleaning apparatus according to the present invention; FIG.

Claims (8)

웨이퍼를 이동시킬 수 있는 로버트 부분과, 상기 로버트 부분의 일측에 연결된 오존수 스프레이 챔버와, 상기 로버트 부분의 다른 일측에 연결된 HF베이퍼 챔버와, 상기 로버트 부분의 타측에 연결된 반도체소자를 형성하기 위한 챔버로 구비되는 웨이퍼 세정장비.A chamber for forming a semiconductor element connected to the other side of the Robert part; a chamber for forming a semiconductor element connected to the other side of the Robert part; Wafer cleaning equipment provided. 제1항에 있어서, 상기 오존수 스프레이 챔버는 하측에 린스챔버로 구비되는 것을 특징으로 하는 웨이퍼 세정장비.The wafer cleaning apparatus of claim 1, wherein the ozonated water spray chamber is provided as a rinse chamber on the lower side. 제1항에 있어서, 상기 오존수 스프레이 챔버는 상기 챔버의 상측에 오존수 스프레이 노즐이 구비되는 것을 특징으로 하는 웨이퍼 세정장비.The apparatus of claim 1, wherein the ozonated water spray chamber is provided with an ozonated water spray nozzle above the chamber. 웨이퍼 표면의 유기물을 제거하는 웨이퍼 세정방법에 있어서, 오존수 스프레이 챔버에서 오존수를 이용한 습식세정방법으로 상기 웨이퍼를 세정하는 공정과, 상기 웨이퍼를 린스챔버로 초순수로 세척하고 상기 웨이퍼를 건조시키는 공정과, 상기 웨이퍼를 HF베이퍼 챔버 로 이동하여 상기 오존수 스프레이 챔버에서의 세정공정시 유발되는 산화막을 건식세정방법으로 제거하는 공정을 포함하는 웨이퍼 세정방법.A wafer cleaning method for removing organic matter from a wafer surface, comprising the steps of: cleaning the wafer with a wet cleaning method using ozone water in an ozonated water spray chamber; cleaning the wafer with ultrapure water in a rinsing chamber and drying the wafer; And moving the wafer to an HF vapor chamber to remove an oxide film caused by a cleaning process in the ozonated water spray chamber by a dry cleaning method. 제4항에 있어서, 상기 오존수 초순수에 오존가스를 용해시켜 형성하는 것을 특징으로 하는 웨이퍼 세정방법.The wafer cleaning method according to claim 4, wherein ozone gas is dissolved in the ozonated water. 제4항 또는 제5항에 있어서, 상기 오존수는 오존농도를 10∼20rpm으로 하는 것을 특징으로 하는 웨이퍼 세정방법.The wafer cleaning method according to claim 4 or 5, wherein the ozone water has an ozone concentration of 10 to 20 rpm. 제4항 또는 제5항에 있어서, 상기 오존수 스프레이 세정공정은 상기 웨이퍼를 20∼100 rpm의 회전속도로 5∼10분 동안 실시하는 것을 특징으로 하는 웨이퍼 세정방법.The wafer cleaning method according to claim 4 or 5, wherein the ozonated water spray cleaning step is performed for 5 to 10 minutes at a rotation speed of 20 to 100 rpm. 제4항에 있어서, 상기 건식세정공정은 상기 습식세정공정후에 연속적으로 실시하는 것을 특징으로 하는 웨이퍼 세정방법.The method of claim 4, wherein the dry cleaning step is performed continuously after the wet cleaning step. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017356A 1996-05-22 1996-05-22 Wafer cleaning method and apparatus therefor KR100223331B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017356A KR100223331B1 (en) 1996-05-22 1996-05-22 Wafer cleaning method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017356A KR100223331B1 (en) 1996-05-22 1996-05-22 Wafer cleaning method and apparatus therefor

Publications (2)

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KR970077273A true KR970077273A (en) 1997-12-12
KR100223331B1 KR100223331B1 (en) 1999-10-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101225923B1 (en) * 2011-03-31 2013-01-25 이완기 Mixed semiconductor cleaning apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101225923B1 (en) * 2011-03-31 2013-01-25 이완기 Mixed semiconductor cleaning apparatus

Also Published As

Publication number Publication date
KR100223331B1 (en) 1999-10-15

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