KR200155168Y1 - Cleaning liquid - Google Patents
Cleaning liquid Download PDFInfo
- Publication number
- KR200155168Y1 KR200155168Y1 KR2019960020523U KR19960020523U KR200155168Y1 KR 200155168 Y1 KR200155168 Y1 KR 200155168Y1 KR 2019960020523 U KR2019960020523 U KR 2019960020523U KR 19960020523 U KR19960020523 U KR 19960020523U KR 200155168 Y1 KR200155168 Y1 KR 200155168Y1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- cleaning liquid
- cleaning
- pure water
- hydrogen peroxide
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 25
- 239000007788 liquid Substances 0.000 title claims abstract description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011259 mixed solution Substances 0.000 abstract description 5
- 238000005406 washing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 4
- 241000894006 Bacteria Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C11D2111/22—
Abstract
본 고안은 웨이퍼 상에 공급되어 세정하는 순수인 세정액에 있어서, 순수에 과산화수소가 혼합된 혼합액으로 사용되는 세정액에 관한 것으로, 순수와 과산화수소가 혼합된 혼합액의 온도는 10℃∼150℃를 유지하고, 혼합액을 이용한 세정시간은 10분 이내로 단시간한다.The present invention relates to a cleaning liquid used as a mixed liquid of hydrogen peroxide mixed with pure water in a cleaning liquid supplied and cleaned on a wafer, wherein the temperature of the mixed liquid of pure water and hydrogen peroxide is maintained at 10 ° C. to 150 ° C., The washing time using the mixed solution is short within 10 minutes.
Description
본 고안은 세정액에 관한 것으로, 특히 산화막 습식각공정 후, 공정이 완료된 웨이퍼를 세정하는 세정액으로 사용되는 순수로 인하여 웨이퍼 상에 발생되는 물반점을 방지하기에 적당한 세정액에 관한 것이다.The present invention relates to a cleaning liquid, and more particularly, to a cleaning liquid suitable for preventing water spots generated on a wafer due to pure water used as a cleaning liquid for cleaning the wafer after the oxide film wet etching process.
산화막 습식각공정에서 웨이퍼를 세정하는 과정은 매엽회전방식 또는 일반수조식으로 진행되며, 그 순서는 다음과 같다.In the oxide wet etching process, the wafer is cleaned by a single-leaf rotation method or a general water tank type, and the order is as follows.
우선 매엽회전방식을 이용한 산화막 습식각 후 웨이퍼 세정 순서는 우선, 웨이퍼가 안착된 스핀척이 고속회전되면서, 웨이퍼 상부에 설치된 습식액노즐을 통하여 습식액이 웨이퍼 상부에서 분사되면서 웨이퍼의 산화막 습식각공정이 진행된다. 그리고 산화막 습식각공정이 완료된 후, 웨이퍼 상부에 형성된 세정액노즐을 통하여 세정액이 웨이퍼 상면에 분사되어 린스된다. 그럼으로써 웨이퍼 표면에 잔류되어 있는 습식액이 제거된다.First, the wafer cleaning process after wet etching the oxide film using the single-leaf rotation method, first, the spin chuck on which the wafer is seated is rotated at a high speed, and the wet liquid is injected from the wafer through the wet liquid nozzle installed on the wafer. This is going on. After the oxide film wet etching process is completed, the cleaning liquid is sprayed onto the upper surface of the wafer and rinsed through the cleaning liquid nozzle formed on the wafer. This removes the wet liquid remaining on the wafer surface.
이때, 웨이퍼에 잔류되어 있는 습식액을 제거하는 종래의 세정액으로는 순수를 사용한다.At this time, pure water is used as a conventional cleaning liquid for removing the wet liquid remaining on the wafer.
그리고 일반수조식을 이용한 산화막 습식각 후 웨이퍼 세정은 수조 내에 채워진 습식액에 웨이퍼가 디핑되어 웨이퍼의 산화막 습식각공정이 진행된다. 그리고 산화막 습식각공정이 완료된 후, 같은 수조 또는 다른 수조에 순수를 채우고, 이에 웨이퍼를 디핑하여 세정공정이 진행된다.In the wafer cleaning after the oxide film wet etching using the general water tank type, the wafer is dipped into the wet liquid filled in the water tank, and the oxide film wet etching process of the wafer is performed. After the oxide wet etching process is completed, pure water is filled in the same tank or another tank, and the cleaning process is performed by dipping the wafer.
그러나, 종래 웨이퍼의 산화막 습식각공정에서는 세정액으로 사용되는 순수로 의 세정 완료 후 웨이퍼 건조시, 웨이퍼 상에 물반점이 발생되어 웨이퍼에 불량발생을 유발하는 문제점이 있다.However, in the conventional wet etching process of the oxide film of the wafer, water spots are generated on the wafer when the wafer is dried after cleansing with pure water used as a cleaning liquid, causing defects in the wafer.
본 고안은 이러한 문제점을 해결하고자 안출된 것으로, 웨이퍼에 발생되는 물반점을 방지하는 세정액을 목적으로 한다.The present invention has been made to solve the above problems, it is an object of the cleaning solution to prevent water spots generated on the wafer.
본 고안은 종래에 세정액으로 사용된 순수에 과산화수소를 혼합하여 사용하므로써 건조공정시 웨이퍼 상에 발생되는 물반점을 방지하는 세정액에 관한 것이다.The present invention relates to a cleaning liquid that prevents water spots generated on the wafer during the drying process by mixing hydrogen peroxide with pure water used as a cleaning liquid.
즉, 본 고안은 웨이퍼의 산화막 습식각 후, 세정공정 진행시 웨이퍼에 공급되는 순수에 과산화수소가 혼합되어, 이러한 혼합액이 세정액으로 사용된다.That is, according to the present invention, after the wet etching of the oxide film of the wafer, hydrogen peroxide is mixed with the pure water supplied to the wafer during the cleaning process, such a mixed solution is used as the cleaning liquid.
그리고 순수와 과산화수소가 혼합된 혼합액의 온도는 10℃ ∼150℃ 를 유지하고, 혼합액을 이용한 세정시간은 10분 이내로 단시간하여 과산화수소가 해리하지 않도록 한다.The temperature of the mixed solution of pure water and hydrogen peroxide is maintained at 10 ° C. to 150 ° C., and the cleaning time using the mixed solution is short within 10 minutes so that hydrogen peroxide does not dissociate.
또한, 순수에 혼합되는 과산화수소의 비율은 1% ∼ 50% 로 한다.In addition, the ratio of hydrogen peroxide mixed with pure water shall be 1%-50%.
순수와 과산화수소의 혼합액인 본 고안의 세정액은 세정액의 성분 중 과산화수소가 계면활성제로서 작용하기 때문에 웨이퍼 표면규소막과 순수를 격리시켜 줌으로서 효과적으로 물반점발생이 억제된다.In the cleaning solution of the present invention, which is a mixed solution of pure water and hydrogen peroxide, hydrogen peroxide acts as a surfactant among the components of the cleaning solution to isolate the wafer surface silicon film and pure water, thereby effectively suppressing water spots.
또한, 본 고안의 세정액 성분인 과산화수소는 박테리아의 발생을 억제하여 웨이퍼의 손상을 방지한다.In addition, the hydrogen peroxide component of the cleaning solution of the present invention suppresses the generation of bacteria and prevents damage to the wafer.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020523U KR200155168Y1 (en) | 1996-07-11 | 1996-07-11 | Cleaning liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020523U KR200155168Y1 (en) | 1996-07-11 | 1996-07-11 | Cleaning liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980009691U KR980009691U (en) | 1998-04-30 |
| KR200155168Y1 true KR200155168Y1 (en) | 1999-08-16 |
Family
ID=19461238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019960020523U KR200155168Y1 (en) | 1996-07-11 | 1996-07-11 | Cleaning liquid |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200155168Y1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101815763B1 (en) | 2016-05-03 | 2018-01-05 | 연세대학교 산학협력단 | The oxide layer control method of semiconductor and the semiconductor manufactured thereby |
-
1996
- 1996-07-11 KR KR2019960020523U patent/KR200155168Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101815763B1 (en) | 2016-05-03 | 2018-01-05 | 연세대학교 산학협력단 | The oxide layer control method of semiconductor and the semiconductor manufactured thereby |
Also Published As
| Publication number | Publication date |
|---|---|
| KR980009691U (en) | 1998-04-30 |
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