KR19980050047U - Wafer cleaning equipment - Google Patents
Wafer cleaning equipment Download PDFInfo
- Publication number
- KR19980050047U KR19980050047U KR2019960063218U KR19960063218U KR19980050047U KR 19980050047 U KR19980050047 U KR 19980050047U KR 2019960063218 U KR2019960063218 U KR 2019960063218U KR 19960063218 U KR19960063218 U KR 19960063218U KR 19980050047 U KR19980050047 U KR 19980050047U
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- rotating
- cleaning apparatus
- deionized water
- bath
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
본 고안은 웨이퍼 세척 장치에 관한 것으로, 웨이퍼 표면의 케미컬을 제거하기 위한 탈이온수 배스내에 웨이퍼를 회전시킬 수 있는 회전 수단이 구비하고, 이러한 회전 수단에 의해 상기 배스내에 장입된 웨이퍼를 회전시키면서, 상기 웨이퍼 표면에 탈이온수를 분사시킴으로써, 웨이퍼 표면의 케미컬 제거 효율을 증대시킬 수 있다.The present invention relates to a wafer cleaning apparatus, comprising a rotating means capable of rotating a wafer in a deionized water bath for removing chemicals from the wafer surface, and rotating the wafer loaded into the bath by such rotating means. By spraying deionized water on the wafer surface, the chemical removal efficiency of the wafer surface can be increased.
Description
본 고안은 웨이퍼 세척 장치에 관한 것으로, 특히, 배스내에 회전 수단을 구비하여 웨이퍼 표면 상에 잔류된 케미컬을 완전하게 세척하기 위한 웨이퍼 세척 장치에 관한 것이다.The present invention relates to a wafer cleaning apparatus, and more particularly to a wafer cleaning apparatus having a rotating means in the bath to completely clean the chemical remaining on the wafer surface.
일반적으로, 반도체 소자의 제조 공정에서, 원하는 형태의 패턴을 형성하기 습식 또는 건식 식각 공정이 실시되며, 습식 식각 공정의 경우는 소정의 케미컬을 사용하여 웨이퍼 상에 소정의 패턴을 형성한 후, 상기 공정에서 사용된 케미컬을 제거하기 위한 탈이온수에 의한 린스 공정이 실시된다.In general, in the manufacturing process of a semiconductor device, a wet or dry etching process is performed to form a desired pattern, and in the case of a wet etching process, a predetermined pattern is formed on a wafer using a predetermined chemical, and then A rinse process with deionized water is carried out to remove the chemicals used in the process.
도 1은 종래 기술에 따른 탈이온수를 이용하여 웨이퍼 린스 공정을 실시하기 위한 웨이퍼 세척 장치를 나타낸 개략도로서, 배스(1)내에 화학 용액에 의한 식각 공정이 완료된 웨이퍼(2)를 장입시키고, 탈이온수 분사 장치(3)를 이용하여 상기 웨이퍼(2)에 탈이온수를 분사시켜 케미컬을 제거한다.1 is a schematic view showing a wafer cleaning apparatus for performing a wafer rinsing process using deionized water according to the prior art, in which a wafer 2 having been etched by a chemical solution is charged into a bath 1 and deionized water Deionized water is injected onto the wafer 2 using the injection device 3 to remove chemicals.
그러나, 상기와 같은 종래의 웨이퍼 세척 장치는, 배스내의 밑 부분에 위치되어 있는 탈이온수 분사장치를 이용하여 고정된 웨이퍼 표면에 탈이온수를 분사시켜 상기 웨이퍼 표면을 세척하기 때문에, 웨이퍼 상단 부분에는 탈이온수가 제대로 분사되지 않음으로써, 케미컬이 그대로 잔류하게되는 문제점이 있었다.However, in the conventional wafer cleaning apparatus as described above, the deionized water is sprayed onto the fixed wafer surface by using a deionized water injector located at the bottom of the bath to clean the wafer surface. Since the ionized water is not properly injected, there is a problem that the chemical remains as it is.
따라서, 본 고안은 상기와 같은 문제점을 해결하기 위하여, 배스내에 웨이퍼를 회전시킬 수 있는 회전 수단을 구비하여 상기 웨이퍼를 계속적으로 360°회전시키면서 그 표면에 탈이온수를 분사시킴으로써, 웨이퍼에 잔류된 케미컬을 완전하게 제거할 수 있는 웨이퍼 세척 장치를 제공하는 것을 목적으로 한다.Therefore, in order to solve the above problems, the present invention includes a rotating means capable of rotating the wafer in the bath to continuously rotate the wafer 360 ° while spraying deionized water onto the surface, thereby maintaining the chemical remaining on the wafer. It is an object of the present invention to provide a wafer cleaning apparatus capable of completely removing.
도 1은 종래 기술에 따른 웨이퍼 세척 장치를 나타낸 개략도.1 is a schematic view showing a wafer cleaning apparatus according to the prior art.
도 2는 본 고안에 따른 웨이퍼 세척 장치를 나타낸 정면도.Figure 2 is a front view showing a wafer cleaning apparatus according to the present invention.
도 3은 본 고안에 따른 웨이퍼 세척 장치를 나타낸 측면도.Figure 3 is a side view showing a wafer cleaning apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
11:배스12:회전축11: Bath 12: rotating shaft
13:모터14:웨이퍼13: Motor 14: Wafer
15:탈이온수 분사 장치15: deionized water injection device
상기와 같은 목적은, 배스내에 장입된 웨이퍼에 탈이온수를 분사시켜 상기 웨이퍼 표면의 케미컬을 제거하는 웨이퍼 세척 장치에 있어서,The above object is a wafer cleaning apparatus for removing the chemical on the surface of the wafer by spraying deionized water on the wafer charged in the bath,
상기 배스내에 웨이퍼를 회전시키기 위한 회전 수단이 구비된 것을 특징으로 하는 본 고안에 따른 웨이퍼 세척 장치에 의하여 달성된다.It is achieved by the wafer cleaning apparatus according to the present invention, characterized in that a rotating means for rotating the wafer in the bath is provided.
본 고안에 따르면, 배스내에 구비된 회전 수단을 사용하여 웨이퍼를 회전시키면서 그 표면에 탈이온수를 분사시킴으로써, 케미컬의 제거 효율을 증대시킬 수 있다.According to the present invention, by removing the ionized water onto the surface while rotating the wafer using the rotating means provided in the bath, it is possible to increase the chemical removal efficiency.
[실시예]EXAMPLE
이하, 본 고안의 실시예를 첨부된 도면을 참조하여 보다 상세하게 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 고안의 웨이퍼 세척 장치의 정면도이고, 도 3은 상기 웨이퍼 세척 장치의 측면도로서, 웨이퍼 세척 장치는, 웨이퍼 표면의 케미컬 제거 효율을 증대시키기 위하여 탈이온수 배스(11)내에 웨이퍼를 계속적으로 회전시킬 수 있는 로울러를 이용한 회전축(12)이 설치되고, 상기 회전축(12)은 배스(11) 밖의 상기 회전축(12)을 회전시킬 수 있는 모터(13)와 연결된다.FIG. 2 is a front view of the wafer cleaning apparatus of the present invention, and FIG. 3 is a side view of the wafer cleaning apparatus, wherein the wafer cleaning apparatus continuously moves the wafer into the deionized water bath 11 to increase the chemical removal efficiency of the wafer surface. A rotating shaft 12 using a roller capable of rotating is installed, and the rotating shaft 12 is connected to a motor 13 capable of rotating the rotating shaft 12 outside the bath 11.
상기와 같은 웨이퍼 세척 장치를 이용한 케미컬 제거 방법을 설명하면 다음과 같다.The chemical removal method using the wafer cleaning apparatus as described above is as follows.
이어서, 상기 모터(13)를 구동시켜 상기 웨이퍼(14)와 접촉되어 있는 회전축(12)을 회전시킨다. 이때, 웨이퍼(14)는 회전축(12)과 접촉되어 있기 때문에, 회전축(12)의 회전 방향과 반대 방향으로 회전된다.Subsequently, the motor 13 is driven to rotate the rotating shaft 12 in contact with the wafer 14. At this time, since the wafer 14 is in contact with the rotating shaft 12, the wafer 14 is rotated in a direction opposite to the rotating direction of the rotating shaft 12.
그런 다음, 웨이퍼(14)를 계속적으로 회전시키면서, 탈이온수 분사 장치(15)를 이용하여 상기 웨이퍼(14) 표면에 탈이온수를 분사시켜 웨이퍼(14) 표면의 케미컬을 제거한다. 이때, 웨이퍼(14)가 회전되기 때문에 상기 웨이퍼 표면(14)에 탈이온수가 골고루 분사됨으로써, 케미컬을 완전하게 제거할 수 있다.Then, deionized water is sprayed onto the surface of the wafer 14 using the deionized water jetting device 15 while continuously rotating the wafer 14 to remove the chemical on the surface of the wafer 14. At this time, since the wafer 14 is rotated, deionized water is evenly sprayed on the wafer surface 14, thereby completely removing the chemical.
이상에서와 같이, 본 고안의 웨이퍼 세척 장치는 케미컬을 제거하기 위한 웨이퍼 세척 장치의 배스내에 웨이퍼를 계속적으로 회전시킬 수 있는 회전수단을 구비함으로써, 탈이온수에 의한 케미컬 세척 공정시, 웨이퍼 표면에 탈이온수를 골고루 분사시켜 웨이퍼 표면의 케미컬을 완전하게 제거할 수 있으며, 이에 따라, 반도체 소자의 제조 수율 및 신뢰성을 향상시킬 수 있다.As described above, the wafer cleaning apparatus of the present invention includes a rotating means capable of continuously rotating the wafer in the bath of the wafer cleaning apparatus for removing the chemical, thereby desorbing onto the wafer surface during the chemical cleaning process with deionized water. By spraying the ionized water evenly, the chemical on the surface of the wafer can be completely removed, thereby improving the manufacturing yield and reliability of the semiconductor device.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960063218U KR19980050047U (en) | 1996-12-30 | 1996-12-30 | Wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960063218U KR19980050047U (en) | 1996-12-30 | 1996-12-30 | Wafer cleaning equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980050047U true KR19980050047U (en) | 1998-10-07 |
Family
ID=54001461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019960063218U KR19980050047U (en) | 1996-12-30 | 1996-12-30 | Wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR19980050047U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990016634A (en) * | 1997-08-18 | 1999-03-15 | 윤종용 | Semiconductor Chemical Bath System |
| KR100362623B1 (en) * | 1998-03-13 | 2002-11-27 | 닛폰 덴키(주) | Process for Production of Semiconductor Device and Cleaning Device Used Therein |
| KR20040000754A (en) * | 2002-06-25 | 2004-01-07 | 동부전자 주식회사 | Apparatus for cleaning a semiconductor wafer |
-
1996
- 1996-12-30 KR KR2019960063218U patent/KR19980050047U/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990016634A (en) * | 1997-08-18 | 1999-03-15 | 윤종용 | Semiconductor Chemical Bath System |
| KR100362623B1 (en) * | 1998-03-13 | 2002-11-27 | 닛폰 덴키(주) | Process for Production of Semiconductor Device and Cleaning Device Used Therein |
| KR20040000754A (en) * | 2002-06-25 | 2004-01-07 | 동부전자 주식회사 | Apparatus for cleaning a semiconductor wafer |
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| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |