JPH0528758Y2 - - Google Patents
Info
- Publication number
- JPH0528758Y2 JPH0528758Y2 JP1985028518U JP2851885U JPH0528758Y2 JP H0528758 Y2 JPH0528758 Y2 JP H0528758Y2 JP 1985028518 U JP1985028518 U JP 1985028518U JP 2851885 U JP2851885 U JP 2851885U JP H0528758 Y2 JPH0528758 Y2 JP H0528758Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- nozzle
- water
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 229910001385 heavy metal Inorganic materials 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 4
- 238000012958 reprocessing Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は半導体ウエハ表面処理装置、より詳し
くは半導体ウエハの前処理に用いる装置に関す
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor wafer surface treatment apparatus, and more particularly to an apparatus used for pretreatment of semiconductor wafers.
半導体装置の製造行程においては、シリコンウ
エハ（以下ウエハという）の前処理をしなければ
ならない。その理由は、ウエハ上には重金属が付
着しており、ウエハ表面には自然に二酸化シリコ
ン（SiO2）膜が作られており（かかる酸化膜は
ネイテイブ（native）酸化膜と呼称される）、ま
たこのネイテイブ酸化膜の上には有機系汚染が付
着しているからである。かかるウエハは第３図の
部分的拡大断面図が模式的に示され、同図におい
て、２１はウエハ、符号２２を付した×印は重金
属粒子、２３はネイテイブ酸化膜、符号２４を付
した○印は有機系汚染を示す。そして、ウエハに
対し処理（ウエハプロセス）を進める前に、これ
らの重金属粒子、ネイテイブ酸化膜、有機系汚染
を除去しウエハ表面をきれいな状態すなわち前記
した付着物がない状態にすることが要求される。 In the manufacturing process of semiconductor devices, silicon wafers (hereinafter referred to as wafers) must be pretreated. The reason for this is that heavy metals are attached to the wafer, and a silicon dioxide (SiO 2 ) film is naturally formed on the wafer surface (such an oxide film is called a native oxide film). This is also because organic contamination is attached to the native oxide film. Such a wafer is schematically shown in a partially enlarged cross-sectional view in FIG. 3, in which 21 is a wafer, 22 is marked with an "X" which is a heavy metal particle, 23 is a native oxide film, and 24 is a ○ mark with a symbol 24. The mark indicates organic contamination. Before processing the wafer (wafer process), it is necessary to remove these heavy metal particles, native oxide film, and organic contamination to make the wafer surface clean, that is, free from the aforementioned deposits. .
従来のウエハ前処理は次の順序でなされた。 Conventional wafer pretreatment was performed in the following order.
有機系汚染除去：
先ず、H2O2，NH4OHなどを用いて有機系
汚染を除去し、ウエハを水洗する。 Removal of organic contamination: First, organic contamination is removed using H 2 O 2 , NH 4 OH, etc., and the wafer is washed with water.
次に、HFを用いてネイテイブ酸化膜を除去
し、しかる後にウエハを水洗する。 Next, the native oxide film is removed using HF, and then the wafer is washed with water.
HNO3を用いて重金属粒子を除去し、ウエハ
を水洗し乾燥する。 Remove heavy metal particles using HNO 3 and wash and dry the wafer.
以上の行程で前処理は終るが、各工程の後にな
される水洗には純水を用いる。 The pretreatment is completed with the above steps, but pure water is used for washing after each step.
従来の工程は上述の如く工程数が多く時間がか
かりそれが製品価格を上昇させる原因の一つであ
つた。また数種の薬品を用いるので、コストが高
くなるだけでなく、薬品の管理、作業における薬
品対策および排水処理などが難しく、使用する薬
品の純度も高度のものでなければならない。最近
は特に薬品中に含まれる粒子がウエハに取り込ま
れる逆汚染が問題となつてきている。
As mentioned above, the conventional process involves a large number of steps and is time consuming, which is one of the causes of increased product prices. Furthermore, since several types of chemicals are used, not only is the cost high, but it is also difficult to manage chemicals, take countermeasures against chemicals during work, and treat wastewater, and the chemicals used must be of a high degree of purity. Recently, reverse contamination, in which particles contained in chemicals are introduced into wafers, has become a problem.
本考案は上記問題点を解消したウエハ表面処理
装置を提供するもので、その手段は、試料となる
半導体ウエハを該半導体ウエハの表面が突出する
ように配置できるサセプタと、水のジエツト流を
噴射でき、該半導体ウエハ表面と略平行に、該半
導体ウエハ表面に吹き付けて、該半導体ウエハ表
面を削るように配置されるノズルとを有する構成
としたことを特徴とする半導体ウエハ表面処理に
よつてなされる。
The present invention provides a wafer surface treatment apparatus that solves the above problems, and includes a susceptor that can arrange a semiconductor wafer as a sample so that the surface of the semiconductor wafer protrudes, and a susceptor that sprays a jet stream of water. and a nozzle arranged to spray the semiconductor wafer surface substantially parallel to the semiconductor wafer surface to scrape the semiconductor wafer surface. Ru.
上記装置においては、純水のジエツト流によつ
て前記した有機系汚染、ネイテイブ酸化膜、重金
属などを除去するだけでなく、ウエハ表面を削り
取つてきれいなウエハ面を露出するのである。
In the above apparatus, the jet stream of pure water not only removes the organic contamination, native oxide film, heavy metals, etc. mentioned above, but also scrapes the wafer surface to expose a clean wafer surface.
以下、図面を参照して本考案の実施例を詳細に
説明する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図に本考案実施例が断面図で示され、同図
において、１１はウエハ、１２はウエハサセプタ
（支持部材）、１３はノズル、１４はこれら部分を
収納したカツプを示す。ノズルはそれから出る水
のジエツト流がウエハ表面に衝突するようウエハ
とほぼ同一平面にあるよう配置する。 An embodiment of the present invention is shown in cross section in FIG. 1, in which 11 is a wafer, 12 is a wafer susceptor (supporting member), 13 is a nozzle, and 14 is a cup containing these parts. The nozzle is positioned approximately flush with the wafer so that the jet stream of water exiting the nozzle impinges on the wafer surface.
ウエハは一般に10cmφ以上のものであり、サセ
プタ１２はウエハが内部で動くことのないように
ウエハの寸法に合せた凹部１５が形成されてお
り、ウエハ１１が凹部材１５に納まつた状態でウ
エハ表面はサセプタ１２の上表面よりも上に（高
く）突出する構造とする。 The wafer generally has a diameter of 10 cm or more, and the susceptor 12 is formed with a recess 15 that matches the size of the wafer so that the wafer does not move inside. The surface is structured to protrude above (higher than) the upper surface of the susceptor 12.
操作においては、ブロツク式に図示したポンプ
２０からノズル１３に純水を５Kg／cm2の圧力で供
給し、ウエハ表面に対してほぼ平行にジエツト流
（噴流）１６を加え、ウエハの表面を50〜100Å削
り、前記した有機系汚染、ネイテイブ酸化膜、重
金属粒子などが除去された汚染のないきれいな表
面を露出し、以後の処理が汚染のない単結晶のシ
リコンに対してなされるようにする。 In operation, pure water is supplied to the nozzle 13 from a pump 20 shown in a block diagram at a pressure of 5 kg/cm 2 , and a jet stream 16 is applied almost parallel to the wafer surface, so that the wafer surface is -100 Å is removed to expose a clean surface free from organic contamination, native oxide film, heavy metal particles, etc., so that subsequent processing can be performed on uncontaminated single-crystal silicon.
カツプ１４には排水管１７を設けて使用ずみの
純水を回収、再処理する。そのためには、以下ブ
ロツクで示す回収部１８で水を回収し、次いで再
処理部１９に送つて再処理して汚染のない純水を
ポンプ２０に供給し、このポンプ２０にノズル１
３を連結して前記した如くにジエツト水流を噴出
する。本考案実施例においては薬品は全く使用し
ないのであるから、使用ずみの水の回収および再
処理は通常の技術を用い従来の排水処理に比べて
比較的容易になされ、また大量の水を使用したと
してもそれは前記の如くにして再使用されるので
あるから、コストの大幅な上昇をもたらすことは
ない。 A drain pipe 17 is provided in the cup 14 to collect and reprocess used pure water. To do this, water is recovered in a recovery section 18 shown in the block below, and then sent to a reprocessing section 19 for reprocessing to supply uncontaminated pure water to a pump 20, which is supplied with a nozzle 1.
3 are connected to eject a jet water stream as described above. Since no chemicals are used in the embodiment of the present invention, the recovery and reprocessing of used water is relatively easy compared to conventional wastewater treatment using conventional techniques, and a large amount of water is used. However, since it is reused as described above, it does not result in a significant increase in cost.
作業自体も薬品を用いないから管理が容易であ
り、また、ウエハのサセプタへの装置、除去は自
動的になしうるので、作業性と共に安全性が向上
する。 The work itself is easy to manage because no chemicals are used, and the wafer can be automatically loaded into and removed from the susceptor, improving both workability and safety.
ノズル１３は、第２図ａの平面図に示される如
くウエハの直径よりやや大なる幅のものを用意し
てもよく、または同図ｂに示される如く、幅の小
なるノズルを用い、それを同図の矢印方向に移動
させまたは往復運動をなしてジエツト流がウエハ
全面を平均して走査する構成としてもよい。 The nozzle 13 may have a width slightly larger than the diameter of the wafer as shown in the plan view of FIG. 2a, or a nozzle with a smaller width may be used as shown in FIG. The jet flow may be moved in the direction of the arrow in the figure or reciprocated so that the jet flow averagely scans the entire surface of the wafer.
以上説明したように本考案によれば、ウエハの
表面を純水のジエツト流で削ることによつてウエ
ハの前処理が行われ、薬品を使用しないですみ、
薬品の管理、安全上の問題がなくなるので、作業
性の改善と製造歩留りの向上に効果大である。
As explained above, according to the present invention, the wafer is pretreated by scraping the surface of the wafer with a jet stream of pure water, which eliminates the use of chemicals.
This eliminates chemical management and safety issues, which is highly effective in improving workability and manufacturing yield.
第１図は本考案実施例の断面図、第２図ａとｂ
はそれぞれ第１図の装置のノズルとウエハを示す
平面図、第３図は前処理をなす前のウエハの部分
的拡大断面図である。
図中、１１はウエハ、１２はサセプタ、１３は
ノズル、１４はカツプ、１５はサセプタの凹部、
１６はジエツト流、１７は排水管、１８は水の回
収部、１９は再処理部、２０はポンプ、をそれぞ
れ示す。
Figure 1 is a sectional view of the embodiment of the present invention, Figure 2 a and b
1 is a plan view showing the nozzle and wafer of the apparatus shown in FIG. 1, and FIG. 3 is a partially enlarged sectional view of the wafer before pretreatment. In the figure, 11 is a wafer, 12 is a susceptor, 13 is a nozzle, 14 is a cup, 15 is a recess in the susceptor,
16 is a jet flow, 17 is a drain pipe, 18 is a water recovery section, 19 is a reprocessing section, and 20 is a pump.
Claims (1)
面が突出するように配置できるサセプタと、 水のジエツト流を噴射でき、該半導体ウエハ表
面と略平行に、該半導体ウエハ表面に吹き付け
て、該半導体ウエハ表面を削るように配置される
ノズルと を有する半導体ウエハ表面処理装置。[Claims for Utility Model Registration] A susceptor capable of arranging a semiconductor wafer as a sample so that the surface of the semiconductor wafer protrudes; A semiconductor wafer surface treatment apparatus comprising: a nozzle arranged so as to spray onto the surface of the semiconductor wafer and scrape the surface of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985028518U JPH0528758Y2 (en) | 1985-02-28 | 1985-02-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985028518U JPH0528758Y2 (en) | 1985-02-28 | 1985-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144636U JPS61144636U (en) | 1986-09-06 |
| JPH0528758Y2 true JPH0528758Y2 (en) | 1993-07-23 |
Family
ID=30526465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985028518U Expired - Lifetime JPH0528758Y2 (en) | 1985-02-28 | 1985-02-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0528758Y2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4999480A (en) * | 1973-01-02 | 1974-09-19 | ||
| JPS5493972A (en) * | 1978-01-06 | 1979-07-25 | Mitsubishi Electric Corp | Etching unit of semiconductor element |
| JPS5580319A (en) * | 1978-12-12 | 1980-06-17 | Nec Corp | Manufacture of semiconductor device |
| JPS5844838B2 (en) * | 1979-08-06 | 1983-10-05 | 鈴木シヤツタ−工業株式会社 | Manual operation box for shutting down the shutter at any time |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5844838U (en) * | 1981-09-21 | 1983-03-25 | 三菱電機株式会社 | Wafer cleaning and drying equipment |
-
1985
- 1985-02-28 JP JP1985028518U patent/JPH0528758Y2/ja not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4999480A (en) * | 1973-01-02 | 1974-09-19 | ||
| JPS5493972A (en) * | 1978-01-06 | 1979-07-25 | Mitsubishi Electric Corp | Etching unit of semiconductor element |
| JPS5580319A (en) * | 1978-12-12 | 1980-06-17 | Nec Corp | Manufacture of semiconductor device |
| JPS5844838B2 (en) * | 1979-08-06 | 1983-10-05 | 鈴木シヤツタ−工業株式会社 | Manual operation box for shutting down the shutter at any time |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61144636U (en) | 1986-09-06 |
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