JPS61166134A - Processor - Google Patents

Processor

Info

Publication number
JPS61166134A
JPS61166134A JP575785A JP575785A JPS61166134A JP S61166134 A JPS61166134 A JP S61166134A JP 575785 A JP575785 A JP 575785A JP 575785 A JP575785 A JP 575785A JP S61166134 A JPS61166134 A JP S61166134A
Authority
JP
Japan
Prior art keywords
processing
processing tank
processing vessel
wafer
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP575785A
Other languages
Japanese (ja)
Inventor
Keiji Watanabe
慶二 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP575785A priority Critical patent/JPS61166134A/en
Publication of JPS61166134A publication Critical patent/JPS61166134A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Abstract

PURPOSE:To assure the excellent result of cleaning processing by a method wherein processing fluid fed from jetting nozzles to a processing vessel is provided with a vortex flow until the fluid reaches a drain nozzle provided on the central part of processing vessel. CONSTITUTION:The ends 5 of multiple jetting nozzles 4 with their sections formed gradually tapering off to the open ends projecting into a processing vessel 1 are formed in one direction along the inner periphery of processing vessel 1 to provide pure water jet-fed to the processing vessel 1 with a vortex flow. Besides, a drain nozzle 6 with an opening at specified level is provided on the central part of processing vessel 1 so that the pure water fed from the jetting nozzles 4 to be brought into contact with wafers 2 contained in wafer cartridge 3 may be drained whenever it overflows the specified water level. Through these procedures, the pure water fed from the jetting nozzles 4 may come into contact with the surface of wafers 2 efficiently and sufficiently until it is drained so that any etchant and foreign matters hardly removed may be cleaned up effectively.

Description

【発明の詳細な説明】 [技術分野] 本発明は、処理技術、特に、半導体装置の製造における
ウェハの洗浄処理に適用して有効な技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a processing technology, and particularly to a technology that is effective when applied to a wafer cleaning process in the manufacture of semiconductor devices.

[背景技術] 半導体装置の製造においては、たとえばシリコンなどの
半導体からなる円盤状の基板、すなわちウェハに、化学
気相成長法や蒸着などで形成される酸化物膜や金属膜な
どを光蝕刻法によって所定のパターンの絶縁層や配線構
造などに形成する操作を繰り返すことによって、ウェハ
に所定の構造の半導体素子を形成することが行われる。
[Background Art] In the manufacture of semiconductor devices, oxide films, metal films, etc. formed by chemical vapor deposition or vapor deposition are formed on a disk-shaped substrate, that is, a wafer, made of a semiconductor such as silicon by photoetching. Semiconductor elements having a predetermined structure are formed on a wafer by repeating operations for forming an insulating layer, wiring structure, etc. in a predetermined pattern.

たとえば、ウェハ上にアルミニウムからなる配線構造を
形成するだめのエツチングとしては、所定の濃度の酸な
どからなるエツチング液にウェハを浸漬し、ウェハ上に
形成されたアルミニウム膜の不用な部分を溶解除去する
、いわゆるウェットエツチングが行われる。
For example, in etching to form a wiring structure made of aluminum on a wafer, the wafer is immersed in an etching solution made of acid at a predetermined concentration, and unnecessary parts of the aluminum film formed on the wafer are dissolved and removed. So-called wet etching is performed.

この場合、エツチング終了後ウェハ表面に残留されるエ
ツチング液や反応生成物などは後に半導体素子の腐食の
原因となるなどの不都合があるため、エツチング後、所
定の純度の純水による洗浄操作が行われる。
In this case, the etching solution and reaction products remaining on the wafer surface after etching may cause corrosion of the semiconductor elements later, so after etching, a cleaning operation with purified water of a specified purity is performed. be exposed.

このウェハの洗浄操作としては、純水の貯留槽に所定数
のウェハが収納されたカートリッジを浸漬し、作業台が
カー1−リッジを適宜I」動さ廿ることによって行うこ
とが考えられろ。
This wafer cleaning operation may be carried out by immersing a cartridge containing a predetermined number of wafers in a pure water storage tank, and moving the cartridge ridge as appropriate on the workbench. .

しかしながら、上記の洗浄操作では、たとえばエツチン
グ液の粘+’lが比較的大きい場合には、洗浄が不十分
となり、後に半導体素子の欠陥発生の原因となるなどの
欠点があることを本発明者は見いだした。
However, the inventor of the present invention has discovered that the above-mentioned cleaning operation has drawbacks, such as, for example, when the viscosity of the etching solution is relatively large, cleaning may be insufficient, which may later cause defects in semiconductor elements. I found it.

なお、ウェハ処理技術について説明されている文献とし
は、株式会社工業調査会、昭和56年11月1011発
行「電子材料11981年11月号別冊、P95〜P1
02がある。
The literature explaining wafer processing technology is "Electronic Materials 1 November 1981 Special Issue, P95-P1, published by Kogyo Research Association Co., Ltd., November 1011, 1981.
There is 02.

[発明の目的] 本発明の目的は、良好な処理結果を得ることが可能な処
理技術を提供することにある。
[Object of the Invention] An object of the present invention is to provide a processing technique that can obtain good processing results.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添イ」図面から明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の1既要] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、つぎの通りである。
[1 Summary of the Invention] A brief summary of typical inventions disclosed in this application is as follows.

ず2(わち、被処理物が位置される処理槽に、処理槽の
内周面に沿う方向に処理流体を噴射供給する少なくと4
)一つの噴射ノズルと、処理槽の中央部に重直に信置さ
れ、処理槽の底面から所定の高さに設iJられた開口部
を通して処理流体を処理槽の外部に排出する排出ノズル
とを設けるごとにより、噴14 、/ズルから処理槽内
に供給される処理流、体が処理槽の中央部に設iノられ
た排出ノズルに至る間に渦流が形成され、処理槽内に位
置される被処理物に処理流体が効率よくかつ十分接触さ
れるようにして、良好な処理結果を得るよ・うにしたも
のである。
2 (i.e., at least 4 times the processing fluid is injected into the processing tank in which the object to be processed is placed in the direction along the inner peripheral surface of the processing tank)
) one injection nozzle, and a discharge nozzle that discharges the processing fluid to the outside of the processing tank through an opening placed vertically in the center of the processing tank and set at a predetermined height from the bottom of the processing tank; By providing each jet 14, a vortex is formed between the processing flow supplied into the processing tank from the jet nozzle and the discharge nozzle installed in the center of the processing tank, and The processing fluid is efficiently and sufficiently brought into contact with the object to be processed, thereby obtaining good processing results.

[実施例] 第1図(a)は、本発明の一実施例であるウェハの洗浄
処理装置の一部を破断して示す平面図であり、第1図(
b)は同図(a)において、線B−Bで示される部分の
断面図である。
[Embodiment] FIG. 1(a) is a partially cutaway plan view showing a wafer cleaning processing apparatus which is an embodiment of the present invention.
b) is a cross-sectional view of a portion indicated by line BB in FIG.

処理槽1の内部には、所定数のウェハ2(被処理物)を
、その平面が垂直方向となるように互いに平行な状態に
収納する複数のウェハカートリッジ3が着脱自在に位置
されている。
Inside the processing tank 1, a plurality of wafer cartridges 3 are removably located, which accommodate a predetermined number of wafers 2 (workpieces) in parallel to each other so that their planes are perpendicular.

この場合、ウェハカートリッジ3は、その中に収納され
たウェハ2の平面が処理槽1の半径方向にほぼ垂直とな
るように、処理槽1内に位置される。
In this case, the wafer cartridge 3 is positioned within the processing tank 1 such that the plane of the wafer 2 housed therein is substantially perpendicular to the radial direction of the processing tank 1.

さらに、処理槽Iの周囲にば、処理槽1の周囲壁面部を
貫通して複数の噴射ノズル4が設けられ、所定のポンプ
機構(図示せず)に接続されることによって、処理槽1
内に、たとえば所定の純度の純水が供給される構造とさ
れている。
Further, a plurality of injection nozzles 4 are provided around the processing tank I by penetrating the peripheral wall surface of the processing tank 1, and are connected to a predetermined pump mechanism (not shown).
The structure is such that, for example, pure water of a predetermined purity is supplied inside.

この場合、複数の噴射ノズル4の処理槽1の内部に突出
され、断面積が開放端に向かって徐々に減少するように
形成された先端部5は、処理槽1の内周面に沿って同一
方向に向くように形成され、処理槽1内に噴射41ζ給
される純水が渦流をなすようにされている。
In this case, the tip portions 5 of the plurality of injection nozzles 4 project into the processing tank 1 and are formed so that the cross-sectional area gradually decreases toward the open end, along the inner circumferential surface of the processing tank 1. They are formed so as to face in the same direction, and the pure water injected 41ζ into the processing tank 1 forms a whirlpool.

また、処理槽1の中央部には、処理槽1の底面から所定
の高さに開「1部を有する排出ノズル6が設けられてお
り、前記の複数の噴射ノズル4から処理槽1内に渦流を
なして供給され、ウェハカートリッジ3に収納されたウ
ェハ2に接触される純水が、所定の水位以上になった時
に開口部を通して処理槽1の外部に排出されるように構
成されている。
Further, in the center of the processing tank 1, there is provided a discharge nozzle 6 having an open section at a predetermined height from the bottom of the processing tank 1. The pure water supplied in a vortex and brought into contact with the wafers 2 housed in the wafer cartridge 3 is configured to be discharged to the outside of the processing tank 1 through the opening when the water reaches a predetermined water level or higher. .

このように、ウェハカートリッジ3に収納された所定数
のウェハ2に、処理槽1内の周囲に設けられた噴1・1
ノズル4から純水が渦状に供給されるため、噴射ノズル
4を通して処理槽l内に供給される純水が、排出ノズル
4を通じて排出されるまでの間に、個々のウェハ2の表
面に効率良くかつ十分に接触され、ウェハ2の表面に付
着される、たとえば粘性が比較的大きいために除去され
にくいエツチング液や異物などが効果的に洗浄されてウ
ェハ2の表面から除去されることとなり、良好な洗浄処
理結果を得ることができる。
In this way, a predetermined number of wafers 2 stored in the wafer cartridge 3 are exposed to the jets 1 and 1 provided around the inside of the processing tank 1.
Since pure water is supplied from the nozzle 4 in a vortex, the pure water supplied into the processing tank l through the injection nozzle 4 is efficiently applied to the surface of each wafer 2 before being discharged through the discharge nozzle 4. Furthermore, the wafer 2 is sufficiently contacted, and the etching liquid and foreign substances that are difficult to remove due to their relatively high viscosity and adhere to the surface of the wafer 2 are effectively cleaned and removed from the surface of the wafer 2, resulting in a good condition. It is possible to obtain excellent cleaning results.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

始めに、所定数のウェハ2を収納した複数のウェハカー
トリッジ3が処理槽1の内部に位置される。
First, a plurality of wafer cartridges 3 containing a predetermined number of wafers 2 are placed inside the processing tank 1 .

次に、処理槽Jの周囲に設けられた複数の噴射ノズル4
の先端部5を通して所定の純度の純水が処理槽1の内部
に供給される。
Next, a plurality of injection nozzles 4 provided around the processing tank J
Pure water of a predetermined purity is supplied into the processing tank 1 through the tip 5 of the tank.

この場合、噴射ノズル4の先端部5ば処理槽1の内周面
に沿う同一の方向に向くように構成されており、処理槽
1内に供給される純水は処理槽1内において同一方向に
流動され、渦流となってウェハカートリッジ3に収納さ
れたウェハ2の表面に効率良くかつ十分に接触される。
In this case, the tips 5 of the injection nozzles 4 are configured to face in the same direction along the inner peripheral surface of the processing tank 1, and the pure water supplied into the processing tank 1 is directed in the same direction within the processing tank 1. The wafer 2 flows into a vortex and efficiently and sufficiently contacts the surface of the wafer 2 housed in the wafer cartridge 3.

この結果、ウェハ2の表面に(=J着される、たとえば
エツチング液や異物などが効果的に洗浄されてウェハ2
の表面から除去される。
As a result, the etching solution, foreign matter, etc. deposited on the surface of the wafer 2 (=J) are effectively cleaned and the wafer 2
removed from the surface.

ウェハ2の表面から除去されたエツチング液や異物など
を含む純水は、処理槽1の中央部に設げられた排出ノズ
ル6に至り、処理槽1の外部に排出される。
The pure water containing the etching solution and foreign matter removed from the surface of the wafer 2 reaches a discharge nozzle 6 provided in the center of the processing tank 1 and is discharged to the outside of the processing tank 1.

所定の時間、」二記の洗浄操作が継続された後、噴射ノ
ズル4からの純水の供給は停止され、ウェハ2を収納す
るウェハカートリッジ3は処理槽1の外部に取り出され
、次のたとえば乾燥工程などに搬送される。
After the cleaning operation described in "2" is continued for a predetermined period of time, the supply of pure water from the injection nozzle 4 is stopped, and the wafer cartridge 3 containing the wafer 2 is taken out of the processing tank 1, and the following e.g. Transported to drying process, etc.

−J二記の一連の操作を繰り返すこ七によって、多数の
ウェハ2の洗浄処理が効率良く、効果的に行われる。
-J By repeating the series of operations described in Section 2, the cleaning process for a large number of wafers 2 can be performed efficiently and effectively.

[効果] (11、被処理物が位置される処理槽と、この処理槽の
内周面に沿う方向に処理流体を噴射供給する少なくとも
一つの噴射ノズルと、前記処理槽の中央部に垂直に位置
され、処理槽の底面から所定の高さに設けられた開口部
を通じて処理流体を処理槽の外部に排出する排出ノズル
とが設けられているため、被処理物に供給される処理流
体が排出ノズルに至る間に、渦流を形成して被処理物に
供給され、被処理物と処理流体が効率良くかつ十分に接
触される結果、良好な処理結果が得られる。
[Effects] (11. A processing tank in which an object to be processed is placed, at least one injection nozzle for spraying and supplying processing fluid in a direction along the inner peripheral surface of the processing tank, and a and a discharge nozzle that discharges the processing fluid to the outside of the processing tank through an opening provided at a predetermined height from the bottom of the processing tank, so that the processing fluid supplied to the object to be processed is discharged. While reaching the nozzle, a vortex is formed and the fluid is supplied to the object to be processed, and the object to be processed and the processing fluid come into contact with each other efficiently and sufficiently, resulting in good processing results.

(2)、前記illの結果、処理のむらが発生ずること
が防止され、均一処理が可能となるので、処理工程にお
ける歩留りが向上される。
(2) As a result of the above-mentioned ill, the occurrence of unevenness in processing is prevented and uniform processing becomes possible, so that the yield in the processing process is improved.

(3)、前記(11,(21の結果、処理工程における
生産性が向上される。
(3) As a result of (11 and (21) above, productivity in the treatment process is improved.

以上本発明Hによってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present invention H has been specifically explained above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、処理槽の形状は円筒状に限らず、多角形断面
形状とすることも可能である。
For example, the shape of the processing tank is not limited to a cylindrical shape, but may also have a polygonal cross-sectional shape.

[利用分野] 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハの洗浄処理技
術に適用した場合について説明したが、それに限定され
るものではなく、たとえば、ウェットエツチング技術に
適用することも可能である。
[Field of Application] In the above description, the invention made by the present inventor was mainly applied to the field of application for wafer cleaning, which is the background of the invention, but the present invention is not limited to this, for example, It is also possible to apply wet etching techniques.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は、本発明の一実施例であるウェハの洗浄
処理装置の一部を破断して示す平面図、第1図(b)は
同図(a)において、線B−Bで示される部分の断面図
である。 1・・・処理槽、2・・・ウェハ(被処理物)、3・・
・ウェハカートリッジ、4・・・噴射ノズル、5・・・
先端部、6・・・排出ノズル。
FIG. 1(a) is a partially cutaway plan view of a wafer cleaning processing apparatus according to an embodiment of the present invention, and FIG. FIG. 1... Processing tank, 2... Wafer (workpiece), 3...
・Wafer cartridge, 4... Injection nozzle, 5...
Tip, 6...Discharge nozzle.

Claims (1)

【特許請求の範囲】 1、被処理物を処理流体中に浸漬することによって処理
を行う処理装置であって、被処理物が位置される処理槽
と、該処理槽の内周面に沿う方向に処理流体を噴射供給
する少なくとも一つの噴射ノズルと、前記処理槽の中央
部に垂直に位置され、処理槽の底面から所定の高さに設
けられた開口部を通して処理流体を処理槽の外部に排出
する排出ノズルとを有することを特徴とする処理装置。 2、被処理物がウェハであることを特徴とする特許請求
の範囲第1項記載の処理装置。 3、処理流体が所定の純度の洗浄水であることを特徴と
する特許請求の範囲第1項記載の処理装置。
[Claims] 1. A processing device that performs processing by immersing an object to be processed in a processing fluid, comprising a processing tank in which the object to be processed is placed, and a direction along the inner circumferential surface of the processing tank. at least one injection nozzle for injecting a processing fluid into the processing tank; and an opening located vertically in the center of the processing tank and provided at a predetermined height from the bottom of the processing tank to supply the processing fluid to the outside of the processing tank. A processing device characterized by having a discharge nozzle for discharging. 2. The processing apparatus according to claim 1, wherein the object to be processed is a wafer. 3. The processing apparatus according to claim 1, wherein the processing fluid is cleaning water of a predetermined purity.
JP575785A 1985-01-18 1985-01-18 Processor Pending JPS61166134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP575785A JPS61166134A (en) 1985-01-18 1985-01-18 Processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP575785A JPS61166134A (en) 1985-01-18 1985-01-18 Processor

Publications (1)

Publication Number Publication Date
JPS61166134A true JPS61166134A (en) 1986-07-26

Family

ID=11619989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP575785A Pending JPS61166134A (en) 1985-01-18 1985-01-18 Processor

Country Status (1)

Country Link
JP (1) JPS61166134A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03139832A (en) * 1989-10-25 1991-06-14 Ebara Corp Jet scrubber
US5076765A (en) * 1988-08-03 1991-12-31 Nissan Motor Company, Altd. Shaft seal arrangement of turbocharger
JPH06315669A (en) * 1993-04-30 1994-11-15 Shierupa Seisakusho:Kk Washing machine for water washing of small parts
US6691718B2 (en) * 1999-07-28 2004-02-17 Semitool, Inc. Wafer container cleaning system
US6797076B1 (en) 1998-07-10 2004-09-28 Semitool, Inc. Spray nozzle system for a semiconductor wafer container cleaning aparatus
US6830057B2 (en) 2002-11-01 2004-12-14 Semitool, Inc. Wafer container cleaning system
US6904920B2 (en) 1998-07-10 2005-06-14 Semitool, Inc. Method and apparatus for cleaning containers
JP2010185455A (en) * 2009-02-12 2010-08-26 Abb Turbo Systems Ag Compressor-side shaft seal of exhaust gas turbocharger

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5076765A (en) * 1988-08-03 1991-12-31 Nissan Motor Company, Altd. Shaft seal arrangement of turbocharger
JPH03139832A (en) * 1989-10-25 1991-06-14 Ebara Corp Jet scrubber
JPH06315669A (en) * 1993-04-30 1994-11-15 Shierupa Seisakusho:Kk Washing machine for water washing of small parts
US6797076B1 (en) 1998-07-10 2004-09-28 Semitool, Inc. Spray nozzle system for a semiconductor wafer container cleaning aparatus
US6904920B2 (en) 1998-07-10 2005-06-14 Semitool, Inc. Method and apparatus for cleaning containers
US6691718B2 (en) * 1999-07-28 2004-02-17 Semitool, Inc. Wafer container cleaning system
US6830057B2 (en) 2002-11-01 2004-12-14 Semitool, Inc. Wafer container cleaning system
US7060138B2 (en) 2002-11-01 2006-06-13 Semitool, Inc. Methods for cleaning wafer containers
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