JPH02309638A - Wafer etching device - Google Patents

Wafer etching device

Info

Publication number
JPH02309638A
JPH02309638A JP13227689A JP13227689A JPH02309638A JP H02309638 A JPH02309638 A JP H02309638A JP 13227689 A JP13227689 A JP 13227689A JP 13227689 A JP13227689 A JP 13227689A JP H02309638 A JPH02309638 A JP H02309638A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wafer
surface
out
etching liquid
jetting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13227689A
Inventor
Ryuji Iwama
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable etching on the main surface of a wafer to be uniform and protect the other surface by jetting out etching liquid from the jetting-out nozzle to the main surface of the wafer while attracting and rotating the wafer and at the same time by jetting out water or gas to the periphery part of the other surface upward.
CONSTITUTION: While attracting and rotating a wafer 1 by a vacuum chuck 2, etching liquid is jetted out of an etching liquid jetting-out nozzle 12 onto the main surface which faces upward from the wafer 1, thus enabling the main surface to be etched. At this time, the etching liquid is swept away from the periphery part due to rotation of the wafer and then drops. Also, even if a reaction gas is generated, it is immediately eliminated due to strong jetting out of the etching liquid. At the same time, water or gas is inversely jetted out upward from an inverse jetting-out port 11 to the periphery part of the other surface which faces downward of the wafer 1, thus preventing the etching liquid from reaching the other surface which faces downward. It enables the wafer main surface to be etched uniformly and protects the other surface of wafer while the etching liquid does not go around.
COPYRIGHT: (C)1990,JPO&Japio
JP13227689A 1989-05-24 1989-05-24 Wafer etching device Pending JPH02309638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13227689A JPH02309638A (en) 1989-05-24 1989-05-24 Wafer etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13227689A JPH02309638A (en) 1989-05-24 1989-05-24 Wafer etching device

Publications (1)

Publication Number Publication Date
JPH02309638A true true JPH02309638A (en) 1990-12-25

Family

ID=15077497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13227689A Pending JPH02309638A (en) 1989-05-24 1989-05-24 Wafer etching device

Country Status (1)

Country Link
JP (1) JPH02309638A (en)

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997021243A1 (en) * 1995-12-04 1997-06-12 Hitachi, Ltd. Method for processing semiconductor wafer, method for manufacturing ic card, and carrier
JP2001135612A (en) * 1999-07-09 2001-05-18 Applied Materials Inc Apparatus and method for etching substrate
EP1168419A1 (en) * 2000-06-19 2002-01-02 Interuniversitair Micro-Elektronica Centrum Method and apparatus for localized liquid treatment of the surface of a substrate
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
EP1372186A2 (en) * 2000-10-31 2003-12-17 Sez Ag Apparatus for liquid treatment of wafers
US6683007B1 (en) 1999-03-15 2004-01-27 Nec Corporation Etching and cleaning methods and etching and cleaning apparatus used therefor
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US7003899B1 (en) 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7045018B2 (en) 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
US7069937B2 (en) 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7170190B1 (en) 2003-12-16 2007-01-30 Lam Research Corporation Apparatus for oscillating a head and methods for implementing the same
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US7254900B2 (en) 2004-09-30 2007-08-14 Lam Research Corporation Wafer edge wheel with drying function
US7271109B2 (en) 1994-09-26 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Solution applying apparatus and method
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7353560B2 (en) 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7568490B2 (en) 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US7584761B1 (en) 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
JP2010109118A (en) * 2008-10-30 2010-05-13 Shibaura Mechatronics Corp Substrate processing apparatus and substrate processing method
US7867565B2 (en) 2003-06-30 2011-01-11 Imec Method for coating substrates
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US7975708B2 (en) 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8580045B2 (en) 2009-05-29 2013-11-12 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7271109B2 (en) 1994-09-26 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Solution applying apparatus and method
US6573158B2 (en) 1995-12-04 2003-06-03 Hitachi, Ltd. Methods of processing semiconductor wafer and producing IC card, and carrier
US6589855B2 (en) 1995-12-04 2003-07-08 Hitachi, Ltd. Methods of processing semiconductor wafer and producing IC card, and carrier
US6342434B1 (en) 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
WO1997021243A1 (en) * 1995-12-04 1997-06-12 Hitachi, Ltd. Method for processing semiconductor wafer, method for manufacturing ic card, and carrier
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
US6851435B2 (en) 1997-09-24 2005-02-08 Interuniversitair Microelektronica Centrum (Imec, Vzw) Method and apparatus for localized liquid treatment of the surface of a substrate
US6964724B2 (en) 1999-03-15 2005-11-15 Nec Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
US8420549B2 (en) 1999-03-15 2013-04-16 Renesas Electronics Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
US6683007B1 (en) 1999-03-15 2004-01-27 Nec Corporation Etching and cleaning methods and etching and cleaning apparatus used therefor
US7862658B2 (en) 1999-03-15 2011-01-04 Renesas Electronics Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
JP4603136B2 (en) * 1999-07-09 2010-12-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Apparatus and method for etching a substrate
JP2001135612A (en) * 1999-07-09 2001-05-18 Applied Materials Inc Apparatus and method for etching substrate
EP1168419A1 (en) * 2000-06-19 2002-01-02 Interuniversitair Micro-Elektronica Centrum Method and apparatus for localized liquid treatment of the surface of a substrate
US7584761B1 (en) 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
KR100789337B1 (en) * 2000-10-31 2007-12-28 세즈 아게 Device for liquid treatment of wafer-shaped articles
KR100796709B1 (en) * 2000-10-31 2008-01-21 세즈 아게 Device for liquid treatment of wafer-shaped articles
EP1372186A2 (en) * 2000-10-31 2003-12-17 Sez Ag Apparatus for liquid treatment of wafers
EP1372186A3 (en) * 2000-10-31 2005-10-26 Sez Ag Apparatus for liquid treatment of wafers
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7127831B2 (en) 2002-09-30 2006-10-31 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7240679B2 (en) 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7069937B2 (en) 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US7045018B2 (en) 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7264007B2 (en) 2002-09-30 2007-09-04 Lam Research Corporation Method and apparatus for cleaning a substrate using megasonic power
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7867565B2 (en) 2003-06-30 2011-01-11 Imec Method for coating substrates
US7170190B1 (en) 2003-12-16 2007-01-30 Lam Research Corporation Apparatus for oscillating a head and methods for implementing the same
US7353560B2 (en) 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US7568490B2 (en) 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7143527B2 (en) 2004-09-30 2006-12-05 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7003899B1 (en) 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7254900B2 (en) 2004-09-30 2007-08-14 Lam Research Corporation Wafer edge wheel with drying function
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US7975708B2 (en) 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
JP2010109118A (en) * 2008-10-30 2010-05-13 Shibaura Mechatronics Corp Substrate processing apparatus and substrate processing method
US8580045B2 (en) 2009-05-29 2013-11-12 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer

Similar Documents

Publication Publication Date Title
US5100476A (en) Method and apparatus for cleaning semiconductor devices
US6149759A (en) Process and device for one-sided treatment of disk-shaped objects
JPS6212129A (en) Plasma-processing apparatus
JPS60249328A (en) Apparatus for dry-etching and chemical vapor-phase growth of semiconductor wafer
JPS62150828A (en) Wafer drying apparatus
JPH03129855A (en) Semiconductor device and manufacture thereof
JPH04186626A (en) Etching apparatus
JPS5727168A (en) Equipment for wet treatment
JPS5690525A (en) Manufacture of semiconductor device
JPH03276626A (en) Etching method for film to be etched composed of silicon compound system
JPS5434751A (en) Washing method for silicon wafer
USH1373H (en) Wafer handling apparatus and method
JPS6214439A (en) Manufacture of semiconductor device
JPH04281205A (en) Etching method
JPS523390A (en) Manufacturing method of semiconductor device
JPH02309638A (en) Wafer etching device
JPH02192717A (en) Resist removing device
JPS636843A (en) Substrate surface treatment
JPS63138737A (en) Dry etching apparatus
JPH0330326A (en) Semiconductor manufacturing apparatus
JPS5572029A (en) Tray for semiconductor wafer
JPS62264626A (en) Wet etching apparatus
JPS6313347A (en) Manufacture of thin-film semiconductor device
JPH04106954A (en) Manufacture of semiconductor device using liquid phase cvd method
JPS5511311A (en) Method of photoresist developing