JPH01140727A - Cleaning of substrate - Google Patents

Cleaning of substrate

Info

Publication number
JPH01140727A
JPH01140727A JP30049287A JP30049287A JPH01140727A JP H01140727 A JPH01140727 A JP H01140727A JP 30049287 A JP30049287 A JP 30049287A JP 30049287 A JP30049287 A JP 30049287A JP H01140727 A JPH01140727 A JP H01140727A
Authority
JP
Japan
Prior art keywords
cleaning
wafer
substrate
hydrogen peroxide
processing unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30049287A
Other languages
Japanese (ja)
Other versions
JPH0691986B2 (en
Inventor
Eiichiro Hayashi
林 栄一郎
Masahiro Aeba
饗庭 雅博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP62300492A priority Critical patent/JPH0691986B2/en
Publication of JPH01140727A publication Critical patent/JPH01140727A/en
Publication of JPH0691986B2 publication Critical patent/JPH0691986B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

PURPOSE:To clean and remove a fine particle efficiently by a method wherein, prior to a wiping and cleaning process or an ultrasonic cleaning process, the outer surface of a substrate is cleaned by using a cleaning liquid containing hydrogen peroxide or ozone. CONSTITUTION:An ammonia hydrogen peroxide solution as a cleaining liquid containg hydrogen peroxide is supplied to both the surface and the rear of a wafer W; a contamination of an organic substance on both the surface and the rear of the wafer W is oxidized and decomposed by using hydrogen peroxide. Then, while pure water as the cleaning liquid is being supplied to both the surface and the rear of the wafer W, both the surface and the rear of the wafer W is wiped and cleaned by actuating wiping materials 1, 2 composed of porous materials or the like; mainly a large particle is cleaned and removed. Then, while an ultrasonic vibration is being applied, pure water as the cleaning liquid or pure water containing ozone is supplied to both the surface and the rear of the wafer W and an ultrasonic cleaning operation is executed; also a fine particle is cleaned and removed. By this setup, the fine particle is stripped off from the substrate effectively; it is cleaned and removed.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、液晶用ガラス基板や半導体基板などの各種基
板の洗浄方法に関し、詳しくは、洗浄液を供給しながら
払拭部材を作用させて基板の外表面を洗浄する払拭洗浄
工程と、超音波振動を付与しながら洗浄液を作用させて
前記基板の外表面を洗浄する超音波洗浄工程とを含む基
板洗浄方法に関する。
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method for cleaning various substrates such as liquid crystal glass substrates and semiconductor substrates. The present invention relates to a substrate cleaning method including a wiping cleaning step of cleaning the outer surface and an ultrasonic cleaning step of applying a cleaning liquid while applying ultrasonic vibration to clean the outer surface of the substrate.

〈従来の技術〉 従来の基板洗浄方法としては、次のものが知られている
<Prior Art> The following methods are known as conventional substrate cleaning methods.

(A)第1従来例 特開昭57−119347号公報に開示されているよう
に、ガーゼあるいはナイロンブラシで洗剤を使用しなが
らこすり洗いする機械的洗浄方法、フェノール系のレジ
スト剥離液、アセトン、トリクロールエチレン、硝酸、
硫酸などを連続的に用いたり蒸気洗浄に用いたりして洗
浄する化学的洗浄方法、超音波を発生する容器にアセト
ンあるいはフレオンなどの溶媒を入れ、超音波によって
付着しているゴミを剥離させて洗浄する超音波洗浄方法
、ノズルにより高圧の純水などを噴出して付着している
ゴミを除去するジエントスプレによる洗浄方法のうちの
2つ以上を同時に用いてフォトマスクを洗浄する。
(A) First Conventional Example As disclosed in Japanese Unexamined Patent Publication No. 57-119347, a mechanical cleaning method of scrubbing with gauze or a nylon brush while using a detergent, a phenolic resist stripper, acetone, trichlorethylene, nitric acid,
Chemical cleaning methods involve continuous use of sulfuric acid, etc., or steam cleaning; a solvent such as acetone or Freon is placed in a container that generates ultrasonic waves, and the attached dirt is peeled off by ultrasonic waves. The photomask is cleaned using two or more methods simultaneously: an ultrasonic cleaning method for cleaning, and a dient spray cleaning method for removing attached dust by jetting high-pressure pure water or the like from a nozzle.

(B)第2従来例 特開昭59−19329号公報に開示されているように
、回転している被処理物の被洗浄面に洗浄液を供給しな
がら超音波振動を付与して洗浄する超音波洗浄工程と、
洗浄液を吹き付けながらブラシでこすって洗浄する払拭
洗浄工程と、洗浄液を供給しながら超音波振動を付与し
て洗浄する超音波洗浄工程とにより、基板を洗浄する。
(B) Second Conventional Example As disclosed in Japanese Unexamined Patent Application Publication No. 59-19329, an ultrasonic cleaner that cleans by applying ultrasonic vibration while supplying a cleaning liquid to the surface of a rotating workpiece to be cleaned. a sonic cleaning process;
The substrate is cleaned by a wiping cleaning process in which the substrate is scrubbed with a brush while spraying a cleaning liquid, and an ultrasonic cleaning process in which cleaning is performed by applying ultrasonic vibration while supplying the cleaning liquid.

〈発明が解決しようとする問題点〉 しかしながら、上記第1および第2従来例のいずれの洗
浄方法においても、基板の外表面に付着した粒径が2μ
翔以上の粒子は良好に除去できるものの、粒径が2μ−
未満の粒子は効果的に除去できず、洗浄処理後にあって
も基板に残存付着したままになり、例えば、フォトエツ
チングによる加工を行うときに、残存付着した微細粒子
がフォトレジスト膜に入り込んで品質低下や製品不良を
発生するとか、また、配線を形成する場合に、配線間に
短絡や断線を生じたりするといった欠点があった。
<Problems to be Solved by the Invention> However, in both of the cleaning methods of the first and second conventional examples, the particle size attached to the outer surface of the substrate is 2 μm.
Although particles larger than 100 yen can be removed well, particles with a particle size of 2 μ-
Particles smaller than 100% cannot be effectively removed and remain attached to the substrate even after cleaning. For example, during photoetching, the remaining attached fine particles may enter the photoresist film and impair the quality of the photoresist film. There have been drawbacks such as deterioration and product defects, and short circuits and disconnections between wires when forming wires.

本発明は、このような事情に鑑みてなされたものであっ
て、粒径が2μm未満の粒子をも効果的に洗浄除去でき
る方法を提供することを目的とする。
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method that can effectively wash and remove particles having a particle size of less than 2 μm.

く問題点を解決するための手段〉 本発明は、このような目的を達成するために、洗浄液を
供給しながら払拭部材を作用させて基板の外表面を洗浄
する払拭洗浄工程と、この払拭洗浄工程の後に、超音波
振動を付与しながら洗浄液を作用させて前記基板の外表
面を洗浄する超音波洗浄工程とを含む基板洗浄方法にお
いて、前記払拭洗浄工程または前記超音波洗浄工程に先
立って、過酸化水素またはオゾンを含む洗浄液によって
基板の外表面を洗浄する。
Means for Solving the Problems> In order to achieve the above object, the present invention provides a wiping cleaning process in which the outer surface of the substrate is cleaned by operating a wiping member while supplying a cleaning liquid, and this wiping cleaning process. After the step, in a substrate cleaning method including an ultrasonic cleaning step of cleaning the outer surface of the substrate by applying a cleaning liquid while applying ultrasonic vibration, prior to the wiping cleaning step or the ultrasonic cleaning step, Clean the outer surface of the substrate with a cleaning solution containing hydrogen peroxide or ozone.

〈作用〉 上記構成によれば、少なくとも超音波洗浄工程の前には
基板の外表面の有機物等の汚れを、過酸化水素またはオ
ゾンを含む洗浄液によって酸化分解し、粒子を基板から
離脱しやすい状態にしてお(から、超音波洗浄工程にお
いて、超音波撮動を付与して基板の外表面に付着した微
粒子に振動が与えられると、かかる微粒子は効果的に基
板から剥離して洗浄除去される。なお、払拭洗浄工程は
過酸化水素またはオゾンを含む洗浄液によって洗浄する
前または後に行われるのであるが、その前後どちらであ
ろうとも、大きな粒子は払拭洗浄工程の際に洗浄除去さ
れる。
<Operation> According to the above configuration, at least before the ultrasonic cleaning process, dirt such as organic matter on the outer surface of the substrate is oxidized and decomposed by a cleaning solution containing hydrogen peroxide or ozone, and particles are easily separated from the substrate. (Since, in the ultrasonic cleaning process, when ultrasonic imaging is applied to vibrate the fine particles attached to the outer surface of the substrate, the fine particles are effectively peeled off from the substrate and cleaned and removed. Note that the wiping cleaning process is performed before or after cleaning with a cleaning solution containing hydrogen peroxide or ozone, and large particles are washed away during the wiping cleaning process, regardless of whether it is before or after the cleaning.

〈実施例〉 次に、本発明の実施例を図面に基づいて詳細に説明する
<Example> Next, an example of the present invention will be described in detail based on the drawings.

く第1実施例〉 第1図は、本発明方法を実施する基板洗浄装置の第1実
施例の概略縦断面図である。
First Embodiment> FIG. 1 is a schematic vertical sectional view of a first embodiment of a substrate cleaning apparatus that implements the method of the present invention.

この図において、Lはローダであり、カセットCI内に
多段に収容された基板としてのウェハWを取り出して供
給するようになっている。
In this figure, L is a loader, which takes out and supplies wafers W as substrates housed in multiple stages in a cassette CI.

ULはアンローダであり、洗浄処理後のウェハWを送り
受けて、カセットC!内に多段に収容していくようにな
っている。
UL is an unloader that sends and receives wafers W after cleaning processing, and cassette C! It is designed to be housed in multiple stages inside.

前記ローダLとアンローダULとの間に、過酸化水素ま
たはオゾンを含む洗浄液によってウェハWの表裏両面を
洗浄する第1処理ユニツトP1、洗浄液を供給しながら
払拭部材1.2を作用させてウェハWの表裏両面を払拭
洗浄する第2処理ユニン)P2、および、超音波振動を
付与しながら洗浄液を作用させてウェハWの表裏両面を
超音波洗浄する第3処理ユニツトP3が直列的に設けら
れ、そして、ローダLと第1処理ユニツトP1、第1処
理ユニツトP1と第2処理ユニツトP2、第2処理ユニ
ントP2と第3処理ユニツ)P3、および、第3処理ユ
ニツトP3とアンローダULそれぞれの間に、ウェハ搬
送手段TI、T2.T3、T4が設けられ、基板洗浄装
置が構成されている。
Between the loader L and the unloader UL, there is a first processing unit P1 that cleans both the front and back surfaces of the wafer W with a cleaning liquid containing hydrogen peroxide or ozone, and a wiping member 1.2 acts on the wafer W while supplying the cleaning liquid. A second processing unit P2 for wiping and cleaning both the front and back sides of the wafer W, and a third processing unit P3 for ultrasonically cleaning both the front and back sides of the wafer W by applying a cleaning liquid while applying ultrasonic vibrations are provided in series, Then, between the loader L and the first processing unit P1, between the first processing unit P1 and the second processing unit P2, between the second processing unit P2 and the third processing unit P3, and between the third processing unit P3 and the unloader UL. , wafer transport means TI, T2. T3 and T4 are provided to constitute a substrate cleaning apparatus.

本発明方法では、上記基板洗浄装置を使用し、ウェハW
を搬送しながら、次の工程を順に経て、ウェハWの表裏
両面を洗浄処理し、付着した粒子を除去するものであり
、次に詳述する。
In the method of the present invention, the above-mentioned substrate cleaning apparatus is used to clean the wafer W.
While transporting the wafer W, the following steps are sequentially performed to clean both the front and back surfaces of the wafer W to remove attached particles, which will be described in detail below.

■洗浄工程 ウェハWの表裏両面に、過酸化水素を含む洗浄液として
、アンモニアと過酸化水素と純水とを1:1:8の重量
比で混合したアンモニア過酸化水素溶液を供給し、ウェ
ハWの表裏両面の有機物等の汚れを過酸化水素によって
酸化分解する。必要により、純水を高圧でスプレー処理
する工程を付加しても良い。この工程における洗浄液と
して、アンモニアの代わりに硫酸を用いた硫酸過酸化水
素溶液またはオゾンを含む純水を使用しても良い。
■ Cleaning process An ammonia-hydrogen peroxide solution containing ammonia, hydrogen peroxide, and pure water mixed in a weight ratio of 1:1:8 is supplied as a cleaning solution containing hydrogen peroxide to both the front and back surfaces of the wafer W. Hydrogen peroxide oxidizes and decomposes dirt such as organic matter on both the front and back sides of the paper. If necessary, a step of spraying pure water at high pressure may be added. As the cleaning liquid in this step, a sulfuric acid hydrogen peroxide solution using sulfuric acid instead of ammonia or pure water containing ozone may be used.

また、この洗浄液としてオゾンを含む硫酸水溶液を用い
てもよい。
Further, an aqueous sulfuric acid solution containing ozone may be used as the cleaning liquid.

■払拭洗浄工程 ウェハWの表裏両面に洗浄液としての純水を供給しなが
ら、そこに、例えば、ポリビニールアルコール樹脂から
なる多孔質材料等からなる払拭部材1.2を作用させて
ウェハWの表裏両面を払拭洗浄し、主として大きな粒子
を洗浄除去する。この工程において、純水に代えて前述
したアンモニア過酸化水素溶液またはオゾンを含む純水
を洗浄液として用いても良い。
■ Wiping cleaning process While supplying pure water as a cleaning liquid to both the front and back surfaces of the wafer W, a wiping member 1.2 made of a porous material such as polyvinyl alcohol resin is applied thereto. Wipe and clean both sides to mainly remove large particles. In this step, the aforementioned ammonia hydrogen peroxide solution or ozone-containing pure water may be used as the cleaning liquid instead of pure water.

■超音波洗浄工程 超音波振動を付与しながら、洗浄液としての純水または
オゾンを含む純水、あるいはアンモニア過酸化水素溶液
をウェハWの表裏両面に供給して超音波洗浄し、微粒子
をも洗浄除去する。
■Ultrasonic cleaning process Ultrasonic cleaning is performed by supplying pure water, ozone-containing pure water, or ammonia-hydrogen peroxide solution as a cleaning liquid to both the front and back surfaces of the wafer W while applying ultrasonic vibrations, thereby cleaning fine particles as well. Remove.

この後、純水供給によりウェハWの表裏両面を洗浄し、
更に、純水供給を停止した状態でウェハWを高速回転し
て液切り乾燥を行い、その乾燥処理後においてウェハW
を取り出し、アンローダULのカセットC2内に収納す
る。
After that, both the front and back sides of the wafer W are cleaned by supplying pure water,
Furthermore, with the pure water supply stopped, the wafer W is rotated at high speed to perform draining drying, and after the drying process, the wafer W is
is taken out and stored in the cassette C2 of the unloader UL.

上記処理において、乾燥処理後に、再度、洗浄工程に戻
し、一連の洗浄処理を2回以上繰り返して洗浄効果をよ
り一層高めることができるようにしても良い。
In the above treatment, after the drying treatment, the cleaning step may be performed again, and the series of cleaning treatments may be repeated two or more times to further enhance the cleaning effect.

次に、基板洗浄装置を構成する各部について説明する。Next, each part constituting the substrate cleaning apparatus will be explained.

前記ローダLには、図示しないが、カセットCIを上下
動するエレベータが配設され、光センサーなどにより、
カセットC1の高さを検出し、カセットC1の所定箇所
を搬送高さに位置させ、カセットC1内に収容された最
下位のウェハWから取り出していくように構成されてい
る。
Although not shown, the loader L is provided with an elevator that moves the cassette CI up and down, and is equipped with an elevator that moves the cassette CI up and down.
The height of the cassette C1 is detected, a predetermined portion of the cassette C1 is positioned at the transport height, and the lowest wafer W accommodated in the cassette C1 is taken out.

また、アンローダULにおいても、図示しないが、カセ
ットC2を上下動するエレベータが配設され、光センサ
ーなどにより、カセットC2の高さを検出し、カセット
C2の所定箇所を搬送高さに位置させ、洗浄処理後のウ
ェハWを、カセットC2内の最上位から収容していくよ
うに構成されている。
Although not shown, the unloader UL is also provided with an elevator that moves the cassette C2 up and down, detects the height of the cassette C2 using an optical sensor, etc., and positions a predetermined location of the cassette C2 at the transport height. The cassette C2 is configured to accommodate the wafers W after the cleaning process from the top inside the cassette C2.

前記ウェハ搬送手段Tl、T2.T3.T4それぞれと
しては、電動°モータなどの回転駆動手段により鉛直軸
芯周りで駆動回転自在に第1アームを設けるとともに、
その第1アームの先端に第2アームを鉛直軸芯周りで回
転自在に連結し、第1アームの回転運動を回転伝達機構
によって第2アームに伝達し、第2アームの先端にウェ
ハWを載置して吸着し、水平方向に変位してウェハWを
搬送するように構成したもの(実開昭60−17654
8号公報参照)など、各種の手段が採用される。
The wafer transport means Tl, T2. T3. Each T4 is provided with a first arm that can be freely driven and rotated around the vertical axis by a rotational drive means such as an electric motor, and
A second arm is connected to the tip of the first arm so as to be rotatable around the vertical axis, the rotational movement of the first arm is transmitted to the second arm by a rotation transmission mechanism, and the wafer W is placed on the tip of the second arm. A device configured to place the wafer W by suction and move it in the horizontal direction to transport the wafer W (Utility Model No. 60-17654)
Various means are adopted, such as (see Publication No. 8).

第1処理ユニツトP1には、電動モータなどによって鉛
直軸芯周りで駆動回転される回転部材3が設けられ、そ
の回転部材3はその回転軸の上端に放射状に複数個延設
された部材であって、それぞれの先端側に挟持爪4が設
けられ、それら挟持爪4・・・のうちの所定のものが、
対向する挟持爪4に対して水平方向で遠近する方向に変
位可能に構成され、対向する挟持爪4,4の間隔を大に
した状態で、その間にウェハWを入れ込み、一方、対向
する挟持爪4.4の間隔を小にすることにより、入れ込
んだウェハWを挟持爪4・・・によって挟持するように
構成されている。
The first processing unit P1 is provided with a rotating member 3 driven and rotated around a vertical axis by an electric motor or the like, and the rotating member 3 is a plurality of members extending radially from the upper end of the rotating shaft. A clamping claw 4 is provided on the tip side of each of the clamping claws 4, and a predetermined one of the clamping claws 4...
It is configured to be movable horizontally toward and away from the opposing clamping claws 4, and the wafer W is inserted between the opposing clamping claws 4 with a large gap between them, while the opposing clamping claws By making the interval 4.4 small, the inserted wafer W is held between the holding claws 4 .

回転部材3の上下それぞれには、洗浄液噴射用のノズル
5.5が設けられ、ウェハWを駆動回転しながら、その
表裏両面それぞれに前述したアンモニア過酸化水素溶液
などの洗浄液を噴射供給するように構成されている。
A nozzle 5.5 for spraying a cleaning liquid is provided on each of the upper and lower sides of the rotating member 3, and while the wafer W is driven and rotated, a cleaning liquid such as the above-mentioned ammonia-hydrogen peroxide solution is sprayed onto each of the front and back surfaces of the wafer W. It is configured.

第2処理ユニツ)P2には、ウェハWの搬送経路の上下
それぞれに、電動モータなどによって鉛直軸芯周りで互
いに逆方向に駆動回転自在に台盤6.6が設けられると
ともに、その台盤6.6それぞれにスポンジ状の払拭部
材1.2が設けられている。
In the second processing unit) P2, base plates 6.6 are provided on the upper and lower sides of the wafer W transport path, respectively, and are rotatably driven by electric motors in opposite directions around the vertical axis. .6 each is provided with a sponge-like wiping member 1.2.

そして、台盤6.6それぞれの支軸6aに洗浄液の供給
路Rが形成され、その供給路R,Rを通じて洗浄液を交
互に供給し、洗浄液の供給されていない方の払拭部材1
または2によってウェハWを保持しながら、ウェハWの
表裏両面を交互に洗浄するように構成されている。
A cleaning liquid supply path R is formed on each support shaft 6a of the base plate 6.6, and the cleaning liquid is alternately supplied through the supply paths R and R to the wiping member 1 to which the cleaning liquid is not supplied.
or 2, while holding the wafer W, the front and back surfaces of the wafer W are alternately cleaned.

第3処理ユニツトP3には、第1処理ユニツトP1と同
一構成の回転部材7および挟持爪8・・・が設けられ、
その回転部材7の上下それぞれに洗浄液噴射用のノズル
9,9が設けられるとともに、その洗浄液噴射用のノズ
ル9.9それぞれに超音波振動子10が付設されており
、ウェハWを駆動回転しながら、その表裏両面それぞれ
に、超音波振動を付与した洗浄液を噴射供給して洗浄す
るように構成されている。洗浄液は、ウェハWの表裏両
面に同時に供給するものでも、交互に供給するものでも
良い。超音波振動子10で発生する超音波の振動数とし
ては、微細な粒子を洗浄除去するうえで、800KHz
以上にするのが好ましい。
The third processing unit P3 is provided with a rotating member 7 and clamping claws 8 having the same configuration as the first processing unit P1.
Nozzles 9, 9 for spraying cleaning liquid are provided on the upper and lower sides of the rotating member 7, respectively, and an ultrasonic vibrator 10 is attached to each of the nozzles 9, 9 for spraying the cleaning liquid. , is configured to spray and supply a cleaning liquid to which ultrasonic vibrations have been applied to each of the front and back surfaces for cleaning. The cleaning liquid may be supplied to both the front and back surfaces of the wafer W at the same time, or may be supplied alternately. The frequency of the ultrasonic waves generated by the ultrasonic vibrator 10 is 800 KHz, which is suitable for cleaning and removing fine particles.
It is preferable to do the above.

次に、上記第1実施例の基板洗浄装置を用いて行った実
験結果について説明する。
Next, the results of an experiment conducted using the substrate cleaning apparatus of the first embodiment will be explained.

第3処理ユニツトP3における超音波振動子10の周波
数を800KH2に設定し、そして、一連の洗浄処理を
1回だけ行い、処理前(Aで示す)、第2処理ユニッ1
−P2での処理後(Bで示す)、および、第3処理ユニ
ッ1−P3での処理後(Cで示す)それぞれにおいて、
ウェハWに付着した塵埃粒子の数を0.2〜0.3 t
tm  (1’) 、0.3〜0.4am (I[) 
、0.4〜2.0 pm (III) 、2.0 am
以上(rV)の粒径別に計測するとともに、その総粒子
数(V)を求めたところ、次表、ならびに、第2図の片
対数グラフそれぞれに示すような結果が得られた。
The frequency of the ultrasonic transducer 10 in the third processing unit P3 is set to 800KH2, and a series of cleaning processes is performed only once, and before the processing (indicated by A), the second processing unit 1
- After the processing in P2 (indicated by B) and after the processing in the third processing unit 1-P3 (indicated by C),
The number of dust particles attached to the wafer W is 0.2 to 0.3 t.
tm (1'), 0.3~0.4am (I[)
, 0.4-2.0 pm (III), 2.0 am
When measuring each particle size (rV) and determining the total number of particles (V), results were obtained as shown in the following table and the semi-logarithm graph in FIG. 2.

(以下、余白) 以上の結果から、第2図のグラフで示されるように、払
拭洗浄工程を経ることにより、粒径が2μm以上の粒子
は90%除去できるものの、2μm未満の粒子では、除
去される数が極めて少ないことが明らかである。
(Hereinafter, blank space) From the above results, as shown in the graph of Figure 2, 90% of particles with a particle size of 2 μm or more can be removed through the wiping and cleaning process, but particles with a particle size of less than 2 μm can be removed. It is clear that the number of such cases is extremely small.

しかしながら、過酸化水素を含む洗浄液による洗浄を事
前に行っておいた超音波洗浄工程を経ることにより、粒
径が0.2〜0.3μmの粒子であっても80%近い数
の粒子を除去でき、トータル的にも84%と極めて除去
率を高くできていることが明らかであった。
However, by going through an ultrasonic cleaning process that is preceded by cleaning with a cleaning solution containing hydrogen peroxide, nearly 80% of the particles are removed, even if the particle size is 0.2 to 0.3 μm. It was clear that the removal rate was extremely high at 84% in total.

なお、一連の洗浄処理工程を繰り返した場合、上記表に
示された割合に近い状態でウェハWに付着した粒子を除
去できる。
Note that when a series of cleaning steps are repeated, particles attached to the wafer W can be removed at a rate close to that shown in the table above.

く第2実施例〉 第3図は、本発明方法を実施する基板洗浄装置の第2実
施例の概略縦断面図である。
Second Embodiment FIG. 3 is a schematic vertical sectional view of a second embodiment of a substrate cleaning apparatus that implements the method of the present invention.

この第2実施例の基板洗浄装置は、ウェハWを洗浄液中
に浸漬して洗浄処理するものであり、過酸化水素または
オゾンを含む洗浄液中に浸漬してウェハWの表裏両面を
洗浄する第1処理ユニツトPIO1洗浄液中に浸漬しな
がら、回転ブラシで構成される払拭部材1.1.12を
作用させてウェハWの表裏両面を払拭洗浄する第2処理
ユニントP20、超音波振動を付与しながら洗浄液中゛
に浸漬してウェハWの表裏両面を超音波洗浄する第3処
理ユニントP30、および、洗浄処理後のウェハWをエ
アー吹き付けによって乾燥処理する第4処理ユニツトP
40が直列的に設けられ、そして、第1処理ユニツトP
10、第2処理ユニン)P2O、第3処理ユニッ1−P
2O、第4処理ユニツトP40にわたって、正逆転自在
に送りローダ13・・・が設けられて構成されている。
The substrate cleaning apparatus of the second embodiment performs a cleaning process by immersing the wafer W in a cleaning liquid. A second processing unit P20 wipes and cleans both the front and back surfaces of the wafer W by applying a wiping member 1.1.12 consisting of a rotating brush while immersed in the cleaning solution of the processing unit PIO1, and a second processing unit P20 that wipes and cleans both the front and back surfaces of the wafer W while being immersed in the cleaning solution. A third processing unit P30 performs ultrasonic cleaning on both the front and back surfaces of the wafer W by immersing it in the medium, and a fourth processing unit P performs a drying process on the wafer W after the cleaning process by blowing air.
40 are provided in series, and the first processing unit P
10, 2nd processing unit) P2O, 3rd processing unit 1-P
2O and the fourth processing unit P40, a feed loader 13 is provided so as to be able to freely rotate forward and backward.

第1処理ユニツトP10には、浸漬槽14と受槽15が
備えられ、浸漬槽14内の送りローラ13・・・の上下
それぞれにノズル16・・・が並設されるとともに、そ
れらノズル16・・・と受槽15とが、ポンプ17およ
びフィルター18を介装した給液管19を介して連通接
続されている。
The first processing unit P10 is equipped with an immersion tank 14 and a receiving tank 15, and nozzles 16 are arranged in parallel above and below the feed roller 13 in the immersion tank 14, and the nozzles 16... * and the receiving tank 15 are connected to each other via a liquid supply pipe 19 in which a pump 17 and a filter 18 are interposed.

また、浸漬槽14の入口および出口それぞれには、入口
側シャッタ機構20および出口側シャッタ機構21が設
けられるとともに、浸漬槽14に、バルブ22を介装し
た排出管23が連通接続され、かつ、入口および出口そ
れぞれの近くに、ウェハWを検知するウェハ検知センサ
24,25が設けられている。
Further, an inlet-side shutter mechanism 20 and an outlet-side shutter mechanism 21 are provided at the inlet and outlet of the immersion tank 14, respectively, and a discharge pipe 23 having a valve 22 interposed therein is communicatively connected to the immersion tank 14, and Wafer detection sensors 24 and 25 for detecting wafers W are provided near the entrance and exit, respectively.

これにより、初期においては、バルブ22を開いて浸漬
槽14内の洗浄液を受槽15に排出し、入口および出口
それぞれの下端レベルより下方の位置まで洗浄液の量を
減少させておき、その状態で、入口側シャッタ機構20
を開き、ウェハWを浸漬槽14内に搬入する。その後、
ウェハ検知センサ24によりウェハWが浸漬槽14内に
搬入されたことを検知するに伴い、人口側シャッタ機構
20を閉じてからポンプI7を駆動し、送りローラ13
・・・によりウェハWを水平方向に往復駆動移動しなが
ら、ノズル16・・・からアンモニア過酸化水素溶液な
どの過酸化水素またはオゾンを含む洗浄液を噴出供給し
、一定時間の間、洗浄液中に浸漬しなからウェハWの表
裏両面それぞれを洗浄し、ウェハWに付着した有機物等
の汚れを除去する。
As a result, in the initial stage, the valve 22 is opened to discharge the cleaning liquid in the immersion tank 14 to the receiving tank 15, and the amount of cleaning liquid is reduced to a position below the lower end level of each of the inlet and outlet, and in this state, Entrance side shutter mechanism 20
is opened and the wafer W is carried into the dipping tank 14. after that,
When the wafer detection sensor 24 detects that the wafer W has been carried into the immersion tank 14, the artificial side shutter mechanism 20 is closed, the pump I7 is driven, and the feed roller 13 is driven.
While reciprocating the wafer W in the horizontal direction, a cleaning solution containing hydrogen peroxide or ozone, such as an ammonia-hydrogen peroxide solution, is sprayed and supplied from the nozzle 16, and the water is kept in the cleaning solution for a certain period of time. Before immersing the wafer W, both the front and back surfaces of the wafer W are cleaned to remove dirt such as organic matter adhering to the wafer W.

洗浄処理後には、ポンプ17の駆動を停止し、バルブ2
2を開いて浸漬槽14内の洗浄液を受槽15に排出し、
入口および出口それぞれの下端レヘルより下方の位置ま
で洗浄液の量を減少させ、その後に、送りローラ13・
・・によりウェハWを搬出し、そして、ウェハ検知セン
サ25によりウェハWが浸漬槽14内から搬出される状
態にあることを検知するに伴い、出口側シャッタ機構2
1を開き、ウェハWを第2処理二二ン)P2Oに搬送す
る。
After the cleaning process, stop driving the pump 17 and close the valve 2.
2 to drain the cleaning liquid in the immersion tank 14 into the receiving tank 15,
The amount of cleaning liquid is reduced to a position below the lower end level of each of the inlet and outlet, and then the feed rollers 13 and
... carries out the wafer W, and as the wafer detection sensor 25 detects that the wafer W is ready to be carried out from the immersion tank 14, the exit side shutter mechanism 2
1 is opened, and the wafer W is transferred to the second processing (2) P2O.

浸漬槽14の周囲には受樋26が付設され、浸漬槽14
からオーバーフローした洗浄液を受けて受槽15に回収
するように構成されている。
A receiving gutter 26 is attached around the immersion tank 14, and the immersion tank 14
It is configured to receive the cleaning liquid overflowing from the tank 15 and collect it in a receiving tank 15.

第2処理ユニツトP20には、前述の第1処理ユニツト
PLOにおけると同様の浸漬槽27と受槽28が備えら
れ、また、浸漬槽27に、前述同様に、入口側シャッタ
機構29、出口側シャッタ機構30、ウェハ検知センサ
31,32、バルブ33を介装した排出管34、および
、受!35が設けられている。
The second processing unit P20 is equipped with an immersion tank 27 and a receiving tank 28 similar to those in the first processing unit PLO, and the immersion tank 27 has an inlet shutter mechanism 29 and an outlet shutter mechanism as described above. 30, wafer detection sensors 31, 32, a discharge pipe 34 with a valve 33 interposed therein, and a receiver! 35 are provided.

浸漬槽27と受槽28とがポンプ36およびフィルター
37を介装した給液管38を介して連通接続され、そし
て、浸漬槽27内の送りローラ13・・・の上下それぞ
れに回転ブラシによる払拭部材11.12が並設され、
第1処理ユニッI−PIOにおけると同様にして浸漬W
!27内にウェハWを搬入し、送りローラ13・・・に
よりウェハWを水平方向に往復駆動移動しながら、一定
時間の間、洗浄液中に浸漬した状態で払拭部材11.1
2を作用させ、ウェハWの表裏両面それぞれを払拭洗浄
し、ウェハWに付着した、主として、粒径が2μm以上
の粒子を除去する。上記払拭部材11.12としては、
前述第1実施例におけるスポンジ状のものを用いても良
い。
The immersion tank 27 and the receiving tank 28 are connected to each other via a liquid supply pipe 38 having a pump 36 and a filter 37 interposed therebetween, and wiping members using rotating brushes are installed above and below the feed rollers 13 in the immersion tank 27, respectively. 11.12 are installed in parallel,
Immersion W in the same manner as in the first processing unit I-PIO
! The wiping member 11.1 carries the wafer W into the cleaning solution 27, and while the wafer W is reciprocated in the horizontal direction by the feed rollers 13, the wafer W is immersed in the cleaning liquid for a certain period of time.
2 is applied to wipe and clean both the front and back surfaces of the wafer W, and mainly particles having a particle size of 2 μm or more adhering to the wafer W are removed. The above-mentioned wiping member 11.12 includes:
The sponge-like material used in the first embodiment may also be used.

第3処理ユニツトP30には、前述の第2処理ユニッ1
−P2Oにおけると同様の浸漬槽39と受槽40が備え
られ、また、浸漬槽39に、前述同様に、人口側シャン
ク機構41、出口側シャンク機構42、ウェハ検知セン
サ43,44、バルブ45を介装した排出管46、ポン
プ47およびフィルター48を介装した給液管49、な
らびに、受樋50が設けられている。
The third processing unit P30 includes the second processing unit 1 described above.
- An immersion tank 39 and a receiving tank 40 similar to those in P2O are provided, and the immersion tank 39 is connected via an artificial side shank mechanism 41, an outlet side shank mechanism 42, wafer detection sensors 43, 44, and a valve 45, as described above. A discharge pipe 46, a liquid supply pipe 49 with a pump 47 and a filter 48 interposed therebetween, and a receiving gutter 50 are provided.

浸漬槽39内の送りローラ13・・・の上下それぞれに
超音波発振子51.52が設けられ、第1処理ユニツ)
PLOにおけると同様にして浸漬槽39内にウェハWを
搬入し、送りローラ13・・・によリウエハWを水平方
向に往復駆動移動しながら、一定時間の間、洗浄液に超
音波振動を与えてウェハWの表裏両面それぞれを超音波
洗浄し、ウェハWに付着した粒径が2μm未満の粒子ま
でをも除去する。
Ultrasonic oscillators 51 and 52 are provided on the upper and lower sides of the feed rollers 13 in the dipping tank 39, respectively.
The wafer W is loaded into the immersion bath 39 in the same manner as in PLO, and the wafer W is reciprocated in the horizontal direction by the feed rollers 13 while applying ultrasonic vibration to the cleaning liquid for a certain period of time. Both the front and back surfaces of the wafer W are subjected to ultrasonic cleaning to remove even particles with a particle diameter of less than 2 μm attached to the wafer W.

第4処理ユニツトP40には、送PJローラ13・・・
の上下それぞれに位置させてエアーナイフ53゜54が
設けられるとともに、そのエアーナイフ53.54に吸
気ファン55が連通接続され、送りローラ13・・・に
よって搬送されるウェハWの表裏両面にエアーを吹き付
け、洗浄処理後のウェハWを乾燥するようになっている
。この乾燥処理としては、例えば、第1実施例の第1処
理ユニツトPIや第3処理ユニツトP3の回転保持構成
を採用し、その遠心力による波切りによって乾燥するよ
うにしても良い。
The fourth processing unit P40 includes feed PJ rollers 13...
Air knives 53 and 54 are provided above and below, respectively, and an intake fan 55 is connected in communication with the air knives 53 and 54 to supply air to both the front and back sides of the wafer W being transported by the feed rollers 13. The wafer W after the spraying and cleaning process is dried. For this drying process, for example, the rotation holding structure of the first processing unit PI and the third processing unit P3 of the first embodiment may be adopted, and the drying may be carried out by cutting waves due to the centrifugal force.

前記送りローラ13・・・それぞれは、第4図の要部の
概略横断面図に示すように、ウェハWの移送方向に直交
する方向で対向する側壁55.55それぞれに片持ち状
態で軸架され、その送りローラ13にウェハWの載置位
置を規制するフランジ56が連接され、ウェハWの幅方
向の両側縁それぞれを載置して搬送するように構成され
ている。
As shown in the schematic cross-sectional view of the main part of FIG. A flange 56 for regulating the placement position of the wafer W is connected to the feed roller 13, and the wafer W is configured to be placed on both sides of the wafer W in the width direction and transported.

ウェハWを搬送する構成としては、例えば、ウェハWの
表裏両面それぞれから洗浄液を噴射供給するノズルに方
向性を持たせ、その洗浄液の噴射力によって非接触式の
搬送を行うようにしても良い。
As a configuration for transporting the wafer W, for example, a nozzle that sprays a cleaning liquid from both the front and back surfaces of the wafer W may have directionality, and non-contact transport may be performed using the jetting force of the cleaning liquid.

上記実施例では、払拭洗浄工程に先立って、過酸化水素
またはオゾンを含む洗浄液により洗浄しているが、本発
明としては、払拭洗浄工程の後で、超音波洗浄工程に先
立って、過酸化水素またはオゾンを含む洗浄液により洗
浄するようにしても良い。
In the above embodiment, cleaning is performed using a cleaning solution containing hydrogen peroxide or ozone prior to the wiping cleaning process, but in the present invention, after the wiping cleaning process and prior to the ultrasonic cleaning process, hydrogen peroxide is used. Alternatively, cleaning may be performed using a cleaning liquid containing ozone.

また、上記実施例では、過酸化水素またはオゾンを含む
洗浄液による洗浄のために、専用の第1処理ユニツトP
lを設けているが、その第1処理ユニツトP1を無くし
、例えば、第2処理ユニツトP2または第3処理ユニツ
トP3を利用し、その初期において、過酸化水素または
オゾンを含む洗浄液による洗浄を行うようにしても良い
。なお、オゾンを洗浄液に含ませるには、洗浄液にオゾ
ンを泡立てておけばよい。
Further, in the above embodiment, a dedicated first processing unit P is used for cleaning with a cleaning liquid containing hydrogen peroxide or ozone.
1, but the first processing unit P1 is eliminated and, for example, the second processing unit P2 or the third processing unit P3 is used to perform cleaning with a cleaning solution containing hydrogen peroxide or ozone at the initial stage. You can also do it. Note that in order to include ozone in the cleaning liquid, ozone may be bubbled into the cleaning liquid.

〈発明の効果〉 以上説明したように、本発明によれば、粒子が基板の外
表面に付着する大きな要因となっている有機物を過酸化
水素またはオゾンによって酸化分解し、その後において
、微粒子の除去に適した超音波洗浄工程により洗浄する
から、超音波による振動を、基板の外表面から離脱しや
すくなった状態の粒子に作用させることができ、粒径が
2μm以上の大きさの粒子はもちろんのこと、粒径が2
μm未満の大きさの微粒子をも効率良く洗浄除去でき、
残存付着した粒子に起因する品質低下を回避して、歩留
り高く高品質の製品を得ることができる。
<Effects of the Invention> As explained above, according to the present invention, organic matter, which is a major cause of particles adhering to the outer surface of a substrate, is oxidized and decomposed using hydrogen peroxide or ozone, and then fine particles are removed. Since cleaning is performed using an ultrasonic cleaning process suitable for the substrate, ultrasonic vibrations can be applied to particles that are easily detached from the outer surface of the substrate, including particles with a particle size of 2 μm or more. , the particle size is 2
Even fine particles with a size of less than μm can be efficiently washed and removed.
It is possible to avoid quality deterioration caused by residual adhering particles and obtain high-quality products with a high yield.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、本発明に係る基板洗浄方法の実施例を示し、第
1図は、本発明方法を実施する基板洗浄装置の第1実施
例の概略縦断面図、第2図は、洗浄処理に伴う付着粒子
個数の変化と粒子の大きさとの関係を示すグラフ、第3
図は、本発明方法を実施する基板洗浄装置の第2実施例
の概略縦断面図、第4図は、第3図の要部の概略横断面
図である。 1.2,11.12・・・払拭部材 P1.PLO・・・過酸化水素またはオゾンを含む洗浄
を行う第1処理ユニツト P2.P2O・・・払拭洗浄を行う第2処理ユニットP
3.P2O・・・超音波洗浄を行う第3処理ユニント W・・・基板としてのウェハ
The drawings show an embodiment of the substrate cleaning method according to the present invention, FIG. 1 is a schematic vertical cross-sectional view of the first embodiment of the substrate cleaning apparatus that implements the method of the present invention, and FIG. Graph showing the relationship between the change in the number of attached particles and the particle size, 3rd
The figure is a schematic longitudinal cross-sectional view of a second embodiment of a substrate cleaning apparatus that implements the method of the present invention, and FIG. 4 is a schematic cross-sectional view of the main part of FIG. 3. 1.2, 11.12... Wiping member P1. PLO: First processing unit P2. that performs cleaning containing hydrogen peroxide or ozone. P2O...Second processing unit P that performs wiping and cleaning
3. P2O...Third processing unit W that performs ultrasonic cleaning...Wafer as a substrate

Claims (1)

【特許請求の範囲】[Claims] (1)洗浄液を供給しながら払拭部材を作用させて基板
の外表面を洗浄する払拭洗浄工程と、当該払拭洗浄工程
の後に、超音波振動を付与しながら洗浄液を作用させて
前記基板の外表面を洗浄する超音波洗浄工程とを含む基
板洗浄方法において、前記払拭洗浄工程または前記超音
波洗浄工程に先立って、過酸化水素またはオゾンを含む
洗浄液によって基板の外表面を洗浄することを特徴とす
る基板洗浄方法。
(1) A wiping cleaning process in which the outer surface of the substrate is cleaned by applying a wiping member while supplying a cleaning liquid, and after the wiping cleaning process, the outer surface of the substrate is applied with the cleaning liquid while applying ultrasonic vibrations. An ultrasonic cleaning step for cleaning the substrate, the outer surface of the substrate being cleaned with a cleaning solution containing hydrogen peroxide or ozone prior to the wiping cleaning step or the ultrasonic cleaning step. Substrate cleaning method.
JP62300492A 1987-11-27 1987-11-27 Substrate cleaning method Expired - Fee Related JPH0691986B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62300492A JPH0691986B2 (en) 1987-11-27 1987-11-27 Substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62300492A JPH0691986B2 (en) 1987-11-27 1987-11-27 Substrate cleaning method

Publications (2)

Publication Number Publication Date
JPH01140727A true JPH01140727A (en) 1989-06-01
JPH0691986B2 JPH0691986B2 (en) 1994-11-16

Family

ID=17885457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62300492A Expired - Fee Related JPH0691986B2 (en) 1987-11-27 1987-11-27 Substrate cleaning method

Country Status (1)

Country Link
JP (1) JPH0691986B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341729A (en) * 1989-07-07 1991-02-22 Tokyo Electron Ltd Substrate cleaning
JPH0370133A (en) * 1989-08-09 1991-03-26 Shin Etsu Handotai Co Ltd Automatic cleaning device of work
JPH04222677A (en) * 1990-12-21 1992-08-12 Tec:Kk Cleaning machine
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
JPH11307495A (en) * 1998-04-22 1999-11-05 Shin Etsu Handotai Co Ltd Brush cleaning device and work-cleaning system
US6247368B1 (en) 1999-01-04 2001-06-19 International Business Machines Corporation CMP wet application wafer sensor
US6743723B2 (en) 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
KR100426184B1 (en) * 1996-11-29 2004-06-24 캐논 가부시끼가이샤 Method for manufacturing semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434751A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Washing method for silicon wafer
JPS57119347A (en) * 1981-01-17 1982-07-24 Mitsubishi Electric Corp Method and device for washing photomask
JPS5919329A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Cleaning method and device thereof
JPS6092621A (en) * 1983-10-27 1985-05-24 Tasu Gijutsu Kenkyusho:Kk Precision washing method
JPS60153982A (en) * 1984-01-23 1985-08-13 株式会社東芝 Surface washing method
JPS61144830A (en) * 1984-12-19 1986-07-02 Hitachi Ltd Cleaning device
JPS62127742A (en) * 1985-11-28 1987-06-10 Nec Corp Automatic mask cleaning device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434751A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Washing method for silicon wafer
JPS57119347A (en) * 1981-01-17 1982-07-24 Mitsubishi Electric Corp Method and device for washing photomask
JPS5919329A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Cleaning method and device thereof
JPS6092621A (en) * 1983-10-27 1985-05-24 Tasu Gijutsu Kenkyusho:Kk Precision washing method
JPS60153982A (en) * 1984-01-23 1985-08-13 株式会社東芝 Surface washing method
JPS61144830A (en) * 1984-12-19 1986-07-02 Hitachi Ltd Cleaning device
JPS62127742A (en) * 1985-11-28 1987-06-10 Nec Corp Automatic mask cleaning device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341729A (en) * 1989-07-07 1991-02-22 Tokyo Electron Ltd Substrate cleaning
JPH0370133A (en) * 1989-08-09 1991-03-26 Shin Etsu Handotai Co Ltd Automatic cleaning device of work
JPH04222677A (en) * 1990-12-21 1992-08-12 Tec:Kk Cleaning machine
US6743723B2 (en) 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
KR100426184B1 (en) * 1996-11-29 2004-06-24 캐논 가부시끼가이샤 Method for manufacturing semiconductor device
JPH11307495A (en) * 1998-04-22 1999-11-05 Shin Etsu Handotai Co Ltd Brush cleaning device and work-cleaning system
US6247368B1 (en) 1999-01-04 2001-06-19 International Business Machines Corporation CMP wet application wafer sensor

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