JPS5580319A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5580319A
JPS5580319A JP15454178A JP15454178A JPS5580319A JP S5580319 A JPS5580319 A JP S5580319A JP 15454178 A JP15454178 A JP 15454178A JP 15454178 A JP15454178 A JP 15454178A JP S5580319 A JPS5580319 A JP S5580319A
Authority
JP
Japan
Prior art keywords
film
mask
sio
etching
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15454178A
Other languages
Japanese (ja)
Inventor
Kenzo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15454178A priority Critical patent/JPS5580319A/en
Publication of JPS5580319A publication Critical patent/JPS5580319A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To avoid cutout of a wiring film at a step, in etching a polycrystal conductive film provided on a semiconductor substrate by using an insulating-film mask; by cutting the both sides of an insulating film, which has been extended outward by side etching by means of jetting fluid.
CONSTITUTION: An SiO2 film is deposited on an n-type Si substrate 21, and the portions of the regions which will become a source, a drain, and a gate are etched out, and an SiO2 film 22, a polycrystal Si film 23, and SiO2 film 24 are stacked on all over the surface and grown. Then, a photoresist-film mask 25 is provided on the film 24, the unnecessary portion of the film 24 is etched out, and the mask 25 is removed. Only the portion of the film 23 beneath the film 24 is left and the other portion of the film 23 is removed by etching, with the exposed film 24 as a mask. In this constitution, since the film 23 are side etched and the film 24 extends like an eave-shape, extended portions 24a and 24b can be cut out and removed by injecting a high-pressure water from a jet scrubber. Thereafter, a CVD film 26 containing n- type impurities are grown on all over the surface, and an Al wiring film 27 is deposited thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP15454178A 1978-12-12 1978-12-12 Manufacture of semiconductor device Pending JPS5580319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15454178A JPS5580319A (en) 1978-12-12 1978-12-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15454178A JPS5580319A (en) 1978-12-12 1978-12-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5580319A true JPS5580319A (en) 1980-06-17

Family

ID=15586505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15454178A Pending JPS5580319A (en) 1978-12-12 1978-12-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5580319A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144636U (en) * 1985-02-28 1986-09-06
JPS6242458A (en) * 1985-08-19 1987-02-24 Seiko Epson Corp Manufacture of semiconductor device
JPS63109978A (en) * 1986-10-24 1988-05-14 Mitsubishi Electric Corp Manufacturing device for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144636U (en) * 1985-02-28 1986-09-06
JPH0528758Y2 (en) * 1985-02-28 1993-07-23
JPS6242458A (en) * 1985-08-19 1987-02-24 Seiko Epson Corp Manufacture of semiconductor device
JPS63109978A (en) * 1986-10-24 1988-05-14 Mitsubishi Electric Corp Manufacturing device for semiconductor device

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