JPS5553442A - Formation of electrode and wiring layer of semiconductor device - Google Patents

Formation of electrode and wiring layer of semiconductor device

Info

Publication number
JPS5553442A
JPS5553442A JP12704478A JP12704478A JPS5553442A JP S5553442 A JPS5553442 A JP S5553442A JP 12704478 A JP12704478 A JP 12704478A JP 12704478 A JP12704478 A JP 12704478A JP S5553442 A JPS5553442 A JP S5553442A
Authority
JP
Japan
Prior art keywords
layer
pattern
wiring layer
electrode wiring
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12704478A
Other languages
Japanese (ja)
Other versions
JPS594857B2 (en
Inventor
Toshiki Suzuki
Teruhiko Yamazaki
Jun Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12704478A priority Critical patent/JPS594857B2/en
Publication of JPS5553442A publication Critical patent/JPS5553442A/en
Publication of JPS594857B2 publication Critical patent/JPS594857B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain an Al electrode wiring layer with a fine pattern by getting a thin W protective layer adhered to the surface of the Al electrode wiring layer; covering regions other than those specified with photosensitive resin; and removing only the W layer and the Al layer under the resin after plasma-etching.
CONSTITUTION: Making a SiO2 layer 2 grow on Si substrate 1 where an active region 4 has been formed and boring a hole through the region 4, an Al layer 3 is made to stick to the surface including the opening, using the sputtering method. Next the Al layer is covered with a thin protective W layer 5 through the sputtering method, than a pattern 6 composed of photosensitive resin is formed on the layer excluding the opening. Thenceforward, the wafer is treated in a gas plasme etching apparatus so as to remove the layers 5 and 3 under the pattern 6, then the layer 5 out of the remaining layers 5 and 3. The remaining layer 3 is made into an Al electrode wiring layer 3. It is due to reducing substances such as CO produced during decomposition that only the layers under the pattern are removed. The exposed layer 5 is not etched, and the reason for this is that there is WO3 which has an extremely high melting point.
COPYRIGHT: (C)1980,JPO&Japio
JP12704478A 1978-10-16 1978-10-16 Method for forming electrodes and wiring layers of semiconductor devices Expired JPS594857B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12704478A JPS594857B2 (en) 1978-10-16 1978-10-16 Method for forming electrodes and wiring layers of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12704478A JPS594857B2 (en) 1978-10-16 1978-10-16 Method for forming electrodes and wiring layers of semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5553442A true JPS5553442A (en) 1980-04-18
JPS594857B2 JPS594857B2 (en) 1984-02-01

Family

ID=14950222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12704478A Expired JPS594857B2 (en) 1978-10-16 1978-10-16 Method for forming electrodes and wiring layers of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS594857B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063657U (en) * 1992-06-22 1994-01-18 ニッテン株式会社 Seal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177381U (en) * 1987-05-08 1988-11-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063657U (en) * 1992-06-22 1994-01-18 ニッテン株式会社 Seal

Also Published As

Publication number Publication date
JPS594857B2 (en) 1984-02-01

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