KR980005766A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR980005766A
KR980005766A KR1019960026350A KR19960026350A KR980005766A KR 980005766 A KR980005766 A KR 980005766A KR 1019960026350 A KR1019960026350 A KR 1019960026350A KR 19960026350 A KR19960026350 A KR 19960026350A KR 980005766 A KR980005766 A KR 980005766A
Authority
KR
South Korea
Prior art keywords
wafer
spraying
onto
water vapor
water
Prior art date
Application number
KR1019960026350A
Other languages
Korean (ko)
Inventor
박종철
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960026350A priority Critical patent/KR980005766A/en
Publication of KR980005766A publication Critical patent/KR980005766A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 웨이퍼의 세정방법을 개시한다. 개시된 본 발명의 웨이퍼의 세정방법은 챔버내에 웨이퍼를 장잠입시킨 후에 웨이퍼를 수직으로 세워 저속으로 회전시키는 단계; 저속으로 회전되는 웨이퍼의 표면에 순수한 물을 분사하는 단계; 순수한 물이 분사된 웨이퍼의 표면에 수증기를 분사하는 단계; 웨이퍼의 표면에 수증기를 분사하면서, 오존 가스를 수증기와 혼합하여 분사하는 단계; 오존 가스와 수증기를 분사하는 것을 끝낸후에 웨이퍼의 표면에 순수한 물을 분사하는 단계; 및 웨이퍼를 고속으로 회전시키고, 고속 회전하는 웨이퍼의 표면에 N2가스를 분사하는 단계를 포함하는 것을 특징으로 한다.The present invention discloses a cleaning method of a wafer. The cleaning method of a wafer of the present invention includes: a step of vertically standing the wafer at a low speed after a wafer is loaded in a chamber; Spraying pure water onto the surface of the wafer rotated at a low speed; Spraying water vapor onto the surface of the wafer onto which pure water is sprayed; Spraying ozone gas with water vapor while spraying water vapor onto the surface of the wafer; Spraying pure water onto the surface of the wafer after finishing spraying ozone gas and water vapor; And a step of spinning the wafer at a high speed and injecting N 2 gas onto the surface of the wafer rotating at a high speed.

Description

웨이퍼의 세정 방법Cleaning method of wafers

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

도면은 본 발명에 따른 웨이퍼의 세정방법의 동작을 설명하기 위한 세정장치를 개략적으로 나타낸 도면.The drawings schematically show a cleaning apparatus for explaining the operation of a cleaning method of a wafer according to the present invention.

Claims (2)

챔버내에 웨이퍼를 장입시킨후에 웨이퍼를 수직으로 세워 저속으로 회전시키는 단계; 저속으로 회전되는 웨이퍼의 표면에 순수한 물을 분사하는 단계; 순수한 물이 분사된 웨이퍼의 표면에 수증기를 분사하는 단계; 웨이퍼의 표면에 수증기를 분사하면서, 오존 가스를 수증기와 혼합하여 분사하는 단계; 오존 가스와 수증기가 혼합된 오존수의 분사를 끝낸 후에 웨이퍼의 표면에 순수한 물을 분사하는 단계; 및 웨이퍼를 고속으로 회전시키고, 고속 회전하는 웨이퍼의 표면 N2가스를 분사하는 단계를 포함하는 것을 특징으로 하는 웨이퍼의 세정방법.Rotating the wafer vertically and rotating it at a low speed after loading the wafer into the chamber; Spraying pure water onto the surface of the wafer rotated at a low speed; Spraying water vapor onto the surface of the wafer onto which pure water is sprayed; Spraying ozone gas with water vapor while spraying water vapor onto the surface of the wafer; Spraying pure water onto the surface of the wafer after the injection of the ozone water mixed with the ozone gas and the water vapor is finished; And a step of rotating the wafer at a high speed and injecting a surface N 2 gas of the wafer rotating at a high speed. 제1항에 있어서, 상기 오존가스와 수증기가 혼합된 오존수의 분사는 수증기 분사하고, 2초후에 오존 가스를 수증기와 혼합하여 분사하는 것을 특징으로 하는 웨이퍼 세정방법.The method of cleaning a wafer according to claim 1, wherein the spraying of the ozone water mixed with the ozone gas and the steam is sprayed with water vapor, and the ozone gas is mixed with water vapor and sprayed after 2 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960026350A 1996-06-29 1996-06-29 Wafer cleaning method KR980005766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960026350A KR980005766A (en) 1996-06-29 1996-06-29 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960026350A KR980005766A (en) 1996-06-29 1996-06-29 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR980005766A true KR980005766A (en) 1998-03-30

Family

ID=66241520

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960026350A KR980005766A (en) 1996-06-29 1996-06-29 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR980005766A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100467016B1 (en) * 2002-05-30 2005-01-24 삼성전자주식회사 Method of cleaning semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100467016B1 (en) * 2002-05-30 2005-01-24 삼성전자주식회사 Method of cleaning semiconductor substrate
US7318870B2 (en) 2002-05-30 2008-01-15 Samsung Electronics Co., Ltd. Method of cleaning semiconductor substrate

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