KR101225923B1 - Mixed semiconductor cleaning apparatus - Google Patents

Abstract

The present invention provides a hybrid semiconductor cleaning apparatus. The hybrid semiconductor cleaning apparatus may include: a standby part in which wafers in which multiple layers are formed are waiting; Dry chambers for cleaning the wafer under vacuum by different etching methods and wet chambers for cleaning the wafer under normal pressure by selectively receiving any one of a cleaning chemical and a mixed cleaning material of the cleaning liquid and the cleaning gas are disposed. With the government; A transfer unit which receives an electrical signal from the outside and sequentially transfers wafers waiting in the standby unit to the wet chambers and the dry chambers; A cleaning control module for selectively supplying cleaning material of the wet chamber, selecting any one of the wet chambers, and selecting any one of the dry chambers according to a job file set up; And a buffer unit configured to form a vacuum state or an atmospheric pressure state of the cleaning unit and the transfer unit as the wet chambers or the dry chambers are selected. Therefore, the present invention can achieve an atmospheric pressure atmosphere during the wet cleaning in the transfer unit and the buffer unit, and achieve a vacuum atmosphere during the dry cleaning. Thus, the present invention allows the wafer to be wet and dry cleaned sequentially in one device.

Description

Mixed semiconductor cleaning device {MIXED SEMICONDUCTOR CLEANING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor cleaning apparatus, and more particularly, to a hybrid semiconductor cleaning apparatus capable of sequentially performing wet and dry cleaning of a wafer in one apparatus.

In general, a semiconductor device is manufactured by performing a plurality of unit processes such as diffusion, deposition, exposure, cleaning, etc. on a wafer sequentially or repeatedly.

Recently, as semiconductor design rules decrease and pattern density increases, the importance of semiconductor cleaning processes increases.

Here, the semiconductor cleaning process may be divided into wet cleaning and dry cleaning.

Conventionally, the wet cleaning process has been mainly used to remove foreign substances on the wafer surface in the semiconductor manufacturing process.

This wet cleaning process is difficult to control the amount of use by using the chemical of the liquid, and in the process consisting of a multi-layer (layer) causes the structural deformation of the layers during the cleaning because of the different selectivity in the HF cleaning depending on the characteristics of each layer There is a problem.

In particular, when regions where multiple layers, such as contacts, are present, as shown in FIGS. 1 and 2, are exposed to HF chemicals in a wet cleaning process. Structural deformation occurs due to different etching selectivity of each layer.

In addition, in the case where the above-described multiple layers are treated by dry cleaning such as plasma, as shown in FIG. 1, gas or residues of unreacted substances or by-products in holes or surfaces are shown in FIG. 1. There is a problem that is generated.

Accordingly, in the past, researches to solve the problem of wet cleaning have been steadily progressed, but it is still difficult to replace wet cleaning with other methods. And, the problem of dry cleaning was to solve the problem using equipment using gas, plasma and other light, but when the cleaning is completed, there is a problem that they act as other pollutants by the unreacted substances or by-products by the gas.

In addition, conventionally, after the wet cleaning, in order to perform the dry cleaning, the wafer to be cleaned must move to a state exposed to the outside between the respective cleaning equipments. Accordingly, there is also a problem in that secondary contamination occurs on the surface of the wafer while the wafer moves to the state exposed to the outside during the cleaning process.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to remove foreign substances from the surface of a wafer by using a cleaning material mixed with a chemical liquid or a liquid and a gas in a wafer forming a multilayered layer in a semiconductor manufacturing process. The present invention provides a mixed type semiconductor cleaning apparatus that can solve the problem of HF cleaning caused by conventional wet cleaning by modifying the surface and continuously cleaning the wafer with the same etching selectivity.

Another object of the present invention is to provide a mixed type semiconductor cleaning apparatus capable of preventing wet and dry cleaning in a single apparatus, thereby preventing secondary contamination with time and space on the wafer during cleaning.

In a preferred embodiment, the present invention provides a hybrid semiconductor cleaning device.

The hybrid semiconductor cleaning apparatus may include: a standby part in which wafers in which multiple layers are formed are waiting; Dry chambers for cleaning the wafer under vacuum by different etching methods and wet chambers for cleaning the wafer under normal pressure by selectively receiving any one of a cleaning chemical and a mixed cleaning material of the cleaning liquid and the cleaning gas are disposed. With the government; A transfer unit which receives an electrical signal from the outside and sequentially transfers wafers waiting in the standby unit to the wet chambers and the dry chambers; A cleaning control module for selectively supplying cleaning material of the wet chamber, selecting any one of the wet chambers, and selecting any one of the dry chambers according to a job file set up; And a buffer unit configured to form a vacuum state or an atmospheric pressure state of the cleaning unit and the transfer unit as the wet chambers or the dry chambers are selected.

Here, the cleaning unit is configured in a pair to independently group the dry chambers and the wet chambers, and the transfer unit is configured in a pair to transfer wafers to each of the grouped dry chambers and the wet chambers. Preferably, the buffer unit is provided between the transfer units constituted by the pair.

The buffer unit is preferably provided between the standby unit and the transfer unit.

The transfer part and the buffer part may be connected to a vacuum control device controlled by the cleaning control module, and may be controlled to form an atmospheric pressure atmosphere during wet cleaning and a vacuum atmosphere during dry cleaning by the vacuum control device. desirable.

The cleaning unit may further include a cleaning chemical supply unit supplying the cleaning chemical liquid, a cleaning liquid supply unit supplying the cleaning liquid, a cleaning gas supply unit supplying the cleaning gas, the cleaning chemical liquid supply unit, and the wet chamber. A cleaning chemical liquid supply pipe, a cleaning liquid supply pipe connecting the cleaning liquid supply part and the wet chamber, a cleaning gas supply pipe connecting the cleaning gas supply part and the cleaning liquid supply pipe, and the cleaning control liquid supply pipe, the cleaning control A first open / close valve configured to receive an electrical signal from a module to open and close the cleaning chemical supply pipe, and a second open / close valve installed on the cleaning gas supply pipe and open / close the cleaning gas supply pipe by receiving an electrical signal from the cleaning control module. And installed on the cleaning liquid supply pipe to the cleaning control module. The emitter receives an electrical signal transmission preferably includes a third opening and closing valve for opening and closing the cleaning liquid supply pipe.

The cleaning gas is any one of NH 3, HF anhydrous gas and O 3, and the cleaning liquid is preferably ultrapure water.

In addition, the etching method of the dry chambers is plasma etching, UV etching, laser etching, HF vapor method, it is preferable that a fluorine (F) compound is added to each of the dry chambers.

In addition, each of the wet chambers may include a chamber body, a spin chuck disposed inside the chamber body and rotated at a constant speed, and a seating protrusion protruding from an upper end of the spin chuck and seated on a top surface of the wafer. Equipped.

Here, the spin chuck and the seating protrusion may be formed with a nozzle facing the bottom surface of the wafer, and the nozzle may be connected to an auxiliary cleaning liquid supply pipe branched from the cleaning liquid supply pipe.

Each of the wet chambers removes foreign matter on the surface of the wafer using the cleaning material, forms a hydrophilic or hydrophobic surface treatment film on the wafer surface, and each of the dry chambers includes a wafer on which the surface treatment film is formed. It is preferable to remove the native oxide film by making the etching selectivity equal to the surface.

On the other hand, it is preferable that the said washing part is arrange | positioned so that the said conveyance part may be enclosed.

The cleaning unit may include a disk-shaped first turn table on which the seats on which the wafers are seated and a first turn table connected to a center of the first turn table to receive a signal from the cleaning control module to set a first turn table. And a first motor rotating at intervals, wherein the cleaning unit is connected to a center of the second turn table in which the wet chambers and the dry chambers are disposed, and a signal from the cleaning control module. It is preferable that the second motor for receiving the rotation to rotate the second turn table at a predetermined interval, wherein the transfer unit is disposed between the waiting portion and the cleaning portion.

The present invention has the effect of forming a foreign matter and surface protection film on the wafer surface by selecting a cleaning material of any one of liquid and gas or liquid by the wet cleaning method.

In addition, the present invention has the effect that the back side of the wafer can also proceed in the same apparatus.

In addition, the present invention has the effect that the etching selectivity in the dry cleaning after the removal of only the foreign matter in the wet cleaning in order to solve the problem of HF cleaning generated in the wet cleaning can be the same.

In addition, the present invention by the wet cleaning and dry cleaning in a single device in a continuous time no time delay (no time delay) process, it is possible to prevent secondary contamination over time and space on the wafer during cleaning It works.

1 is a view showing the structural deformation generated in the wafer during the conventional wet etching.
FIG. 2 is another view showing structural deformations generated in a wafer during conventional wet etching.
3 is a view showing a first example of the hybrid semiconductor cleaning apparatus of the present invention.
4 is a view showing a second example of the hybrid semiconductor cleaning apparatus of the present invention.
5 is a view showing a third example of the hybrid semiconductor cleaning apparatus of the present invention.
6 is a view showing the configuration of a wet chamber according to the present invention.
7 is a view showing the configuration of an example of a dry chamber according to the present invention.
8 shows another example of the hybrid semiconductor cleaning apparatus of the present invention.

Hereinafter, the hybrid semiconductor cleaning apparatus of the present invention will be described with reference to the accompanying drawings.

3 shows a first example of the hybrid semiconductor cleaning apparatus of the present invention.

The semiconductor cleaning apparatus includes a standby unit 100, a cleaning unit 201, a transfer unit 600, and a cleaning control module 700.

The waiting part 100 is a chamber in which wafers W are waiting, and each of the wafers W may be stacked in a plurality of popes disposed in the waiting part 100. That is, the waiting part 100 is a space where the wafers W, which are subjected to the cleaning process, are waiting.

The cleaning unit 100 cleans the wafer by selectively supplying one of dry chambers 301 and 302 for cleaning the wafer W in different etching methods, and one of a cleaning chemical liquid and a mixed cleaning material of the cleaning liquid and the cleaning gas. Wet chambers 400 are disposed.

6 shows the configuration of a wet chamber according to the invention.

Referring to Figure 6, it will be described the configuration of the wet chamber 400.

The wet chamber 400 includes a spin chuck 420 and a chamber body 410 having a predetermined space formed therein. The spin chuck 420 is connected to a device such as a rotating motor whose central axis is powered from the outside to rotate at a constant rotational speed, and may be rotated at a constant rotational speed as the rotating motor is rotated.

In addition, a mounting protrusion 430 is formed to protrude from the center of the upper end of the spin chuck 420, and the center of the bottom surface of the wafer W is seated on the upper surface thereof. Therefore, when the spin chuck 420 is rotated while being seated on the seating protrusion 430, the wafer W may be rotated together with the spin chuck 420 at a predetermined rotational speed. Although not shown in the drawings, the seating protrusion 420 may have a plurality of vacuum holes in which a vacuum is formed, so that the bottom surface of the wafer W may be vacuum-adsorbed.

Here, the cleaning unit 201 according to the present invention includes a cleaning chemical supply unit 510 for supplying the cleaning chemicals, a cleaning liquid supply unit 520 for supplying the cleaning liquid, and a cleaning gas supply unit for supplying the cleaning gas ( 530, a cleaning chemical supply pipe 511 connecting the cleaning chemical supply part 510, and the wet chamber 400, and a cleaning liquid supply pipe connecting the cleaning liquid supply part 520 and the wet chamber 400 ( 521, a cleaning gas supply pipe 531 connecting the cleaning gas supply part 530, and the cleaning liquid supply pipe 521, and the cleaning chemical liquid supply pipe 511 to the cleaning control module 700. A first opening / closing valve 512 for opening and closing the cleaning chemical liquid supply pipe 511 and the cleaning gas supply pipe 531 by receiving an electrical signal and receiving an electrical signal from the cleaning control module 700. Cleaning gas supply pipe 531 A second opening / closing valve 532 for opening and closing, and a third opening / closing valve installed on the cleaning liquid supply pipe 521 and receiving an electrical signal from the cleaning control module 700 to open and close the cleaning liquid supply pipe 521. 522 is provided.

Here, a mixer (M) for mixing the cleaning liquid and the cleaning gas is installed at a portion connected to the cleaning liquid supply pipe (521) and the cleaning gas supply pipe (531).

The cleaning gas may be any one of NH 3, HF, and O 3, and the cleaning liquid may be ultrapure water (DIW).

In addition, the cleaning chemical is any one of piranha cleaning chemicals (H2SO4 + H2O2 + DIW (ultra pure water)), SC-1 (standard cleaning-1) cleaning chemicals (NH4OH + H2O2 + ultrapure water), and HF cleaning chemicals (HF + ultrapure water) One may be selected, and their selection may be selected according to the purpose of removing demineralization on the wafer W surface.

Here, preferably, ozone is mixed with ultrapure water instead of the piranha cleaning chemical, and ammonia gas is mixed with ultrapure water instead of SC-1 (standard cleaning-1) cleaning chemical, and HF anhydrous in ultrapure water instead of HF cleaning chemical. Gas may be used, and the above cleaning method may be used in combination with the purpose of removing foreign substances.

In addition, the wet chamber 400 includes an IPA supply pipe 551 through which ultrapure water and IPA (isopropyl alcohol) are mixed, and a nitrogen gas injection pipe 552 through which nitrogen gas is injected.

On the other hand, the upper and lower portions of the wet chamber 400 are kept open, the upper end of the IPA supply pipe 551, the end of the nitrogen gas injection pipe 552, and the cleaning liquid supply pipe 521 The end is located, and each of the ends is provided with a spray nozzle (N).

In addition, a nozzle 431 facing the bottom surface of the wafer W is formed at the spin chuck 420 and the mounting protrusion 430, and the nozzle 431 is branched from the cleaning liquid supply pipe 521. It is connected to the liquid supply pipe 523.

In addition, an end of the cleaning chemical supply pipe 521 is also positioned above the wet chamber 400 and connected to the injection nozzle N.

Therefore, when the first opening / closing valve 512 is opened by the cleaning control module 700, the cleaning chemical liquid may be supplied to the wafer W through the cleaning chemical liquid supply pipe 511. When the second and third open / close valves 522 and 532 are opened by the cleaning control module 700, the cleaning liquid and the cleaning gas, which are ultrapure water, are mixed in the mixer M to form a mixed cleaning material, which is a cleaning liquid supply pipe 521. ) Is injected along the spray nozzle (N) to the upper wafer (W). In addition, the mixed cleaning material is also flowed into the auxiliary cleaning liquid supply pipe 523 which is branched from the cleaning liquid supply pipe 521 and connected to the nozzle 431 of the spin chuck 421, so that the wafer W may flow through the nozzle 431. Sprayed on the bottom. At this time, the nozzle 431 is preferably inclined at an angle so as to be diffused from the center of the wafer (W) toward the bottom edge of the wafer (W).

Accordingly, in the wet chamber 400 according to the present invention, the mixed cleaning material is sprayed onto the upper and lower surfaces of the wafer W at the same time, thereby removing foreign substances on the wafer surface including the rear surface of the wafer W.

In addition, the cleaning control module 700 supplies the IPA and the ultrapure water from the IPA supply unit (not shown) and the ultrapure water supply unit (not shown) to the IPA supply pipe 551, mixes the mixture in the mixer M1, and sprays it onto the wafer W. You can do that. Subsequently, nitrogen gas may be supplied from the nitrogen gas supply unit (not shown) to the nitrogen gas supply pipe 552 to be injected onto the wafer W.

Therefore, the IPA vapor is sprayed onto the surface of the wafer W from which the foreign matter is removed by the mixed cleaning material, and the moisture remaining on the wafer W is replaced to dry. The IPA vapor adsorbed on the wafer W is dried by a natural drying method or an N 2 purge.

The dry chambers 301 and 302 are chambers that independently use plasma etching, UV etching, and laser etching. Thus, the dry chambers 301 and 302 use different etching schemes. Here, the dry chamber 301 using the plasma etching method will be representatively described. In the case of the dry chamber 301, a bottom portion of the chamber 11 in which the gas inlet 12 and the gas exhaust port 13 are formed, respectively; The cathode electrode 16 and the anode electrode 14 are respectively provided at the top. A wafer support 17 configured to be rotatable and inclined by the rotating shaft 18 is installed above the cathode electrode 16, and the wafer support 17 is installed in close contact with the cathode electrode 16. It is sealed by 20. In addition, the anode electrode 14 is supplied with a high frequency power (RF Power) from the high frequency power supply unit 15. In this configuration, when the gas is supplied into the chamber 11 through the gas inlet 12, and the high frequency power is applied to the anode electrode 14 from the high frequency power supply 15, the plasma 19 is turned on. The generated plasma 19 is vertically moved in the direction of the wafer support 17 by the magnetic field. Accordingly, the wafer surface is anisotropically etched by the plasma.

Preferably, the dry cleaning using the dry chamber of the present invention is preferably used in a region in which the structure generated when removing a thin film such as a natural oxide film in the wet cleaning changes.

In the above, an example of the configuration of each of the wet chambers and the drying chambers included in the cleaning unit according to the present invention has been described.

4 shows a second example of the hybrid semiconductor cleaning apparatus of the present invention.

The cleaning unit 202 according to the present invention may be arranged to surround the transfer unit 600, as shown in FIG. 4.

The transfer part 600 includes a robot arm 610 that is rotated and driven by receiving power from the outside, and a seating part 620 that vacuum-adsorbs the wafer W to an end of the robot arm 610.

In this case, a buffer unit 800 is further provided between the transfer unit 600 and the standby unit 100. The buffer unit 800 is a space in which the wafer to be newly cleaned is temporarily waited after the wafer W to be cleaned.

In the first and second examples, the buffer unit 800 is provided between the standby unit 100 and the transfer unit 600. Here, the transfer unit 600 and the buffer unit 800 is connected to a vacuum control device (not shown) controlled by the cleaning control module 700. Therefore, each of the transfer part 600 and the buffer part 800 may be controlled to form an atmospheric pressure atmosphere during wet cleaning by a vacuum control device and a vacuum atmosphere during dry cleaning.

Thus, when wafers move from wet cleaning to dry cleaning or from dry cleaning to wet cleaning, that is, when the wafers move from a vacuum atmosphere to a vacuum atmosphere or from a vacuum atmosphere to a atmospheric pressure atmosphere, the transition time to the vacuum atmosphere can be reduced. In addition, it is possible to effectively prevent the occurrence of contamination by a sudden atmosphere change.

5 shows a third example of the mixed semiconductor cleaning apparatus of the present invention.

As shown in FIG. 5, the cleaning unit 203 according to the present invention includes a disk-shaped first turn table 210 in which seating parts 211 on which wafers W are seated are formed, and the first turn. It may be provided with a first motor (M1) connected to the center of the table 210 to receive a signal from the cleaning control module 700 to rotate the first turn table 210 at a predetermined interval.

In addition, the cleaning unit 203 is connected to the center of the second turn table 220 and the disk-shaped second turn table 220 in which the wet chambers 400 and the dry chambers 301 and 302 are disposed. And a second motor M2 which receives the signal from the cleaning control module 700 and rotates the second turn table 220 at a predetermined interval.

In this case, the transfer part 600 may be disposed between the standby part 100 and the cleaning part 203.

Of course, although not shown in the drawings, in the third example, a buffer unit (not shown) that performs the function as mentioned in the first and second examples is further provided between the standby unit 100 and the transfer unit 600. Can be prepared.

Therefore, the transfer unit 600 and the buffer unit (not shown) are connected to a vacuum control device (not shown) controlled by the cleaning control module 700. Accordingly, each of the transfer part 600 and the buffer part 800 may have an atmospheric pressure atmosphere during wet cleaning, and a vacuum atmosphere during dry cleaning.

Thus, when wafers move from wet cleaning to dry cleaning or from dry cleaning to wet cleaning, that is, when the wafers move from a vacuum atmosphere to a vacuum atmosphere or at atmospheric pressure, it takes a long time due to a sudden atmosphere change. It can prevent and efficiently prevent contamination.

8 shows another example of the mixed semiconductor cleaning apparatus of the present invention.

Referring to Figure 8, the cleaning unit according to the present invention may be configured in a pair. That is, the dry chambers 301 and 302 and the wet chambers 400 may be grouped. Here, the dry chambers 301 may be grouped independently to form the first washing machine 204, and the wet chambers 400 may be independently grouped to form the second washing machine 205.

Here, the transfer unit is also composed of a pair. The first tax unit 204 is connected with the first transfer unit 610, and the second tax unit 205 is connected with the second transfer unit 620.

In addition, the buffer unit 800 is provided between the first and second transfer units 610 and 620. The standby unit 100 is connected to the second transfer unit 620.

Here, the transfer unit 610 and the buffer unit 800 is connected to a vacuum control device controlled by the cleaning control module 700, by the vacuum control device to form an atmospheric pressure atmosphere during the wet cleaning, dry It is controlled so that a vacuum atmosphere is formed during the cleaning.

Accordingly, when the wet chambers 400 are selected to transfer the wafer from the standby unit 100 to the second transfer unit 620 and the wet cleaning process is performed by the cleaning control module, the vacuum control module may transfer the second transfer unit. 620 and the buffer unit 800 is controlled to achieve an atmospheric pressure state.

Subsequently, when the dry chambers 301 and 302 are selected to perform the dry cleaning process by the cleaning control module 700, the vacuum control module may establish a vacuum state between the first transfer unit 610 and the buffer 800. Can be controlled.

Next, the operation of the semiconductor cleaning device configured as described above will be described.

The transfer unit 600 receives an electrical signal from the cleaning control module 700, and unloads any one of the wafers W waiting in the standby unit 100 to set a predetermined wet chamber among the wet chambers 400. Load into the interior of 400. Here, the wafer W forms a multi-layered layer and has an active region such as a contact layer.

In particular, when the cleaning unit 203 is composed of the first and second turn tables 210 and 220, as shown in FIG. 5, the cleaning control module 700 controls the second motor M2 so that the second turn is performed. The second turn table 220 is rotated such that any one of the wet chambers 400 disposed on the table 220 is positioned on the loading path of the wafer W.

In addition, the transfer unit 600 unloads one wafer W from the seating portion 211 of the first turn table 210, and thus, the inside of the wet chamber 400 preset in the cleaning control module 700. That is, it may be seated on the seating protrusion 430 of the spin chuck 420.

In this case, the cleaning control module 700 may be preset with information on whether to use a cleaning chemical liquid or a mixed cleaning material. In the following description, a case of using a mixed cleaning material will be described.

The cleaning control module 700 opens the 2.3 open / close valves 522 and 532. Therefore, the ultrapure water that is the cleaning liquid in the cleaning liquid supply part 520 flows along the cleaning liquid supply pipe 521, and any one of NH 3, HF, and O 3 in the cleaning gas supply part 530 passes through the cleaning gas supply pipe 531. Flows along. Accordingly, the ultrapure water and the gas are mixed in the mixer (M) and then formed of a mixed cleaning material and flow along the cleaning liquid supply pipe (521) through the spray nozzle (N) at the top of the wet chamber (400). ) Is sprayed to the top. At the same time, the mixed cleaning material flows along the cleaning liquid supply pipe 521, and flows along the auxiliary cleaning liquid supply pipe 523 branching therefrom, through the nozzle 431 of the spin chuck 420. Is sprayed on the bottom of the.

At this time, the upper and lower surfaces of the wafer are cleaned by the sprayed mixed cleaning material, and in particular, the mixed cleaning material sprayed from the lower portion of the wafer W is disposed through the nozzle 431 installed obliquely at the spin chuck 420. Since it is injected, foreign matter can be separated outward from the wafer W while being obliquely injected outward from the center of the bottom surface of the wafer W. FIG.

Accordingly, the wafer W transferred to any one of the wet chambers 400 may remove foreign substances from the surface including the top and bottom surfaces thereof.

Subsequently, the cleaning control module 700 may allow ultrapure water and IPA to flow in the IPA supply pipe 551 through the IPA supply unit. In addition, the IPA may be injected onto the wafer W in a state in which the ultrapure water flowing along the ultrapure water supply pipe 553 and the mixer M are mixed with each other.

Subsequently, nitrogen gas may be supplied from the nitrogen gas supply unit to the nitrogen gas supply pipe 552 to be injected onto the wafer W. Therefore, the IPA vapor is sprayed onto the surface of the wafer W from which the foreign matter is removed by the mixed cleaning material, and the moisture remaining on the wafer W is replaced to dry. The IPA vapor adsorbed on the wafer W is dried by a natural drying method or an N 2 purge.

Therefore, after the foreign matter is removed from the inside of the wet chamber 400, the surface of the wafer W is made of a hydrophilic or hydrophobic surface for modification, and a surface protective film is formed for the next process. Can be.

Subsequently, the wafer W on which the surface protective film is formed as described above is unloaded from the wet chamber 400 by the transfer unit 600 and loaded into one of the dry chambers 301 and 302 set in the cleaning control module 700. .

The dry chambers 301 and 302 are chambers to which an etching method of plasma, UV, or laser vision is applied. In the dry chambers 301 and 302 according to the present invention, the dry oxides 301 and 302 may be formed of a natural oxide film on the surface of the wafer W after wet cleaning. Used to remove. At this time, in the dry chambers 301 and 302, a dry cleaning process is performed to achieve the same etching selectivity of 1: 1 so as to prevent deformation of the multilayer structure.

After the dry cleaning process as described above, the wafer W is unloaded by the transfer part 600 to be unloaded into the waiting part, and then transferred to allow the process to proceed later.

Accordingly, the wet cleaning process of the present invention is used for removing foreign matters and surface protection due to the structural deformation of the multilayered layer generated during the conventional wafer wet cleaning, and the wafer W that has been wet cleaned immediately undergoes a dry cleaning to perform a multilayer cleaning. This existing layer can be cleaned without structural modification.

In summary, in the present invention, the surface of the wafer W or the substrate is modified by wet cleaning, followed by dry cleaning to clean the multilayer structure or to remove the native oxide film (slightly etching). In addition, the cleaning control module 700 according to the present invention may control the process so that the unreacted substances and by-products generated by the sequential cleaning process as described above may be removed by wet cleaning. In this case, unreacted materials and by-products may be identified using a separate imaging device (not shown) electrically connected to the cleaning control module 700, and the imaging device may be a wafer that is unloaded after wet and dry cleaning. Acquire image information on the surface of W) and transmit the image information to the cleaning control module 700. The cleaning control module 700 may image the transmitted image information to determine the presence of unreacted substances and by-products. . Therefore, the cleaning control module 700 may control to perform wet cleaning on the wafer W again when unreacted materials and by-products are present.

The semiconductor cleaning apparatus of the present invention having the above-described configuration and action is also adopted in display cleaning processes such as LCD (LCD) and LED (LED) process, including semiconductor cleaning processes in which miniaturization proceeds. Can be.

100: waiting part
201,202,203 204,205: cleaning part
301,302: Dry Chamber
400: wet chamber
600: transfer unit
700: cleaning control module
800: buffer section

Claims (10)

A waiting portion in which wafers in which multilayer layers are formed are waiting;
Dry chambers for cleaning the wafer under vacuum by different etching methods and wet chambers for cleaning the wafer under normal pressure by selectively receiving any one of a cleaning chemical and a mixed cleaning material of the cleaning liquid and the cleaning gas are disposed. government;
A transfer unit which receives an electrical signal from the outside and sequentially transfers wafers waiting in the standby unit to the wet chambers and the dry chambers;
A cleaning control module for selectively supplying cleaning material of the wet chamber, selecting any one of the wet chambers, and selecting any one of the dry chambers according to a job file set up; And
And a buffer unit configured to form a vacuum state or a normal pressure state of the cleaning unit and the transfer unit as the wet chambers or the dry chambers are selected.
The cleaning unit is configured in a pair such that the dry chambers and the wet chambers are independently grouped,
The transfer unit is configured in pairs to transfer wafers to each of the grouped dry chambers and the wet chambers,
The buffer unit is a mixed type semiconductor cleaning device, characterized in that provided between the transfer unit consisting of the pair. delete The method of claim 1,
The buffer unit is a mixed type semiconductor cleaning device, characterized in that provided between the waiting section and the transfer section. The method of claim 3,
The transfer part and the buffer part are connected to a vacuum control device controlled by the cleaning control module, and controlled by the vacuum control device so that an atmospheric pressure atmosphere is formed during wet cleaning and a vacuum atmosphere is formed during dry cleaning. Hybrid semiconductor cleaning apparatus . The method of claim 1,
The cleaning unit may include:
A cleaning chemical liquid supply unit supplying the cleaning chemical liquid, a cleaning liquid supply unit supplying the cleaning liquid, a cleaning gas supply unit supplying the cleaning gas, a cleaning chemical liquid supply pipe connecting the cleaning chemical liquid supply unit and the wet chamber, and A cleaning liquid supply pipe connecting the cleaning liquid supply part and the wet chamber, a cleaning gas supply pipe connecting the cleaning gas supply part and the cleaning liquid supply pipe, and installed on the cleaning chemical liquid supply pipe, and transmit an electrical signal from the cleaning control module. A first opening / closing valve for receiving and opening the cleaning chemical liquid supply pipe, a second opening / closing valve provided on the cleaning gas supply pipe, and receiving an electrical signal from the cleaning control module to open and close the cleaning gas supply pipe, and the cleaning liquid supply pipe. Installed in the power supply, and transmits electrical signals from the cleaning control module. It is provided with a third opening and closing valve for opening and closing the cleaning liquid supply pipe,
The cleaning gas is any one of NH 3, HF and O 3, and the cleaning liquid is ultrapure water. The method of claim 1,
The etching method of the dry chambers is plasma etching, UV etching, laser etching, HF vapor method, and each of the dry chambers is a mixed semiconductor cleaning device, characterized in that the addition of fluorine (F) compound. The method of claim 1,
Each of the wet chambers,
A chamber chuck, a spin chuck disposed inside the chamber body and rotating at a constant speed, and a seating protrusion protruding from an upper end of the spin chuck and seated on a top surface of the bottom surface of the wafer,
The spin chuck and the seating protrusion are formed with a nozzle facing the bottom surface of the wafer,
And the nozzle is connected to an auxiliary cleaning liquid supply pipe branching from the cleaning liquid supply pipe. The method of claim 1,
Each of the wet chambers uses the cleaning material to remove foreign substances on the wafer surface, and forms a hydrophilic or hydrophobic surface treatment film on the wafer surface.
And each of the dry chambers is configured to remove the native oxide film by allowing the etching selectivity to be the same with respect to the wafer surface on which the surface treatment film is formed. The method of claim 1,
The cleaning unit is a mixed type semiconductor cleaning device, characterized in that arranged to surround the conveying unit. The method of claim 1,
The cleaning unit may include a disk-shaped first turn table on which the seats on which the wafers are seated, and a first turn table connected to a center of the first turn table to receive a signal from the cleaning control module, and to set the first turn table at predetermined intervals. Having a first motor to rotate,
The cleaning unit includes a disk-shaped second turn table on which the wet chambers and the dry chambers are disposed, and is connected to a center of the second turn table to receive a signal from the cleaning control module to set the second turn table at regular intervals. Having a second motor to rotate,
And the transfer part is disposed between the standby part and the cleaning part.

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