KR950001950A - Oxide film formation method by hydrophilization of wafer - Google Patents

Oxide film formation method by hydrophilization of wafer Download PDF

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Publication number
KR950001950A
KR950001950A KR1019930012206A KR930012206A KR950001950A KR 950001950 A KR950001950 A KR 950001950A KR 1019930012206 A KR1019930012206 A KR 1019930012206A KR 930012206 A KR930012206 A KR 930012206A KR 950001950 A KR950001950 A KR 950001950A
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KR
South Korea
Prior art keywords
wafer
oxide film
forming
hydrophilizing
wafer surface
Prior art date
Application number
KR1019930012206A
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Korean (ko)
Inventor
신영수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930012206A priority Critical patent/KR950001950A/en
Publication of KR950001950A publication Critical patent/KR950001950A/en

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 웨이퍼의 친수성화에 의한 산화막 형성방법에 있어서, 실리콘 웨이퍼를 고온 순수로 린스(rinse)하면서 세척 용기에 오존을 주입하여 웨이퍼 표면에 매우 얇고 균일한 SiO2박막을 형성하여 웨이퍼 표면을 친수성으로 형성하는 단계와; 웨이퍼를 건조하는 단계를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼의 친수성화에 의한 산화막 형성방법에 관한 것으로, 산화막 형성 공정전에 이루어지는 세척공정에서 실리콘 웨이퍼 표면에 오존을 사용한 SiO2박막을 형성함으로써 웨이퍼를 친수성으로 만들어 이후의 공정시 오염물질 발생을 억제할 수 있어 반도체 소자의 수율을 향상시키는 효과가 있다.In the method of forming an oxide film by hydrophilizing a wafer, an ozone is injected into a washing vessel while rinsing a silicon wafer with high temperature pure water to form a very thin and uniform SiO 2 thin film on the wafer surface to make the wafer surface hydrophilic. Forming to; A method of forming an oxide film by hydrophilizing a wafer, comprising drying the wafer, wherein the wafer is made hydrophilic by forming a SiO 2 thin film using ozone on a silicon wafer surface in a cleaning step before the oxide film forming step. It is possible to suppress the generation of contaminants during the subsequent processes to improve the yield of the semiconductor device.

Description

웨이퍼의 친수성화에 의한 산화막 형성방법Oxide film formation method by hydrophilization of wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 웨이퍼 세정 공정 흐름도이다.2 is a flow chart of a wafer cleaning process in accordance with the present invention.

Claims (2)

웨이퍼의 친수성화에 의한 산화막 형성방법에 있어서, 실리콘 웨이퍼를 고온 순수로 린스(rinse)하면서 세척 용기에 오존을 주입하여 웨이퍼 표면에 매우 얇고 균일한 SiO2박막을 형성하여 웨이퍼 표면을 친수성으로 형성하는 단계와; 웨이퍼를 건조하는 단계를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼의 친수성화에 의한 산화막 형성방법.In the method of forming an oxide film by hydrophilizing a wafer, ozone is injected into a washing vessel while rinsing a silicon wafer with high temperature pure water to form a very thin and uniform SiO 2 thin film on the wafer surface to form the wafer surface as hydrophilic. Steps; A method of forming an oxide film by hydrophilizing a wafer, comprising drying the wafer. 제1항에 있어서, 순수에 의한 린스공정전에 산화막 식각용액 HF 또는 BOE(Buffered Oxide Etchant)로 자연산화막을 식각하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 웨이퍼의 친수성화에 의한 산화막 형성방법.The method of claim 1, further comprising etching the natural oxide film with an oxide etching solution HF or BOE (Buffered Oxide Etchant) prior to the rinsing with pure water. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012206A 1993-06-30 1993-06-30 Oxide film formation method by hydrophilization of wafer KR950001950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012206A KR950001950A (en) 1993-06-30 1993-06-30 Oxide film formation method by hydrophilization of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012206A KR950001950A (en) 1993-06-30 1993-06-30 Oxide film formation method by hydrophilization of wafer

Publications (1)

Publication Number Publication Date
KR950001950A true KR950001950A (en) 1995-01-04

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Application Number Title Priority Date Filing Date
KR1019930012206A KR950001950A (en) 1993-06-30 1993-06-30 Oxide film formation method by hydrophilization of wafer

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KR (1) KR950001950A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030056224A (en) * 2001-12-27 2003-07-04 동부전자 주식회사 a method for cleaning the surface of a wafer
KR100387989B1 (en) * 1995-08-24 2003-09-19 캐논 한바이 가부시키가이샤 Manufacturing method of semiconductor device
KR100442744B1 (en) * 2000-07-27 2004-08-02 실트로닉 아게 Process for the Chemical Treatment of Semiconductor Wafers
KR100869846B1 (en) * 2006-12-28 2008-11-21 주식회사 하이닉스반도체 Cleaning method for semiconductor device and forming method of device isolation layer using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387989B1 (en) * 1995-08-24 2003-09-19 캐논 한바이 가부시키가이샤 Manufacturing method of semiconductor device
KR100442744B1 (en) * 2000-07-27 2004-08-02 실트로닉 아게 Process for the Chemical Treatment of Semiconductor Wafers
KR20030056224A (en) * 2001-12-27 2003-07-04 동부전자 주식회사 a method for cleaning the surface of a wafer
KR100869846B1 (en) * 2006-12-28 2008-11-21 주식회사 하이닉스반도체 Cleaning method for semiconductor device and forming method of device isolation layer using the same

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