KR970030425A - Cleaning Method of Semiconductor Devices - Google Patents

Cleaning Method of Semiconductor Devices Download PDF

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Publication number
KR970030425A
KR970030425A KR1019950043036A KR19950043036A KR970030425A KR 970030425 A KR970030425 A KR 970030425A KR 1019950043036 A KR1019950043036 A KR 1019950043036A KR 19950043036 A KR19950043036 A KR 19950043036A KR 970030425 A KR970030425 A KR 970030425A
Authority
KR
South Korea
Prior art keywords
cleaning
oxide film
hydrogen peroxide
semiconductor device
semiconductor devices
Prior art date
Application number
KR1019950043036A
Other languages
Korean (ko)
Inventor
염상현
정인철
김성철
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950043036A priority Critical patent/KR970030425A/en
Publication of KR970030425A publication Critical patent/KR970030425A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

l. 청구범위에 기재된 발명이 속한 기술분야l. The technical field to which the invention described in the claims belongs

반도체 소자 제조 방법Semiconductor device manufacturing method

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

반도체 소자의 자연산화막을 제거하고 클리닝하는 공정에서 세정 및 드라이가 제대로 수행되지 않아 웨이퍼의 표면에 결합이 생긴다는 문제점을 해결하고자 함.In the process of removing and cleaning the natural oxide film of the semiconductor device, the problem is that the cleaning and drying are not performed properly and thus bonding occurs on the surface of the wafer.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

산화막을 습식식각하는데 사용되는 식각액에 과산화수소를 다량 첨가하여 습식식각을 실시하고 IPA 베이퍼드라이 공정의 드라이 조건을 변경하여 보다 신뢰성 있는 반도체 소자를 형성하고자 함.It is intended to form more reliable semiconductor devices by performing wet etching by adding a large amount of hydrogen peroxide to the etching liquid used for wet etching the oxide film and changing the dry conditions of the IPA vapor dry process.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 소자을 클리닝하는데 이용됨.Used to clean semiconductor devices.

Description

반도체 소자의 클리닝 방법Cleaning Method of Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (3)

반도체 소자의 클리닝 방법에 있어서, 자연산화막이 최상층에 형성된 구조의 반도체 소자를 과산화수소를 첨가한 암모니아 수용액을 이용하여 세정을 실시하는 단계와, 오버 플로우방식으로 순수를 사용하여 린싱을 실시하여 소자 표면의 불순물을 제거하는 단계와, 순수에 대한 과산화수소의 비율이 0.2 보다 크도록 과산화수소를 첨가한 불산 수용액을 식각액으로 이용하여 상기 자연산화막을 습식식각시키는 단계와, 오버 플로우 방식으로 순수를 사용하여 린싱을 수행하는 단계와, 이소프로필 알콜 베이퍼 치환 방식으로 드라이 공정을 수행하는 단계를 포함해서 이루어진 반도체 소자의 클리닝 방법.A method of cleaning a semiconductor device, the method comprising: cleaning a semiconductor device having a structure in which a natural oxide film is formed on an uppermost layer using an aqueous ammonia solution containing hydrogen peroxide; and rinsing with pure water in an overflow method to clean the surface of the device. Removing impurities, wet etching the natural oxide film using an aqueous hydrofluoric acid solution added with hydrogen peroxide such that the ratio of hydrogen peroxide to pure water is greater than 0.2 as an etchant, and rinsing using pure water in an overflow manner. And performing a dry process by isopropyl alcohol vapor substitution. 제1항에 있어서, 주변의 음파발생을 제거한 상태에서 상기 세정 공정을 수행하는 것을 특징으로 하는 반도체 소자의 클리닝 방법.The method of claim 1, wherein the cleaning process is performed in a state where surrounding sound waves are removed. 제1항에 있어서, 상기 드라이 공정은 200℃ 이상의 온도에서 약 240초 이상의 시간동안 수행하는 것을 특징으로 하는 반도체 소자의 클리닝 방법.The method of claim 1, wherein the drying process is performed at a temperature of 200 ° C. or more for about 240 seconds or more.
KR1019950043036A 1995-11-23 1995-11-23 Cleaning Method of Semiconductor Devices KR970030425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950043036A KR970030425A (en) 1995-11-23 1995-11-23 Cleaning Method of Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950043036A KR970030425A (en) 1995-11-23 1995-11-23 Cleaning Method of Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR970030425A true KR970030425A (en) 1997-06-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950043036A KR970030425A (en) 1995-11-23 1995-11-23 Cleaning Method of Semiconductor Devices

Country Status (1)

Country Link
KR (1) KR970030425A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100825965B1 (en) * 2006-09-22 2008-04-29 세메스 주식회사 Substrate cleaning method
KR100865442B1 (en) * 2006-12-21 2008-10-28 동부일렉트로닉스 주식회사 Wafer cleaning method for removing stripe defect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100825965B1 (en) * 2006-09-22 2008-04-29 세메스 주식회사 Substrate cleaning method
KR100865442B1 (en) * 2006-12-21 2008-10-28 동부일렉트로닉스 주식회사 Wafer cleaning method for removing stripe defect

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