KR970003603A - Natural Oxide Removal Method on Semiconductor Wafer - Google Patents
Natural Oxide Removal Method on Semiconductor Wafer Download PDFInfo
- Publication number
- KR970003603A KR970003603A KR1019950019143A KR19950019143A KR970003603A KR 970003603 A KR970003603 A KR 970003603A KR 1019950019143 A KR1019950019143 A KR 1019950019143A KR 19950019143 A KR19950019143 A KR 19950019143A KR 970003603 A KR970003603 A KR 970003603A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- polysilicon
- semiconductor wafer
- residues
- natural oxide
- Prior art date
Links
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- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION
고집적 반도체 소자 제조 방법Highly Integrated Semiconductor Device Manufacturing Method
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
폴리실리콘의 도핑을 실시한 후에 형성되는 자연 산화막을 제거하는 종래의 방법은 불산 용액을 이용하여 습식 식각한 다음 린스하는 공정을 이용해 왔는데, 단차가 있는 부분에는 화학 용액이 충분하게 미치지 못하여 자연 산화막이 완전히 제거되지 않게 되고, 따라서 후속 공정인 폴리실리콘을 식각할때, 잔류물이 발생하게 되며 이와 같은 잔류물로 인해, 브릿지등의 소자 불량을 초래하거나 폴리실리콘 상에 실리사이드층을 형성할때 층간의 접착력을 떨어뜨려 소자의 수율과 신뢰성의 저하를 가져오는 문제점을 해결하고자 함.The conventional method of removing the natural oxide film formed after the polysilicon doping has been a wet etching and rinsing process using hydrofluoric acid solution. When etching polysilicon, which is a subsequent process, residues are generated, and these residues result in device defects such as bridges or adhesion between layers when forming a silicide layer on polysilicon. To solve the problem of lowering the yield and reliability of the device.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
도핑된 폴리실리콘 상에 형성된 자연 산화막을 먼저 CF4가스를 이용한 플라즈마 식각으로 제거한 다음, 고압린스 공정을 이용하므로써, 단차 부분에 잔류해 있는 잔류물 및 무반응물 까지도 제거할 수 있는 반도체 웨이퍼상의 자연 산화막 제거 방법을 제공하고자 함.The native oxide film formed on the doped polysilicon is first removed by plasma etching using CF 4 gas, and then the natural oxide film on the semiconductor wafer capable of removing residues and non-reactants remaining in the stepped portion by using a high pressure rinse process. I want to provide a removal method.
4. 발명의 중요한 용도4. Important uses of the invention
고집적 반도체 소자의 세정 공정에 이용됨.Used in the cleaning process of highly integrated semiconductor devices.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950019143A KR970003603A (en) | 1995-06-30 | 1995-06-30 | Natural Oxide Removal Method on Semiconductor Wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950019143A KR970003603A (en) | 1995-06-30 | 1995-06-30 | Natural Oxide Removal Method on Semiconductor Wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970003603A true KR970003603A (en) | 1997-01-28 |
Family
ID=66526341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950019143A KR970003603A (en) | 1995-06-30 | 1995-06-30 | Natural Oxide Removal Method on Semiconductor Wafer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970003603A (en) |
-
1995
- 1995-06-30 KR KR1019950019143A patent/KR970003603A/en not_active Application Discontinuation
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| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |