KR970023813A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR970023813A
KR970023813A KR1019950036978A KR19950036978A KR970023813A KR 970023813 A KR970023813 A KR 970023813A KR 1019950036978 A KR1019950036978 A KR 1019950036978A KR 19950036978 A KR19950036978 A KR 19950036978A KR 970023813 A KR970023813 A KR 970023813A
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KR
South Korea
Prior art keywords
etching
polysilicon
semiconductor device
device manufacturing
photoresist
Prior art date
Application number
KR1019950036978A
Other languages
Korean (ko)
Inventor
김수곤
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950036978A priority Critical patent/KR970023813A/en
Publication of KR970023813A publication Critical patent/KR970023813A/en

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Abstract

1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자 제조 방법Semiconductor device manufacturing method

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

종래의 방법에 따라 폴리실리콘을 식각하는 공정과 포토레지스트를 제거하는 공정을 분리하여 실시하면 공정 시간도 많이 소요되고 각 공정간의 이동시에 파티클 등에 의한 웨이퍼의 오염 가능성도 높다는 문제점을 해결하고자 함.If the process of etching polysilicon and the process of removing the photoresist are separated according to the conventional method, the process takes a lot of time and there is a high possibility of contamination of the wafer due to particles during movement between the processes.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

폴리실리콘의 식각시 오버엣칭 단계에서 산소 및 오존가스를 주입하므로써 폴리실리콘 식각공정과 포토레지스트 제거 공정을 동시에 같은 챔버 내에서 수행하고자 함.The polysilicon etching process and the photoresist removal process are simultaneously performed in the same chamber by injecting oxygen and ozone gas in the overetching step when etching polysilicon.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 소자 제조 공정 중 폴리실리콘의 식각과 동시에 포토레지스트를 제거하는데 이용됨.Used to remove photoresist simultaneously with polysilicon etching in semiconductor device manufacturing process.

Description

반도체 소자 제조 방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1C도는 본 발명의 반도체 소자 제조 방법에 따른 공정도.1A to 1C are process diagrams according to the method of manufacturing a semiconductor device of the present invention.

Claims (1)

반도체 소자를 제조하는 방법에 있어서, 반도체 기판 상에 산화막과, 폴리실리콘과, 상기 폴리실리콘을 정의하기 위한 포토레지스트 패턴 및 자연 산화막이 차례로 형성된 구조에서 상기 자연 산화막을 제거하는 제1식각 단계와, 상기 포토레지스트 패턴을 식각 베리어로 이용하여 상기 폴리 실리콘을 식각하는 제2식각 단계와, 상기 제2식각 단계에 사용된 식각가스에 산소 및 오존 가스가 첨가된 식각가스를 이용하여, 상기 폴리실리콘의 오버엣칭 공정과 잔류 포토레지스트를 제거하는 공정을 동시에 실시하는 제3식각 단계를 포함하여 이루어진 것을 특징으로 하는 반도체 소자 제조 방법.A method of manufacturing a semiconductor device, comprising: a first etching step of removing a natural oxide film from a structure in which an oxide film, polysilicon, a photoresist pattern for defining the polysilicon, and a natural oxide film are sequentially formed on a semiconductor substrate; A second etching step of etching the polysilicon using the photoresist pattern as an etching barrier, and an etching gas in which oxygen and ozone gas are added to the etching gas used in the second etching step. And a third etching step of simultaneously performing an overetching process and removing a residual photoresist. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950036978A 1995-10-25 1995-10-25 Semiconductor device manufacturing method KR970023813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036978A KR970023813A (en) 1995-10-25 1995-10-25 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036978A KR970023813A (en) 1995-10-25 1995-10-25 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR970023813A true KR970023813A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036978A KR970023813A (en) 1995-10-25 1995-10-25 Semiconductor device manufacturing method

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KR (1) KR970023813A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399925B1 (en) * 2000-12-27 2003-09-29 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device
KR100802307B1 (en) * 2006-08-31 2008-02-11 동부일렉트로닉스 주식회사 Method of etching metal layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399925B1 (en) * 2000-12-27 2003-09-29 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device
KR100802307B1 (en) * 2006-08-31 2008-02-11 동부일렉트로닉스 주식회사 Method of etching metal layer

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