KR970023791A - Particle Removal Method for Semiconductor Devices - Google Patents

Particle Removal Method for Semiconductor Devices Download PDF

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Publication number
KR970023791A
KR970023791A KR1019950036973A KR19950036973A KR970023791A KR 970023791 A KR970023791 A KR 970023791A KR 1019950036973 A KR1019950036973 A KR 1019950036973A KR 19950036973 A KR19950036973 A KR 19950036973A KR 970023791 A KR970023791 A KR 970023791A
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KR
South Korea
Prior art keywords
semiconductor device
ion implantation
semiconductor devices
cleaning process
particles
Prior art date
Application number
KR1019950036973A
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Korean (ko)
Inventor
안현수
박민규
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950036973A priority Critical patent/KR970023791A/en
Publication of KR970023791A publication Critical patent/KR970023791A/en

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Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자 제조 방법.Semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

반도체 소자 제조를 위한 웨이퍼 가공시, 블랭킷 이온 주입(Blanket Implant) 공정을 실시한 다음, 채널 형성을 위한 이온주입 마스크 공정을 진행하게 되는데, 이 두공정 사이에 별도의 클리닝 공정을 하지 않고 바로 마스크공정을 하기 때문에 많은 파티클이 발생하여 후속 공정인 게이트 전극 형성시 불량 발생을 초래하여 수율을 저하시키는 문제점이 있었음.When processing a wafer for semiconductor device manufacturing, a blanket implant process is performed, followed by an ion implantation mask process for channel formation. The mask process is performed immediately without performing a separate cleaning process between the two processes. Therefore, a large number of particles are generated, resulting in defects in the formation of the gate electrode, which is a subsequent process, thereby lowering the yield.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

반도체 소자 제조시 블랭킷 이온 주입을 실시한 다음, 황산과 과산화 수소의 혼합 용액으로 클리닝 공정을 실시하고 후속의 채널 형성을 위한 마스크 공정을 수행하므로써, 파티클을 제거하는 방법을 제공하고자 함.To fabricate a semiconductor device, a blanket ion implantation is performed, followed by a cleaning process with a mixed solution of sulfuric acid and hydrogen peroxide and a mask process for subsequent channel formation, thereby providing a method for removing particles.

4. 발명의 중요한 용도4. Important uses of the invention

고집적 반도체 소자의 파티클 제거에 이용됨.Used to remove particles from highly integrated semiconductor devices.

Description

반도체 소자의 파티클 제거 방법Particle Removal Method for Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (2)

반도체 소자 제소시 파티클을 제거하는 방법에 있어서, 반도체 기판상에 블랭킷 이온 주입을 실시하는 단계와, 황산과 과산화수소가 혼합된 용액으로 소정의 시간동안 클리닝 공정을 실시한 다음 후속 채널 형성을 위한 이온 주입 마스크 형성 공정을 수행하는 단계를 포함해서 이루어진 반도체 소자의 파티클 제거 방법.A method of removing particles during semiconductor device removal, the method comprising: performing blanket ion implantation on a semiconductor substrate, performing a cleaning process with a solution of sulfuric acid and hydrogen peroxide for a predetermined time, and then forming an ion implantation mask for subsequent channel formation Particle removal method of a semiconductor device comprising the step of performing a forming process. 제1항에 있어서 상기 클리닝 공정은 황산과 과산화수소가 약 2:1로 혼합된 용액에서 약 200초 동안 실시되는 것을 특징으로 하는 반도체 소자의 파티클 제거 방법.The method of claim 1, wherein the cleaning process is performed for about 200 seconds in a solution containing sulfuric acid and hydrogen peroxide mixed at about 2: 1. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950036973A 1995-10-25 1995-10-25 Particle Removal Method for Semiconductor Devices KR970023791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036973A KR970023791A (en) 1995-10-25 1995-10-25 Particle Removal Method for Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036973A KR970023791A (en) 1995-10-25 1995-10-25 Particle Removal Method for Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR970023791A true KR970023791A (en) 1997-05-30

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ID=66583889

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036973A KR970023791A (en) 1995-10-25 1995-10-25 Particle Removal Method for Semiconductor Devices

Country Status (1)

Country Link
KR (1) KR970023791A (en)

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