JPS61112327A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS61112327A JPS61112327A JP23451484A JP23451484A JPS61112327A JP S61112327 A JPS61112327 A JP S61112327A JP 23451484 A JP23451484 A JP 23451484A JP 23451484 A JP23451484 A JP 23451484A JP S61112327 A JPS61112327 A JP S61112327A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- tank
- wafer
- acid
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 abstract description 4
- 238000005406 washing Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 206010033546 Pallor Diseases 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は半導体装置の製造におけるレジスト剥離工程後
の洗浄の方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a cleaning method after a resist stripping process in the manufacture of semiconductor devices.
（従来技術）
半導体装置の製造においてパターン形成にはホトレジス
） （ＰＲ）工程が必要でＬＳＩを完成するまでに５〜
１０数回以上のＰＲ工程を経るのが普通゛である。この
ＰＲ工程はレジストを半導体ウェハーに塗布し、露光・
現像・エツチングをしてパターン加工されこの加工工程
終了後、レジストは除去される必要がある。このレジス
ト剥離は通常有機溶剤の中にウェハーを浸漬することに
よシ行われる。このような従来のレジスト剥離方法では
、レジスト剥離が完全とは言い難く、ウェハー上にレジ
ストの剥離残りが見られることがある。これは、次工程
で異状パターンの原因となり種々の欠陥となる。例えば
異常拡散、酸化膜のピンホール。(Prior art) In the manufacture of semiconductor devices, pattern formation requires a photoresist (PR) process, and it takes 5 to 50 minutes to complete an LSI.
It is normal to go through the PR process more than 10 times. This PR process involves applying resist to a semiconductor wafer, exposing it to
After the pattern is processed by developing and etching, the resist must be removed. This resist stripping is usually performed by immersing the wafer in an organic solvent. In such conventional resist stripping methods, it is difficult to say that the resist is completely stripped, and some residual resist may be left on the wafer. This causes abnormal patterns and various defects in the next process. For example, abnormal diffusion, pinholes in oxide film.
突起、レジストからの不純物による特性変化等である。These include changes in characteristics due to impurities from protrusions and resist.
以上のように従来のＰＲ工程の有機溶剤による剥離のみ
では、レジスト残りが発生して半導体装置の歩留り低下
をもたらす欠点があった。As described above, only stripping using an organic solvent in the conventional PR process has the disadvantage that residual resist is generated, resulting in a decrease in the yield of semiconductor devices.
（発明の目的）
本発明の目的は半導体装置のＦｉｌｌｉ造プロセスにお
けるレジスト剥離工程後にあらたな洗浄工ａを導入する
ことＫよりレジスト残りを低減するプロセスを提供する
ことである。(Object of the Invention) An object of the present invention is to provide a process that reduces resist residue by introducing a new cleaning step a after the resist stripping step in the Filli fabrication process of semiconductor devices.
（発明の構成）
本発明の構成はレジストの有機溶剤による剥離工程直後
に酸くよる洗浄液で半導体ウェハーを洗浄する工程を組
み込むものである。(Configuration of the Invention) The configuration of the present invention incorporates a step of cleaning the semiconductor wafer with an acidic cleaning solution immediately after the resist stripping step with an organic solvent.
（作用）
本発明によればレジスト剥離工程後の半導体ウェハー上
罠残っているレジスト残査は例えば硫酸と過酸化水素と
の混合液で洗浄することにより、レジスト（有機物）が
酸化・分解されるので、はぼ完全に除去することができ
る。(Function) According to the present invention, the resist residue remaining on the semiconductor wafer after the resist stripping process is washed with a mixed solution of sulfuric acid and hydrogen peroxide, for example, so that the resist (organic substance) is oxidized and decomposed. So it can be completely removed.
（発明の効果）
本発明の効果としては半導体装置の製造プロセスにおけ
るレジスト剥離工程後にそのレジスト残りを酸の洗浄液
により、溶解する為にパターン欠陥、例えば、異常拡散
、異常突起、酸化膜のピンホール、レジストの不純物か
らくる特性変動等の防止に役立つものである。(Effects of the Invention) As an effect of the present invention, after the resist stripping step in the semiconductor device manufacturing process, the remaining resist is dissolved by an acid cleaning solution, so that pattern defects such as abnormal diffusion, abnormal protrusions, and pinholes in the oxide film can be eliminated. This is useful for preventing characteristic fluctuations caused by impurities in the resist.
（実施例）。(Example).
まず、従来例のレジスト剥離工程について模式図に従っ
て説明する。第１図は有機剥離装置の流れを示す図であ
る。レジストによるパターン形成処理が終了してレジス
ト剥離装置に送られたウェハーは、例えば囚の剥離液で
処理し、次のの）ではトリクレン、（Ｑではエタノール
で処理されｑ槽では水洗される。これが終了すると次工
程に送られる。このとき、レジストの種類や膜厚、下地
パターンの形状あるいはレジストによるパターン形成処
理等によっては上記のレジスト剥離処理では剥離が完全
ではないためにウェハー上に所謂レジスト残りが生ずる
場合がある。このレジスト残りを評価するため忙、４イ
ンチウェハー２５枚用いレジスト塗布→焼しめ→露光→
現像→エツチング等のプロセス後上記のレジスト剥離処
理を行った後、例えば４００倍の金属顕微鏡でウェハー
半径方向の垂直と平行方向を目視検査したところレジス
ト残り個所は２５枚の平均でウェハー１枚当り〜３ケ所
観察された。このレジスト残シは後工程で前述した如く
の重大な影響を引き起こす可能性かあるＯ
、’１次に本発明の実施例について説明する。First, a conventional resist stripping process will be described with reference to a schematic diagram. FIG. 1 is a diagram showing the flow of the organic stripping apparatus. The wafer that has been sent to the resist stripper after the pattern forming process using the resist is completed is treated with, for example, a stripper solution, and then treated with trichlene (in the next step) and ethanol (in the Q tank), and washed with water in the Q tank. Once completed, it is sent to the next process.At this time, depending on the type and thickness of the resist, the shape of the underlying pattern, or the pattern forming process using the resist, the above resist peeling process may not completely peel off, so some so-called resist may remain on the wafer. In order to evaluate the remaining resist, resist coating using 25 4-inch wafers → baking → exposure →
After the process such as development → etching, etc. After the above-mentioned resist removal process, visual inspection in the perpendicular and parallel directions to the radial direction of the wafer was performed using a metallurgical microscope with a magnification of 400 times. ~3 locations were observed. This resist residue may cause serious effects as mentioned above in the subsequent process.
, 'First, embodiments of the present invention will be described.
第２図は本発明によるレジスト剥離後に酸処理の工程を
導入した流れを示す模式図である。FIG. 2 is a schematic diagram showing the flow of introducing an acid treatment step after resist stripping according to the present invention.
（Ａ）〜ｑまでは従来の有機剥離装置であり、第１図に
示したものと全く同一である。本発明では図の如く、こ
れＫ例えば（Ｅ）槽と（乃槽を付加する。いま例えば（
ト）槽に硫酸と過酸化水素との混合液（７：３）を満た
して〜１２０℃に保ワ、四〜の槽で従来法によるレジス
ト剥離を行ったウェハーを■槽に〜５分浸漬してレジス
ト残りを除去し、続いて（ト）槽にてウェハーを水洗す
る。水洗後は次工程に送られる。本発明でのレジスト残
りの有無を評価するために、４インチウェハー２５枚を
用いてレジスト塗布→焼しめ→繕光→現像→エツチング
等のプロセス後上述した本発明の方法でレジストを剥離
除去し、ウェハー表面を前述と同じ方法で目視検査した
ところレジスト残りは全く観察されなかった。実施例で
は硫酸・過酸化水素水液の場合について説明したが他の
酸としては硫酸・硝酸や、塩酸・過酸化水素の混合液で
も同じ効果が得られた。(A) to q are conventional organic stripping apparatuses, which are exactly the same as that shown in FIG. In the present invention, as shown in the figure, for example, (E) tank and (no tank) are added.For example, (
g) Fill the tank with a mixture of sulfuric acid and hydrogen peroxide (7:3) and keep it at ~120°C.The wafer, which has been subjected to resist stripping using the conventional method in tank 4, is immersed in tank 4 for ~5 minutes. Then, (g) the wafer is washed with water in a bath. After washing with water, it is sent to the next process. In order to evaluate the presence or absence of resist residue in the present invention, 25 4-inch wafers were used and the resist was peeled off and removed using the method of the present invention described above after resist coating → baking → blanching → development → etching. When the wafer surface was visually inspected using the same method as described above, no resist residue was observed. In the example, the case of a sulfuric acid/hydrogen peroxide aqueous solution was explained, but the same effect was obtained with other acids such as sulfuric acid/nitric acid and a mixed solution of hydrochloric acid/hydrogen peroxide.
本発明による有機１１１１？ｌｔと酸洗浄プロセスを組
合せること罠より従来方法罠比べＬＳＩの歩留りとして
〜１０％の向上が達成された。Organic 1111 according to the invention? By combining the LT and acid cleaning processes, an ~10% improvement in LSI yield was achieved compared to the conventional method.
（発明のまとめ）
本発明の半導体装置のレジスト剥離工程後に必ず酸処理
工程を導入することにより、レジスト残りの問題を解決
することができ、ＬＳＩのパターン欠陥を低減し、歩留
り向上に寄与できるものである。(Summary of the Invention) By always introducing an acid treatment step after the resist stripping step of the semiconductor device of the present invention, the problem of remaining resist can be solved, pattern defects in LSI can be reduced, and the yield can be improved. It is.
第１図は従来例の有機剥離装置のプロセスを示す模式図
である。
Ａ槽・・・・・・有機剥離液、Ｂ槽・・・・・・トリク
レン、Ｃ槽・・・・・・エタノール、Ｄ槽・・・・・・
水洗。
第２図は本発明の有機剥離装置と酸処理を組合せたプロ
セスを示す模式図である。
Ａ−Ｄ槽・・・・・・従来法と同じ、Ｅ槽・・・・・・
混酸、Ｆ槽・・・・−・冷水、又は温水洗。
第１図
ＡＢ ＣＤFIG. 1 is a schematic diagram showing the process of a conventional organic peeling apparatus. Tank A: Organic stripping liquid, Tank B: Trichlorene, Tank C: Ethanol, Tank D:
Wash with water. FIG. 2 is a schematic diagram showing a process combining the organic stripping device of the present invention and acid treatment. A-D tank... Same as conventional method, E tank...
Mixed acid, F tank...---Cold water or hot water washing. Figure 1 AB CD
Claims (1)
ジスタ剥離工程後に硫酸、硝酸、塩酸のうち少くとも一
つを含む溶液で該半導体ウェハーを処理することを特徴
とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device, which comprises treating the semiconductor wafer with a solution containing at least one of sulfuric acid, nitric acid, and hydrochloric acid after a resist stripping step of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23451484A JPS61112327A (en) | 1984-11-07 | 1984-11-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23451484A JPS61112327A (en) | 1984-11-07 | 1984-11-07 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61112327A true JPS61112327A (en) | 1986-05-30 |
Family
ID=16972216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23451484A Pending JPS61112327A (en) | 1984-11-07 | 1984-11-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61112327A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0553658U (en) * | 1991-12-25 | 1993-07-20 | 武人 篠崎 | When human beings breathe through the nose, prevent inhalation of bacteria, dirt, pollen, etc. in the air. |
| JP2009111409A (en) * | 2008-12-25 | 2009-05-21 | Mitsubishi Gas Chem Co Inc | Cleaning liquid and cleaning method using the same |
| WO2015087683A1 (en) * | 2013-12-10 | 2015-06-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate treatment method and substrate treatment device |
-
1984
- 1984-11-07 JP JP23451484A patent/JPS61112327A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0553658U (en) * | 1991-12-25 | 1993-07-20 | 武人 篠崎 | When human beings breathe through the nose, prevent inhalation of bacteria, dirt, pollen, etc. in the air. |
| JP2009111409A (en) * | 2008-12-25 | 2009-05-21 | Mitsubishi Gas Chem Co Inc | Cleaning liquid and cleaning method using the same |
| WO2015087683A1 (en) * | 2013-12-10 | 2015-06-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate treatment method and substrate treatment device |
| JP2015115409A (en) * | 2013-12-10 | 2015-06-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing device |
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