KR970001696B1 - Process for elimination of polymer during dry etching of oxidation film - Google Patents
Process for elimination of polymer during dry etching of oxidation film Download PDFInfo
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- KR970001696B1 KR970001696B1 KR1019930009729A KR930009729A KR970001696B1 KR 970001696 B1 KR970001696 B1 KR 970001696B1 KR 1019930009729 A KR1019930009729 A KR 1019930009729A KR 930009729 A KR930009729 A KR 930009729A KR 970001696 B1 KR970001696 B1 KR 970001696B1
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- oxide film
- dry etching
- etching
- plasma
- elimination
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Abstract
Description
제1도는 산화막 제거 공정도.1 is an oxide film removal process chart.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반도체 웨이퍼 2 : 산화막1 semiconductor wafer 2 oxide film
3 : 감광막3: photosensitive film
본 발명은 반도체 소자 제조 공정중 산화막 건식식각시 발생하는 폴리머(polymer)를 제거하기 위한 방법에 관한 것이다.The present invention relates to a method for removing the polymer (polymer) generated during the oxide film dry etching during the semiconductor device manufacturing process.
일반적으로 제1도(a)에 도시된 바와 같이 반도체 웨이퍼(1)상에 형성된 산화막(2)을 제1도(b)와 같이 소정의 패턴(pattern)으로 건식식각 할때 포토마스크(photomask)공정을 거쳐 감광막(3) 마스크 패턴을 형성한 후 식각장비의 챔버 내에서 가스에 의한 플라즈마를 형성하여 소정의 패턴(pattern)으로 건식식각 한다.Generally, as shown in FIG. 1A, a photomask is used to dry-etch the oxide film 2 formed on the semiconductor wafer 1 in a predetermined pattern as shown in FIG. 1B. After forming the mask pattern of the photoresist film 3 through a process, plasma is formed by gas in the chamber of the etching apparatus, and dry etching is performed in a predetermined pattern.
그러나 종래에는 웨이퍼상에 형성된 산화막을 건식식각 할 때 식각가스로 CF4와 CHF3가스 플라즈마를 사용하므로써 필연적으로 탄소(carbon) 성분의 폴리머가 발생하여 공정 챔버의 오염은 물론 식각되어 개방된 콘택홀(contact hole)내에도 폴리머가 형성되며, 또한 상기 식각 가스에 의해 형성된 플라즈마(plasma)에 의해 감광막의 표면이 굳어져서 이후에 상기 감광막을 제거할 시 제거 불량으로 잔류물이 남게되는 문제점이 발생하였다.However, conventionally, when dry etching an oxide film formed on a wafer, a carbon-based polymer is inevitably generated by using CF 4 and CHF 3 gas plasma as an etching gas, so that not only the contamination of the process chamber is etched but also an open contact hole. A polymer is formed in the contact hole, and the surface of the photoresist film is hardened by the plasma formed by the etching gas, so that a residue remains as a result of poor removal when the photoresist film is subsequently removed. .
따라서 본 발명은 산화막 식각 후 동일 챔버내에서 폴리머를 제거하여 웨이퍼 및 쳄버 오염 제거와 이후의 공정인 감광막 제거를 용이하게 할 수 있는 반도체 소자 제조 방법을 제공함을 그 목적으로 한다.Accordingly, an object of the present invention is to provide a method for fabricating a semiconductor device that can remove a polymer in the same chamber after etching an oxide film, thereby facilitating wafer and chamber contamination and subsequent photoresist removal.
상기 목적을 달성하기 위하여 안출된 본 발명은, 반도체 웨이퍼상에 형성된 산화막을 선택적으로 건식식각하기 위한 반도체 소자 제조 방법에 있어서, 상기 산화막 상에 식각부위가 오픈되는 감광막 패턴을 형성하는 단계 ; CF4와 CHF3가스 플라즈마로 상기 산화막을 식각하는 단계 ; 상기 산화막이 식각된 후 발생하는 폴리머를 동일 공정 챔버 내에서 He이 첨부된 O2플리즈마를 사용하여 제거되는 단계 ; 및 상기 감광막 패턴을 제거하는 단계를 포함하여 이루어진다.According to an aspect of the present invention, there is provided a semiconductor device manufacturing method for selectively dry etching an oxide film formed on a semiconductor wafer, the method comprising: forming a photoresist pattern on which the etched portion is opened; Etching the oxide film with CF 4 and CHF 3 gas plasma; Removing the polymer generated after the oxide film is etched using O 2 plasma with He in the same process chamber; And removing the photoresist pattern.
본 발명의 기술적 원리는 O2가 탄소(C)와 화학반응하여 CO 또는 CO2화합물을 형성시킨다는 것을 이용한 것으로, CF4와 CHF3식각가스를 사용하므로써 생성된 탄소(carbon) 폴리머를 공정 챔버 내에서 O2플라즈마를 사용하여 제거할 수 있다.The technical principle of the present invention is that O 2 chemically reacts with carbon (C) to form a CO or CO 2 compound, and the carbon polymer produced by using CF 4 and CHF 3 etching gas is added to the process chamber. Can be removed using an O 2 plasma.
또한, 산화막의 하층막이 폴리실리콘인 경우 순수한 산소를 사용하게 되면 산화막이 식각되어 드러난 하층 폴리머실리콘과의 반응에 의해 산화막이 다시 생성되게 되는데, 이를 방지함과 동시에 손상받는 하층 폴리 실리코 표면을 제거시켜주기 위하여 산소 플리즈마에 He을 첨부함으로써 이러한 문제점을 제거하였다.In addition, when the lower layer of the oxide film is polysilicon, when pure oxygen is used, the oxide film is regenerated by reaction with the lower layer polymer silicon, which is exposed by etching the oxide film, and at the same time, the damaged lower polysilicon surface is removed. This problem was eliminated by attaching He to the oxygen plasma.
본 발명은 웨이퍼 및 공정 챔버내의 탄소 폴리머를 제거하므로써 이후의 감광막 제거 공정을 용이하게 할 수 있고, 하층막의 손상층을 제고하여 접촉저항을 개선시킬 수 있다. 그리고, 본 발명에 의해 산화막 식각시 굳어진 감광막 표면은 일부 제거되어 이후의 감광막 제거 공정을 용이하게 하는 효과가 있다.The present invention can facilitate the subsequent photoresist removal process by removing the carbon polymer in the wafer and the process chamber, and improve the contact resistance by improving the damage layer of the underlayer film. In addition, the surface of the photoresist layer hardened by the etching of the oxide layer by the present invention is partially removed, thereby facilitating subsequent photoresist removal process.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930009729A KR970001696B1 (en) | 1993-05-31 | 1993-05-31 | Process for elimination of polymer during dry etching of oxidation film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930009729A KR970001696B1 (en) | 1993-05-31 | 1993-05-31 | Process for elimination of polymer during dry etching of oxidation film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970001696B1 true KR970001696B1 (en) | 1997-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930009729A KR970001696B1 (en) | 1993-05-31 | 1993-05-31 | Process for elimination of polymer during dry etching of oxidation film |
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| Country | Link |
|---|---|
| KR (1) | KR970001696B1 (en) |
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1993
- 1993-05-31 KR KR1019930009729A patent/KR970001696B1/en not_active IP Right Cessation
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