KR960019551A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
- Publication number
- KR960019551A KR960019551A KR1019940028469A KR19940028469A KR960019551A KR 960019551 A KR960019551 A KR 960019551A KR 1019940028469 A KR1019940028469 A KR 1019940028469A KR 19940028469 A KR19940028469 A KR 19940028469A KR 960019551 A KR960019551 A KR 960019551A
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- wafer
- hcl
- cleaning method
- wafer cleaning
- Prior art date
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 웨이퍼 세정방법에 관한 것으로, 특히 반도체 소자의 제조공정에서 이니셜 옥시데이션으로 웨이퍼상에 산화막을 키우기 전에 H2SO4+H2O2세정을 실시하고, NH4OH+H2O2+H2O 세정을 실시하며, HF+H2O 세정을 실시하고, HCl+H2O2+H2O 세정을 실시하여 웨이퍼 표면의 파티클 및 메탈 이온등의 불순물을 제거할 수 있는 웨이퍼 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning method. In particular, H 2 SO 4 + H 2 O 2 cleaning is performed prior to growing an oxide film on a wafer by initial oxidation in a semiconductor device manufacturing process, and NH 4 OH + H 2 O 2. + H 2 O cleaning, HF + H 2 O cleaning, HCl + H 2 O 2 + H 2 O cleaning to remove impurities such as particles and metal ions on the wafer surface It is about a method.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940028469A KR960019551A (en) | 1994-11-01 | 1994-11-01 | Wafer cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940028469A KR960019551A (en) | 1994-11-01 | 1994-11-01 | Wafer cleaning method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960019551A true KR960019551A (en) | 1996-06-17 |
Family
ID=66687729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940028469A KR960019551A (en) | 1994-11-01 | 1994-11-01 | Wafer cleaning method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960019551A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100417646B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for cleaning interlayer dielectric of semiconductor device |
-
1994
- 1994-11-01 KR KR1019940028469A patent/KR960019551A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100417646B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for cleaning interlayer dielectric of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS62272541A (en) | Surface treating method for semiconductor substrate | |
KR960019551A (en) | Wafer cleaning method | |
KR950027976A (en) | Trench cleaning method of semiconductor device | |
KR100196508B1 (en) | Method of cleaning polysilicon of semiconductor device | |
KR970003581A (en) | Method for removing metal impurities in semiconductor device | |
KR970023813A (en) | Semiconductor device manufacturing method | |
KR940027085A (en) | Cleaning method before forming gate polysilicon film of semiconductor device | |
KR950007006A (en) | Well cleaning process method of semiconductor device | |
KR100235944B1 (en) | Cleaning method for semiconductor device | |
KR960019538A (en) | Etching method of layer formed over thickness | |
KR960012340A (en) | Wafer cleaning method | |
KR890005847A (en) | Treatment Method Before Surface Deposition of Silicon Semiconductor Devices | |
KR930003274A (en) | Surface Cleaning Method of Semiconductor Substrate | |
KR960039212A (en) | Gate oxide film formation method of semiconductor device | |
KR100219071B1 (en) | A cleaning method of semiconductor substrate | |
KR950007007A (en) | Removal Method of Natural Oxide in Semiconductor Device | |
KR19980060016A (en) | Cleaning Method Before Metal Deposition in Semiconductor Manufacturing Process | |
KR940016540A (en) | Cleaning Method of Semiconductor Devices | |
KR960026197A (en) | Method of forming silicide film of semiconductor device | |
KR940015683A (en) | Metal pattern formation method | |
KR950021190A (en) | Semiconductor device cleaning method | |
KR970003573A (en) | Method of Cleaning Semiconductor Wafers | |
KR950001930A (en) | Semiconductor device cleaning method | |
JPH03206616A (en) | Surface treatment for semiconductor | |
KR970052621A (en) | Manufacturing Method of Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |