KR960019551A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR960019551A
KR960019551A KR1019940028469A KR19940028469A KR960019551A KR 960019551 A KR960019551 A KR 960019551A KR 1019940028469 A KR1019940028469 A KR 1019940028469A KR 19940028469 A KR19940028469 A KR 19940028469A KR 960019551 A KR960019551 A KR 960019551A
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KR
South Korea
Prior art keywords
cleaning
wafer
hcl
cleaning method
wafer cleaning
Prior art date
Application number
KR1019940028469A
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Korean (ko)
Inventor
안현수
김영서
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940028469A priority Critical patent/KR960019551A/en
Publication of KR960019551A publication Critical patent/KR960019551A/en

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Abstract

본 발명은 웨이퍼 세정방법에 관한 것으로, 특히 반도체 소자의 제조공정에서 이니셜 옥시데이션으로 웨이퍼상에 산화막을 키우기 전에 H2SO4+H2O2세정을 실시하고, NH4OH+H2O2+H2O 세정을 실시하며, HF+H2O 세정을 실시하고, HCl+H2O2+H2O 세정을 실시하여 웨이퍼 표면의 파티클 및 메탈 이온등의 불순물을 제거할 수 있는 웨이퍼 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning method. In particular, H 2 SO 4 + H 2 O 2 cleaning is performed prior to growing an oxide film on a wafer by initial oxidation in a semiconductor device manufacturing process, and NH 4 OH + H 2 O 2. + H 2 O cleaning, HF + H 2 O cleaning, HCl + H 2 O 2 + H 2 O cleaning to remove impurities such as particles and metal ions on the wafer surface It is about a method.

Description

웨이퍼 세정방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (3)

반도체 소자의 제조공정에서 이니셜 옥시데이션으로 웨이퍼상에 산화막을 키우기 전에 웨이퍼를 세정하는 방법에 있어서, H2SO4+H2O2세정을 실시하는 단계와, 상기 단계로 부터 NH4OH+H2O2+H2O 세정을 실시하는 단계와, 상기 단계로부터 HF+H2O 세정을 실시하는 단계와, 상기 단계로부터 HCl+H2O2+H2O 세정을 실시하는 단계로 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.A method of cleaning a wafer prior to growing an oxide film on the wafer by initial oxidation in the manufacturing process of a semiconductor device, comprising the steps of: performing H 2 SO 4 + H 2 O 2 cleaning; and NH 4 OH + H from the above step. Performing 2 O 2 + H 2 O cleaning, performing HF + H 2 O cleaning from the step, and performing HCl + H 2 O 2 + H 2 O cleaning from the step. Wafer cleaning method characterized by. 제1항에 있어서, 상기 HF+H2O 세정시 HF:H2O의 비율은 1:100인 것을 특징으로 하는 웨이퍼 세정방법.The method of claim 1, wherein the HF: H 2 O ratio is 1: 100 in the HF + H 2 O cleaning. 제1항에 있어서, 상기 HCl+H2O2+H2O 세정시 HCl:H2O2:H2O의 비율은 1:1:6인 것을 특징으로 하는 웨이퍼 세정방법.The method of claim 1, wherein the ratio of HCl: H 2 O 2 : H 2 O in the HCl + H 2 O 2 + H 2 O cleaning is 1: 1: 6. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940028469A 1994-11-01 1994-11-01 Wafer cleaning method KR960019551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940028469A KR960019551A (en) 1994-11-01 1994-11-01 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940028469A KR960019551A (en) 1994-11-01 1994-11-01 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR960019551A true KR960019551A (en) 1996-06-17

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ID=66687729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940028469A KR960019551A (en) 1994-11-01 1994-11-01 Wafer cleaning method

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KR (1) KR960019551A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417646B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for cleaning interlayer dielectric of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417646B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for cleaning interlayer dielectric of semiconductor device

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