KR940016540A - Cleaning Method of Semiconductor Devices - Google Patents
Cleaning Method of Semiconductor Devices Download PDFInfo
- Publication number
- KR940016540A KR940016540A KR1019920026929A KR920026929A KR940016540A KR 940016540 A KR940016540 A KR 940016540A KR 1019920026929 A KR1019920026929 A KR 1019920026929A KR 920026929 A KR920026929 A KR 920026929A KR 940016540 A KR940016540 A KR 940016540A
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- cleaning method
- semiconductor devices
- semiconductor manufacturing
- manufacturing process
- Prior art date
Links
Abstract
본 발명은 반도체 제조 공정중 폴리실리콘 라인을 형성하기 위한 폴리실리콘 에칭 후 형성되는 측벽 폴리머를 제거하기 위해, 종래의 B.O.E 용액에 담그는 공정 대신에, NH4OH+H2O2+H2O 용액을 이용하여 CL계 폴리머를 제거함으로써, 이물질 오염을 방지하고 세척 불량을 방지할 수 있는 클리닝 방법이다.The present invention uses NH 4 OH + H 2 O 2 + H 2 O solution instead of dipping in conventional BOE solution to remove sidewall polymer formed after polysilicon etching to form polysilicon line during semiconductor manufacturing process. By removing the CL-based polymer using a, it is a cleaning method that can prevent contamination of foreign matters and prevent poor cleaning.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 본 발명에 따른 클리닝 방법의 공정도.1 is a process diagram of a cleaning method according to the invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920026929A KR940016540A (en) | 1992-12-30 | 1992-12-30 | Cleaning Method of Semiconductor Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920026929A KR940016540A (en) | 1992-12-30 | 1992-12-30 | Cleaning Method of Semiconductor Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940016540A true KR940016540A (en) | 1994-07-23 |
Family
ID=67215257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920026929A KR940016540A (en) | 1992-12-30 | 1992-12-30 | Cleaning Method of Semiconductor Devices |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940016540A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100417646B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for cleaning interlayer dielectric of semiconductor device |
KR100575342B1 (en) * | 2004-12-29 | 2006-05-02 | 동부일렉트로닉스 주식회사 | Method for reworking wafer |
-
1992
- 1992-12-30 KR KR1019920026929A patent/KR940016540A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100417646B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for cleaning interlayer dielectric of semiconductor device |
KR100575342B1 (en) * | 2004-12-29 | 2006-05-02 | 동부일렉트로닉스 주식회사 | Method for reworking wafer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE455368T1 (en) | METHOD FOR CLEANING SUBSTRATO SURFACES AFTER AN ETCHING STAGE | |
KR940016540A (en) | Cleaning Method of Semiconductor Devices | |
KR970008397A (en) | Etching solution and etching method of semiconductor device using same | |
KR950027976A (en) | Trench cleaning method of semiconductor device | |
KR940027074A (en) | Contact Hole Formation Method of Semiconductor Device by Inclined Etching | |
KR960039212A (en) | Gate oxide film formation method of semiconductor device | |
KR970023813A (en) | Semiconductor device manufacturing method | |
KR980005901A (en) | Method for Cleaning Polysilicon Film of Semiconductor Device | |
KR960001911A (en) | Method of removing photoresist of semiconductor device | |
KR980005900A (en) | Wafer Cleaning Method of Semiconductor Device | |
KR960042993A (en) | Method of Cleaning a Semiconductor Device | |
KR940001297A (en) | Polymer Removal Method | |
KR980005550A (en) | Method of forming a contact hole in a semiconductor device | |
KR930003274A (en) | Surface Cleaning Method of Semiconductor Substrate | |
KR950021190A (en) | Semiconductor device cleaning method | |
KR970054409A (en) | Manufacturing Method of Semiconductor Device | |
KR940020171A (en) | Metal etching method of semiconductor device | |
KR970003955A (en) | PMOS TFT Load Cell Formation Method of Semiconductor Device | |
KR960002612A (en) | Polysilicon Film Cleaning Method | |
KR960019559A (en) | Deglaze Cleaning Method | |
KR930020600A (en) | Polymer removal method after etching polysilicon | |
KR960019551A (en) | Wafer cleaning method | |
KR930008981A (en) | Cleaning method during semiconductor manufacturing process | |
KR940027085A (en) | Cleaning method before forming gate polysilicon film of semiconductor device | |
KR940002968A (en) | Surface cleaning method of semiconductor substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |