KR940016540A - Cleaning Method of Semiconductor Devices - Google Patents

Cleaning Method of Semiconductor Devices Download PDF

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Publication number
KR940016540A
KR940016540A KR1019920026929A KR920026929A KR940016540A KR 940016540 A KR940016540 A KR 940016540A KR 1019920026929 A KR1019920026929 A KR 1019920026929A KR 920026929 A KR920026929 A KR 920026929A KR 940016540 A KR940016540 A KR 940016540A
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KR
South Korea
Prior art keywords
cleaning
cleaning method
semiconductor devices
semiconductor manufacturing
manufacturing process
Prior art date
Application number
KR1019920026929A
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Korean (ko)
Inventor
고영우
육형선
안성환
백동원
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026929A priority Critical patent/KR940016540A/en
Publication of KR940016540A publication Critical patent/KR940016540A/en

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Abstract

본 발명은 반도체 제조 공정중 폴리실리콘 라인을 형성하기 위한 폴리실리콘 에칭 후 형성되는 측벽 폴리머를 제거하기 위해, 종래의 B.O.E 용액에 담그는 공정 대신에, NH4OH+H2O2+H2O 용액을 이용하여 CL계 폴리머를 제거함으로써, 이물질 오염을 방지하고 세척 불량을 방지할 수 있는 클리닝 방법이다.The present invention uses NH 4 OH + H 2 O 2 + H 2 O solution instead of dipping in conventional BOE solution to remove sidewall polymer formed after polysilicon etching to form polysilicon line during semiconductor manufacturing process. By removing the CL-based polymer using a, it is a cleaning method that can prevent contamination of foreign matters and prevent poor cleaning.

Description

반도체 소자의 클리닝 방법Cleaning Method of Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명에 따른 클리닝 방법의 공정도.1 is a process diagram of a cleaning method according to the invention.

Claims (2)

반도체 제조 공정중 폴리실리콘 에칭후 발생하는 폴리머를 제거하기 위한 클리닝 방법에 있어서, Q.D.R(Quick Dump Rinse) 공정에 의해 세척하는 단계와, 포토레지스트막을 제거하는 단계와, H2SO4와 H2O2를 혼합한 용액으로 클리닝 하는 단계와, NH4OH를 이용하여 클리닝하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 클리닝 방법.A cleaning method for removing a polymer generated after polysilicon etching during a semiconductor manufacturing process, the method comprising: washing by a QDR (Quick Dump Rinse) process, removing a photoresist film, H 2 SO 4 and H 2 O And cleaning with NH 4 OH. 제 1 항에 있어서, 상기 NH4OH를 이용한 클리닝 단계는 NH4OH, H2O2, H2O를 혼합한 용액으로 클리닝하는 것을 특징으로 하는 클리닝 방법.The method of claim 1, wherein the cleaning step using the NH 4 OH is a cleaning method characterized by cleaning in a mixed solution of NH 4 OH, H 2 O 2, H 2 O. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026929A 1992-12-30 1992-12-30 Cleaning Method of Semiconductor Devices KR940016540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026929A KR940016540A (en) 1992-12-30 1992-12-30 Cleaning Method of Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026929A KR940016540A (en) 1992-12-30 1992-12-30 Cleaning Method of Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR940016540A true KR940016540A (en) 1994-07-23

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ID=67215257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026929A KR940016540A (en) 1992-12-30 1992-12-30 Cleaning Method of Semiconductor Devices

Country Status (1)

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KR (1) KR940016540A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417646B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for cleaning interlayer dielectric of semiconductor device
KR100575342B1 (en) * 2004-12-29 2006-05-02 동부일렉트로닉스 주식회사 Method for reworking wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417646B1 (en) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 Method for cleaning interlayer dielectric of semiconductor device
KR100575342B1 (en) * 2004-12-29 2006-05-02 동부일렉트로닉스 주식회사 Method for reworking wafer

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