KR940001297A - Polymer Removal Method - Google Patents

Polymer Removal Method Download PDF

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Publication number
KR940001297A
KR940001297A KR1019920009869A KR920009869A KR940001297A KR 940001297 A KR940001297 A KR 940001297A KR 1019920009869 A KR1019920009869 A KR 1019920009869A KR 920009869 A KR920009869 A KR 920009869A KR 940001297 A KR940001297 A KR 940001297A
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KR
South Korea
Prior art keywords
polysilicon
wafer
methyle
polymer
tetra
Prior art date
Application number
KR1019920009869A
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Korean (ko)
Other versions
KR950006975B1 (en
Inventor
고영우
백인혁
김상익
현일선
Original Assignee
김주용
현대전자산업주식회사
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019920009869A priority Critical patent/KR950006975B1/en
Publication of KR940001297A publication Critical patent/KR940001297A/en
Application granted granted Critical
Publication of KR950006975B1 publication Critical patent/KR950006975B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

반도체 소자 제조공정에서 폴리실리콘을 식각한 후 폴리실리콘 측벽에 형성되는 폴리머를 습식식각용액인 B.O.E100:1를 사용하는 대신 T.M.A.H(TETRA METHYLE AMMONIUM HYDROXIDE)현상액을 이용하여 폴리머를 제거함으로써, 파티클 감소, 오염방지 밍 단위 웨이퍼당 공정 재현성 향상 및 세척효과가 증대하여, 게이트 산화막 손상을 감소시키며, 브레이크-다운 전압을 개선시킬 수 있다.After etching polysilicon in the semiconductor device manufacturing process, the polymer formed on the sidewall of polysilicon is removed by using TMAH (TETRA METHYLE AMMONIUM HYDROXIDE) instead of using wet etching solution BOE100: 1 to reduce particles, Improved process reproducibility and cleaning effects per anti-contamination dimming wafer, resulting in reduced gate oxide damage and improved breakdown voltage.

Description

폴리머 제거방법Polymer Removal Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본발명에 따라 실리콘 웨이퍼 상부에 게이트 산화막과 폴리실리콘층 및 포토레지스트층을 순차적으로 형성시켜, 폴리실리콘을 상부의 포토레지스트를 이용하여 식각할때 폴리실리콘층 측벽에 CL계의 폴리머가 형성되어 있는 상태를 나타내는 반도체소자의 단면도.FIG. 1 sequentially forms a gate oxide film, a polysilicon layer, and a photoresist layer on a silicon wafer according to the present invention, and when a polysilicon is etched using an upper photoresist, a CL-based polymer is formed on the sidewalls of the polysilicon layer. Sectional drawing of the semiconductor element which shows the state currently formed.

제2도는 제1도의 공정후 퀵 덤프 린스(QUICK DUMP RINSE)공정을 한후, 폴리실리콘층 상부의 잔존 포토레지스트층을 스트립하는 단계를 나타내는 반도체소자의 단면도.FIG. 2 is a cross-sectional view of a semiconductor device illustrating a step of stripping a remaining photoresist layer on a polysilicon layer after performing a quick dump rinse process after FIG.

Claims (2)

반도체 소자 제조공정에서 폴리실리콘을 식각한 후의 폴리머를 제거하기 위한 방법에 있어서, 실리콘웨이퍼(1)상부에 증착된 폴리실리콘층(3)을 상부에 코팅된 포토레지스트층(5)을 이용하여 식각하는 단계와, 상기 웨이퍼내(1)에 잔류하는 CL계 성분을 제거하기 위해 퀵 덤프 린스(QUICK DUMP RINSE)공정을 하는 단계와, 플라즈마를 이용하여 폴리실리콘층(3) 상부에 잔존하는 포토레지스트층(5)을 스트립하는 단계와, 폴리게이트 측벽에 형성된 CL계 폴리머(7)를 TETRA METHYLE AMMONIUM HYDROXIDE(T.M.A.H)로 현상처리하는 단계와, H2SO4＋H2O2용액으로 웨이퍼를 세척하는 단계를 포함하는 것을 특징으로하는 폴리머 제거방법.A method for removing a polymer after etching polysilicon in a semiconductor device manufacturing process, wherein the polysilicon layer 3 deposited on the silicon wafer 1 is etched using the photoresist layer 5 coated thereon. Performing a QUICK DUMP RINSE process to remove the CL-based components remaining in the wafer 1, and photoresist remaining on the polysilicon layer 3 using plasma. Stripping the layer (5), developing the CL-based polymer (7) formed on the polygate sidewalls with TETRA METHYLE AMMONIUM HYDROXIDE (TMAH), and cleaning the wafer with a H 2 SO 4 + H 2 O 2 solution. Polymer removal method comprising the step of. 제1항에 있어서, 상기 TETRA METHYLE AMMONIUM HYDROXIDE (T.M.A.H)로 현상처리하는 시간은 50 내지 100초동안 인것을 특징으로 하는 폴리머 제거방법.The method of claim 1, wherein the development time with TETRA METHYLE AMMONIUM HYDROXIDE (T.M.A.H) is 50 to 100 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009869A 1992-06-08 1992-06-08 Removing method of polymer KR950006975B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009869A KR950006975B1 (en) 1992-06-08 1992-06-08 Removing method of polymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009869A KR950006975B1 (en) 1992-06-08 1992-06-08 Removing method of polymer

Publications (2)

Publication Number Publication Date
KR940001297A true KR940001297A (en) 1994-01-11
KR950006975B1 KR950006975B1 (en) 1995-06-26

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Application Number Title Priority Date Filing Date
KR1019920009869A KR950006975B1 (en) 1992-06-08 1992-06-08 Removing method of polymer

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282418B1 (en) * 1998-02-27 2001-06-01 김영환 Polymer Removal Method of Semiconductor Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282418B1 (en) * 1998-02-27 2001-06-01 김영환 Polymer Removal Method of Semiconductor Device

Also Published As

Publication number Publication date
KR950006975B1 (en) 1995-06-26

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