KR930008981A - Cleaning method during semiconductor manufacturing process - Google Patents

Cleaning method during semiconductor manufacturing process Download PDF

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Publication number
KR930008981A
KR930008981A KR1019910018551A KR910018551A KR930008981A KR 930008981 A KR930008981 A KR 930008981A KR 1019910018551 A KR1019910018551 A KR 1019910018551A KR 910018551 A KR910018551 A KR 910018551A KR 930008981 A KR930008981 A KR 930008981A
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KR
South Korea
Prior art keywords
cleaning
manufacturing process
semiconductor manufacturing
inorganic
cleaning method
Prior art date
Application number
KR1019910018551A
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Korean (ko)
Inventor
고용선
김영관
박태훈
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910018551A priority Critical patent/KR930008981A/en
Publication of KR930008981A publication Critical patent/KR930008981A/en

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Abstract

반도체 제조공정에 있어서 세정은 일반적으로 유기세정 및 무기세정으로 구분할 수 있는데, 유기세정의 경우 H2SO4, SC-1 등의 케미칼을 사용하고 있으며 무기물은 SC-2, HF 등을 사용하고 있다.In the semiconductor manufacturing process, cleaning is generally classified into organic cleaning and inorganic cleaning. For organic cleaning, chemicals such as H 2 SO 4 and SC-1 are used, and inorganic materials are SC-2 and HF. .

본 발명은 무기세정의 한 방법으로써 종전에 사용하고 있던 HF/H2O 세정 대신에 HF+H2O+O3세정처리를 하는 방식인데 HF가 갖고 있는 무기물 세정효과 이외에 강력한 산화제인 O3를 이용하여 웨이퍼 표면에 흡착되어 있을 가능성이 있는 금속을 금속 산화막화시킨 후 HF로 금속 산화막을 제거함으로써 종전의 HF/H2O 세정 보다는 불순물 제거측면에서 극대화 할 수 있다.In the present invention, a method of inorganic cleaning, in which HF + H 2 O + O 3 cleaning process is used instead of HF / H 2 O cleaning, which is used in the past, in addition to the inorganic cleaning effect of HF, O 3 , a powerful oxidizing agent, is used. The metal that is likely to be adsorbed on the surface of the wafer is formed into a metal oxide film, and the metal oxide film is removed by HF, thereby maximizing the impurities in terms of impurities rather than the conventional HF / H 2 O cleaning.

Description

반도체 제조공정중 세정방법Cleaning method during semiconductor manufacturing process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

첨부된 도면은 HF/H2O/O3처리조의 구성을 나타낸 도면이다.The accompanying drawings show the structure of an HF / H 2 O / O 3 treatment tank.

Claims (2)

HF/H2O 희석 용액에 O2가스를 무성 방전시켜 얻은 O3가스를 처리조에 주입시켜 사용하는 것을 특징으로 하는 반도체 장치의 세정방법.A method of cleaning a semiconductor device, characterized by injecting an O 3 gas obtained by silent discharge of O 2 gas into a HF / H 2 O dilution solution, into a treatment tank. 제1항에 있어서, 상기한 O3가스를 사용하여 웨이퍼 표면에 흡착되어 있는 금속을 산화막화시키고 이때 생긴 금속 산화막은 HF 처리를 통하여 제거함을 특징으로 하는 반도체 장치의 세정방법.The method according to claim 1, wherein the metal adsorbed on the surface of the wafer is oxidized using the O 3 gas, and the resulting metal oxide film is removed by HF treatment. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910018551A 1991-10-21 1991-10-21 Cleaning method during semiconductor manufacturing process KR930008981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910018551A KR930008981A (en) 1991-10-21 1991-10-21 Cleaning method during semiconductor manufacturing process

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Application Number Priority Date Filing Date Title
KR1019910018551A KR930008981A (en) 1991-10-21 1991-10-21 Cleaning method during semiconductor manufacturing process

Publications (1)

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KR930008981A true KR930008981A (en) 1993-05-22

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KR1019910018551A KR930008981A (en) 1991-10-21 1991-10-21 Cleaning method during semiconductor manufacturing process

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100425475B1 (en) * 2001-09-19 2004-03-30 삼성전자주식회사 Method for cleaning damage layers and polymer residue from semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100425475B1 (en) * 2001-09-19 2004-03-30 삼성전자주식회사 Method for cleaning damage layers and polymer residue from semiconductor device

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