KR930008981A - Cleaning method during semiconductor manufacturing process - Google Patents
Cleaning method during semiconductor manufacturing process Download PDFInfo
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- KR930008981A KR930008981A KR1019910018551A KR910018551A KR930008981A KR 930008981 A KR930008981 A KR 930008981A KR 1019910018551 A KR1019910018551 A KR 1019910018551A KR 910018551 A KR910018551 A KR 910018551A KR 930008981 A KR930008981 A KR 930008981A
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- cleaning
- manufacturing process
- semiconductor manufacturing
- inorganic
- cleaning method
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Abstract
반도체 제조공정에 있어서 세정은 일반적으로 유기세정 및 무기세정으로 구분할 수 있는데, 유기세정의 경우 H2SO4, SC-1 등의 케미칼을 사용하고 있으며 무기물은 SC-2, HF 등을 사용하고 있다.In the semiconductor manufacturing process, cleaning is generally classified into organic cleaning and inorganic cleaning. For organic cleaning, chemicals such as H 2 SO 4 and SC-1 are used, and inorganic materials are SC-2 and HF. .
본 발명은 무기세정의 한 방법으로써 종전에 사용하고 있던 HF/H2O 세정 대신에 HF+H2O+O3세정처리를 하는 방식인데 HF가 갖고 있는 무기물 세정효과 이외에 강력한 산화제인 O3를 이용하여 웨이퍼 표면에 흡착되어 있을 가능성이 있는 금속을 금속 산화막화시킨 후 HF로 금속 산화막을 제거함으로써 종전의 HF/H2O 세정 보다는 불순물 제거측면에서 극대화 할 수 있다.In the present invention, a method of inorganic cleaning, in which HF + H 2 O + O 3 cleaning process is used instead of HF / H 2 O cleaning, which is used in the past, in addition to the inorganic cleaning effect of HF, O 3 , a powerful oxidizing agent, is used. The metal that is likely to be adsorbed on the surface of the wafer is formed into a metal oxide film, and the metal oxide film is removed by HF, thereby maximizing the impurities in terms of impurities rather than the conventional HF / H 2 O cleaning.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
첨부된 도면은 HF/H2O/O3처리조의 구성을 나타낸 도면이다.The accompanying drawings show the structure of an HF / H 2 O / O 3 treatment tank.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910018551A KR930008981A (en) | 1991-10-21 | 1991-10-21 | Cleaning method during semiconductor manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910018551A KR930008981A (en) | 1991-10-21 | 1991-10-21 | Cleaning method during semiconductor manufacturing process |
Publications (1)
Publication Number | Publication Date |
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KR930008981A true KR930008981A (en) | 1993-05-22 |
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ID=67348833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019910018551A KR930008981A (en) | 1991-10-21 | 1991-10-21 | Cleaning method during semiconductor manufacturing process |
Country Status (1)
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KR (1) | KR930008981A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100425475B1 (en) * | 2001-09-19 | 2004-03-30 | 삼성전자주식회사 | Method for cleaning damage layers and polymer residue from semiconductor device |
-
1991
- 1991-10-21 KR KR1019910018551A patent/KR930008981A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100425475B1 (en) * | 2001-09-19 | 2004-03-30 | 삼성전자주식회사 | Method for cleaning damage layers and polymer residue from semiconductor device |
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Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |