KR940016550A - Oxide etching method of semiconductor device - Google Patents

Oxide etching method of semiconductor device Download PDF

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Publication number
KR940016550A
KR940016550A KR1019920024802A KR920024802A KR940016550A KR 940016550 A KR940016550 A KR 940016550A KR 1019920024802 A KR1019920024802 A KR 1019920024802A KR 920024802 A KR920024802 A KR 920024802A KR 940016550 A KR940016550 A KR 940016550A
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KR
South Korea
Prior art keywords
etching
oxide film
gas
semiconductor device
etching method
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Application number
KR1019920024802A
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Korean (ko)
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KR960008899B1 (en
Inventor
구자붕
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문정환
금성일렉트론 주식회사
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Priority to KR92024802A priority Critical patent/KR960008899B1/en
Publication of KR940016550A publication Critical patent/KR940016550A/en
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Publication of KR960008899B1 publication Critical patent/KR960008899B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 장치의 제조 공정시 산화막을 식각하는 방법에 관한 것으로서, 특히 산화막 식각시 발생되는 유기물질을 제거하고, 선폭의 축소없이 비등방향으로 식각하도록 하는 반도체 장치의 산화막 식각방법에 관한 것이다. 이를 위하여 본 발명에서는, 반도체 장치의 산화막 식각방법에 있어서, 산화막 식각시 O2가스에 H2+He 혼합 가스를 포함한 식각가스를 사용하여 식각시 생성되는 유기 화합물을 제거하고, 감광제 선폭의 축소없이 비등방향으로 식각 되도록한 것을 특징으로 하는 반도체 장치의 산화막 식각방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of etching an oxide film during a manufacturing process of a semiconductor device, and more particularly, to an oxide film etching method of a semiconductor device for removing organic materials generated during etching of an oxide film and etching in a boiling direction without reducing a line width. To this end, in the present invention, in the oxide film etching method of the semiconductor device, by using an etching gas containing H 2 + He mixed gas in the O 2 gas when the oxide film is etched to remove the organic compound generated during etching, without reducing the line width of the photosensitive agent An oxide film etching method of a semiconductor device, characterized in that the etching in the boiling direction.

Description

반도체 장치의 산화막 식각방법Oxide etching method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 반도체 장치의 산화막 식각 공정도, 제 3 도는 본 발명에 따른 He 가스첨가시 각 조건에 의한 식각속도를 도시한 그래프.2 is an oxide film etching process diagram of a semiconductor device according to the present invention, and FIG.

Claims (3)

반도체 장치의 금속 배선의 형성을 위해 식각가스에 산화가스인 O2를 사용하여 산화막을 식각하는 반도체 장치의 산화막 식각방법에 있어서, 상기 산화막 식각시 O2가스에 H2+He혼합 가스를 포함한 식각가스를 사용하여 식각시 생성되는 유기 화합물을 제거하고, 감광제 선폭의 축소없이 비등방향으로 식각 되도록한 것을 특징으로 하는 반도체 장치의 산화막 식각방법.An oxide film etching method of a semiconductor device in which an oxide film is etched using O 2 , which is an oxidizing gas, in an etching gas for forming a metal wiring of the semiconductor device, wherein the oxide film includes an H 2 + He mixed gas in the O 2 gas. The method of etching an oxide film of a semiconductor device, characterized in that the organic compound produced during etching is removed using a gas, and the organic compound is etched in the boiling direction without reducing the line width of the photosensitive agent. 제 1 항에 있어서 상기 H2가스는, O2가스에 대해 0~50% 비율로 혼합한 것을 특징으로 하는 반도체 장치의 산화막 식각방법.The oxide film etching method of claim 1, wherein the H 2 gas is mixed at a ratio of 0 to 50% with respect to the O 2 gas. 제 1 항에 있어서 상기 H2가스는, He가스에 대해 0~10% 비율로 혼합한 것을 특징으로 하는 반도체 장치의 산화막 식각방법.The method of claim 1, wherein the H 2 gas is mixed at a ratio of 0 to 10% with respect to He gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR92024802A 1992-12-19 1992-12-19 Oxide film etching method of semiconductor device KR960008899B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92024802A KR960008899B1 (en) 1992-12-19 1992-12-19 Oxide film etching method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92024802A KR960008899B1 (en) 1992-12-19 1992-12-19 Oxide film etching method of semiconductor device

Publications (2)

Publication Number Publication Date
KR940016550A true KR940016550A (en) 1994-07-23
KR960008899B1 KR960008899B1 (en) 1996-07-05

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ID=19346030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92024802A KR960008899B1 (en) 1992-12-19 1992-12-19 Oxide film etching method of semiconductor device

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Publication number Publication date
KR960008899B1 (en) 1996-07-05

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