KR940016590A - Oxide film formation method of semiconductor device - Google Patents

Oxide film formation method of semiconductor device Download PDF

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Publication number
KR940016590A
KR940016590A KR1019920027070A KR920027070A KR940016590A KR 940016590 A KR940016590 A KR 940016590A KR 1019920027070 A KR1019920027070 A KR 1019920027070A KR 920027070 A KR920027070 A KR 920027070A KR 940016590 A KR940016590 A KR 940016590A
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KR
South Korea
Prior art keywords
oxide film
semiconductor device
film formation
formation method
forming
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KR1019920027070A
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Korean (ko)
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KR960011935B1 (en
Inventor
엄금용
임재은
주문식
박미라
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019920027070A priority Critical patent/KR960011935B1/en
Publication of KR940016590A publication Critical patent/KR940016590A/en
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Publication of KR960011935B1 publication Critical patent/KR960011935B1/en

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Abstract

본 발명은 고집적 반도체 소자의 산화막 형성방법에 관한 것으로 종래의 산화막을 형성하는 주산화공정에서 TCA(Trichloroethane)을 사용하였는데 이 경우 인체에 해롭고 지구상의 오존층을 파괴하는 요인이 되므로 TCA 대신에 DCE(Dichloroethylene)을 사용하는 기술이다.The present invention relates to a method of forming an oxide film of a highly integrated semiconductor device, which used TCA (Trichloroethane) in the main oxidation process of forming a conventional oxide film. ) Is a technology that uses.

Description

반도체 소자의 산화막 형성방법Oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

산화막 형성방법에 있어서, 주산화공정에서 DCE(Dichloroethylene)를 추가하여 산화막을 성장시키는 것을 특징으로 하는 산화막 형성방법.An oxide film forming method, wherein the oxide film is grown by adding DCE (Dichloroethylene) in the main oxidation step. 제 1 항에 있어서, 상기 산화막은 게이트 산화막, 희생 산화막 또는 필드 산화막으로 성장시키는 것을 특징으로 하는 산화막 형성방법.The method of claim 1, wherein the oxide film is grown into a gate oxide film, a sacrificial oxide film, or a field oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027070A 1992-12-31 1992-12-31 Oxide film forming method of semiconductor device KR960011935B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920027070A KR960011935B1 (en) 1992-12-31 1992-12-31 Oxide film forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027070A KR960011935B1 (en) 1992-12-31 1992-12-31 Oxide film forming method of semiconductor device

Publications (2)

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KR940016590A true KR940016590A (en) 1994-07-23
KR960011935B1 KR960011935B1 (en) 1996-09-04

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Application Number Title Priority Date Filing Date
KR1019920027070A KR960011935B1 (en) 1992-12-31 1992-12-31 Oxide film forming method of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701170B1 (en) * 2005-05-04 2007-03-28 주식회사 대우일렉트로닉스 Microwave oven having variable cooking space

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701170B1 (en) * 2005-05-04 2007-03-28 주식회사 대우일렉트로닉스 Microwave oven having variable cooking space

Also Published As

Publication number Publication date
KR960011935B1 (en) 1996-09-04

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