KR980005304A - Method for Forming Photosensitive Film of Semiconductor Device - Google Patents

Method for Forming Photosensitive Film of Semiconductor Device Download PDF

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Publication number
KR980005304A
KR980005304A KR1019960022827A KR19960022827A KR980005304A KR 980005304 A KR980005304 A KR 980005304A KR 1019960022827 A KR1019960022827 A KR 1019960022827A KR 19960022827 A KR19960022827 A KR 19960022827A KR 980005304 A KR980005304 A KR 980005304A
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KR
South Korea
Prior art keywords
photosensitive film
film
semiconductor device
forming
forming photosensitive
Prior art date
Application number
KR1019960022827A
Other languages
Korean (ko)
Inventor
원화연
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960022827A priority Critical patent/KR980005304A/en
Publication of KR980005304A publication Critical patent/KR980005304A/en

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Abstract

본 발명은 반도체 소자의 감광막 형성방법을 제공하는 것으로, 극성이 다른 감광막을 다중으로 도포하므로써 핀홀을 방지할 수 있음은 물론 상층 감광막에 형성되는 홀지름을 하층 감광막에 형성되는 홀지름보다 크게 하므로써 얇은 두께의 감광막을 실현할 수 있는 효과가 있다.The present invention provides a method for forming a photosensitive film of a semiconductor device, by pinching the photoresist film having a different polarity can be prevented, as well as thinner by making the hole diameter formed in the upper photosensitive film larger than the hole diameter formed in the lower photosensitive film. There is an effect of realizing a photosensitive film having a thickness.

Description

반도체 소자의 감광막 형성방법Method for Forming Photosensitive Film of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2a내지 2c도는 본 발명에 따른 반도체 소자의 감광막 형성방법을 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of a device for explaining a method of forming a photosensitive film of a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 감광막 형성방법에 있어서, 실리콘 기판상에 절연막을 형성한 후 상기 절연막상에 제1 감광막을 도포하는 단계와, 상기 단계로부터 상기 제1 감광막을 패터닝하여 홀을 형성하는 단계와, 상기 단계로부터 상기 제1 감광막상에 제2 감광막을 도포하는 단계와, 상기 단계로부터 상기 제2 감광막을 패터닝하여 홀을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.A method of forming a photosensitive film of a semiconductor device, comprising: forming an insulating film on a silicon substrate and then applying a first photosensitive film on the insulating film; patterning the first photosensitive film from the step to form a hole; And applying a second photoresist film on the first photoresist film, and patterning the second photoresist film from the step to form a hole. 제1항에 있어서, 상기 제1 및 제2 감광막은 극성이 서로 다른 것을 특징으로 하는 반도체 소자의 감광막 형성 방법.The method of claim 1, wherein the first and second photoresist films have different polarities. 제1항에 있어서, 상기 제2 감광막에 형성되는 홀은 제1 감광막에 형성되는 홀의 지름 보다 크게 형성되는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.The method of claim 1, wherein the hole formed in the second photosensitive film is larger than the diameter of the hole formed in the first photosensitive film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960022827A 1996-06-21 1996-06-21 Method for Forming Photosensitive Film of Semiconductor Device KR980005304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960022827A KR980005304A (en) 1996-06-21 1996-06-21 Method for Forming Photosensitive Film of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960022827A KR980005304A (en) 1996-06-21 1996-06-21 Method for Forming Photosensitive Film of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR980005304A true KR980005304A (en) 1998-03-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960022827A KR980005304A (en) 1996-06-21 1996-06-21 Method for Forming Photosensitive Film of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR980005304A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100384877B1 (en) * 1999-06-28 2003-05-22 주식회사 하이닉스반도체 A method for coating photoresist
KR100493132B1 (en) * 1997-12-04 2005-09-07 동경 엘렉트론 주식회사 Method for forming resist film and apparatus for forming resist film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493132B1 (en) * 1997-12-04 2005-09-07 동경 엘렉트론 주식회사 Method for forming resist film and apparatus for forming resist film
KR100384877B1 (en) * 1999-06-28 2003-05-22 주식회사 하이닉스반도체 A method for coating photoresist

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