KR960019576A - Method of forming gate insulating film of ROM - Google Patents

Method of forming gate insulating film of ROM Download PDF

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Publication number
KR960019576A
KR960019576A KR1019940030786A KR19940030786A KR960019576A KR 960019576 A KR960019576 A KR 960019576A KR 1019940030786 A KR1019940030786 A KR 1019940030786A KR 19940030786 A KR19940030786 A KR 19940030786A KR 960019576 A KR960019576 A KR 960019576A
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KR
South Korea
Prior art keywords
film
forming
oxide film
rom
gate insulating
Prior art date
Application number
KR1019940030786A
Other languages
Korean (ko)
Inventor
신용욱
최종윤
이신국
백동원
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940030786A priority Critical patent/KR960019576A/en
Publication of KR960019576A publication Critical patent/KR960019576A/en

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Abstract

본 발명은 반도체 소자인 롬(ROM)의 게이트절연막 형성방법에 관한 것으로, 산화막-질화막-산화막(ONO)막을 이용한 롬(ROM)의 게이트절연막 형성방법에 있어서, 플로팅 게이트의 산화막(1), 제1폴리실리콘막(2)을 형성하는 단계; 산화막-질화막-산화막(23)을 형성한 후 상기 산화막-질화막-산화막(23), 제1폴리실리콘막(2), 플로팅 게이트 산화막(1)을 차례로 식각하는 단계; 콘트롤 게이트의 산화막(4), 제2폴리실리콘막(5)을 형성한 후 상기 제2폴리실리콘막을 선택식각하여 콘트롤 게이트를 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a gate insulating film of a ROM, which is a semiconductor device, and comprises a method of forming a gate insulating film of a ROM using an oxide film-nitride-oxide film (ONO). Forming a polysilicon film 2; Forming an oxide film-nitride film-oxide film (23), and then etching the oxide film-nitride film-oxide film (23), the first polysilicon film (2), and the floating gate oxide film (1) in sequence; And forming a control gate by selectively etching the second polysilicon film after forming the oxide film 4 and the second polysilicon film 5 of the control gate.

Description

롬(ROM)의 게이트절연막 형성방법Method of forming gate insulating film of ROM

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2B도는 본 발명에 따른 롬의 게이트절연막 형성 공정 단면도.2B is a cross-sectional view of a process of forming a gate insulating film of a ROM according to the present invention.

Claims (1)

산화막-질화막-산화막(ONO)막을 이용한 롬(ROM)의 게이트절연막 형성방법에 있어서, 플로팅 게이트의 산화막, 제1폴리실리콘막을 형성하는 단계; 산화막-질화막-산화막을 형성한 후 상기 산화막-질화막-산화막, 제1폴리실리콘막, 플로팅 게이트 산화막을 차례로 식각하는 단계; 콘트롤 게이트의 산화막, 제2폴리실리콘막을 형성한 후 상기 제2폴리실리콘막을 선택식각하여 콘트롤 게이트를 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 롬(ROM)의 게이트절연막 형성방법.CLAIMS 1. A method for forming a gate insulating film of a ROM using an oxide film-nitride film-ONO film, the method comprising: forming an oxide film of a floating gate and a first polysilicon film; Etching the oxide film-nitride film-oxide film, the first polysilicon film, and the floating gate oxide film in order after forming an oxide film-nitride film-oxide film; And forming a control gate by selectively etching the second polysilicon film after forming an oxide film and a second polysilicon film of the control gate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940030786A 1994-11-22 1994-11-22 Method of forming gate insulating film of ROM KR960019576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940030786A KR960019576A (en) 1994-11-22 1994-11-22 Method of forming gate insulating film of ROM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940030786A KR960019576A (en) 1994-11-22 1994-11-22 Method of forming gate insulating film of ROM

Publications (1)

Publication Number Publication Date
KR960019576A true KR960019576A (en) 1996-06-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940030786A KR960019576A (en) 1994-11-22 1994-11-22 Method of forming gate insulating film of ROM

Country Status (1)

Country Link
KR (1) KR960019576A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398039B1 (en) * 1996-06-29 2004-01-07 주식회사 하이닉스반도체 Method for manufacturing flash memory device
KR100564424B1 (en) * 1999-07-02 2006-03-28 주식회사 하이닉스반도체 Method of forming gate insulating layer in semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398039B1 (en) * 1996-06-29 2004-01-07 주식회사 하이닉스반도체 Method for manufacturing flash memory device
KR100564424B1 (en) * 1999-07-02 2006-03-28 주식회사 하이닉스반도체 Method of forming gate insulating layer in semiconductor device

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