KR960019576A - Method of forming gate insulating film of ROM - Google Patents
Method of forming gate insulating film of ROM Download PDFInfo
- Publication number
- KR960019576A KR960019576A KR1019940030786A KR19940030786A KR960019576A KR 960019576 A KR960019576 A KR 960019576A KR 1019940030786 A KR1019940030786 A KR 1019940030786A KR 19940030786 A KR19940030786 A KR 19940030786A KR 960019576 A KR960019576 A KR 960019576A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- oxide film
- rom
- gate insulating
- Prior art date
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Abstract
본 발명은 반도체 소자인 롬(ROM)의 게이트절연막 형성방법에 관한 것으로, 산화막-질화막-산화막(ONO)막을 이용한 롬(ROM)의 게이트절연막 형성방법에 있어서, 플로팅 게이트의 산화막(1), 제1폴리실리콘막(2)을 형성하는 단계; 산화막-질화막-산화막(23)을 형성한 후 상기 산화막-질화막-산화막(23), 제1폴리실리콘막(2), 플로팅 게이트 산화막(1)을 차례로 식각하는 단계; 콘트롤 게이트의 산화막(4), 제2폴리실리콘막(5)을 형성한 후 상기 제2폴리실리콘막을 선택식각하여 콘트롤 게이트를 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a gate insulating film of a ROM, which is a semiconductor device, and comprises a method of forming a gate insulating film of a ROM using an oxide film-nitride-oxide film (ONO). Forming a polysilicon film 2; Forming an oxide film-nitride film-oxide film (23), and then etching the oxide film-nitride film-oxide film (23), the first polysilicon film (2), and the floating gate oxide film (1) in sequence; And forming a control gate by selectively etching the second polysilicon film after forming the oxide film 4 and the second polysilicon film 5 of the control gate.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2B도는 본 발명에 따른 롬의 게이트절연막 형성 공정 단면도.2B is a cross-sectional view of a process of forming a gate insulating film of a ROM according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940030786A KR960019576A (en) | 1994-11-22 | 1994-11-22 | Method of forming gate insulating film of ROM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940030786A KR960019576A (en) | 1994-11-22 | 1994-11-22 | Method of forming gate insulating film of ROM |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960019576A true KR960019576A (en) | 1996-06-17 |
Family
ID=66648339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940030786A KR960019576A (en) | 1994-11-22 | 1994-11-22 | Method of forming gate insulating film of ROM |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960019576A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100398039B1 (en) * | 1996-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | Method for manufacturing flash memory device |
KR100564424B1 (en) * | 1999-07-02 | 2006-03-28 | 주식회사 하이닉스반도체 | Method of forming gate insulating layer in semiconductor device |
-
1994
- 1994-11-22 KR KR1019940030786A patent/KR960019576A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100398039B1 (en) * | 1996-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | Method for manufacturing flash memory device |
KR100564424B1 (en) * | 1999-07-02 | 2006-03-28 | 주식회사 하이닉스반도체 | Method of forming gate insulating layer in semiconductor device |
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |