KR960002744A - Device Separating Method of Semiconductor Device - Google Patents

Device Separating Method of Semiconductor Device Download PDF

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Publication number
KR960002744A
KR960002744A KR1019940014822A KR19940014822A KR960002744A KR 960002744 A KR960002744 A KR 960002744A KR 1019940014822 A KR1019940014822 A KR 1019940014822A KR 19940014822 A KR19940014822 A KR 19940014822A KR 960002744 A KR960002744 A KR 960002744A
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KR
South Korea
Prior art keywords
film
forming
semiconductor device
device isolation
oxide film
Prior art date
Application number
KR1019940014822A
Other languages
Korean (ko)
Inventor
허상범
김용화
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940014822A priority Critical patent/KR960002744A/en
Publication of KR960002744A publication Critical patent/KR960002744A/en

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Abstract

본 발명은 반도체 소자의 소자분리막 형성방법에 관한 것으로, 소자분리영역을 최소화시켜 셀영역의 크기를 증가시키기 위해 실리콘 기판에 트렌치(Trench)를 형성하고 그 트렌치내에 절연특성이 우수한 산화막-질화막-산화막의 적층구조로 된 소자분리막을 형성시키므로써 소자의 신뢰성을 증대시킬 수 있는 반도체 소자의 소자분리막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a device isolation film of a semiconductor device, wherein a trench is formed in a silicon substrate in order to minimize the device isolation area and increase the size of the cell area, and the oxide film-nitride film-oxide film having excellent insulating properties therein. The present invention relates to a method for forming a device isolation film of a semiconductor device capable of increasing the reliability of the device by forming a device isolation film having a laminated structure.

※선택도 : 제4도※ Selectivity: 4th

Description

반도체 소자의 소자분리막 형성방법Device Separating Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제4도는 본 발명에 따른 반도체 소자의 소자분리막 형성방법을 설명하기 위한 소자의 단면도.1 to 4 are cross-sectional views of a device for explaining a method of forming a device isolation film of a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 소자분리막 형성방법에 있어서, 실리콘 기판(1)상에 감광막(2)을 도포하고 소자분리영역을 설정하기 위해 상기 감광막(2)을 패터닝한 후 식각공정을 진행하여 상기 실리콘 기판(1)에 트렌치(7)를 형성시키는 단계와, 상기 감광막(2)을 제거시키고 산화막(3), 질화막(4) 및 폴리실리콘층(5)을 순차적으로 형성시키는 단계와, 상기 단계로부터 노출된 부분의 산화막(5A), 질화막(4) 및 산화막(3)을 순차적으로 식각하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 소자분리막 형성방법.In the method of forming a device isolation film of a semiconductor device, the photoresist film 2 is coated on the silicon substrate 1, and the photoresist film 2 is patterned to set an element isolation region, followed by an etching process, thereby performing the etching process. Forming a trench (7), removing the photoresist film (2) and sequentially forming an oxide film (3), a nitride film (4) and a polysilicon layer (5), and a portion exposed from the step And sequentially etching the oxide film (5A), nitride film (4) and oxide film (3). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940014822A 1994-06-27 1994-06-27 Device Separating Method of Semiconductor Device KR960002744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014822A KR960002744A (en) 1994-06-27 1994-06-27 Device Separating Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014822A KR960002744A (en) 1994-06-27 1994-06-27 Device Separating Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR960002744A true KR960002744A (en) 1996-01-26

Family

ID=66686384

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014822A KR960002744A (en) 1994-06-27 1994-06-27 Device Separating Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR960002744A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100325610B1 (en) * 1999-05-27 2002-02-25 황인길 Shallow trench manufacturing method for isolating semiconductor devices
US6914307B2 (en) * 2000-11-21 2005-07-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100325610B1 (en) * 1999-05-27 2002-02-25 황인길 Shallow trench manufacturing method for isolating semiconductor devices
US6914307B2 (en) * 2000-11-21 2005-07-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
KR100502372B1 (en) * 2000-11-21 2005-07-22 미쓰비시덴키 가부시키가이샤 Semiconductor device and method of manufacturing the same

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