KR960002744A - Device Separating Method of Semiconductor Device - Google Patents
Device Separating Method of Semiconductor Device Download PDFInfo
- Publication number
- KR960002744A KR960002744A KR1019940014822A KR19940014822A KR960002744A KR 960002744 A KR960002744 A KR 960002744A KR 1019940014822 A KR1019940014822 A KR 1019940014822A KR 19940014822 A KR19940014822 A KR 19940014822A KR 960002744 A KR960002744 A KR 960002744A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- semiconductor device
- device isolation
- oxide film
- Prior art date
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- Element Separation (AREA)
Abstract
본 발명은 반도체 소자의 소자분리막 형성방법에 관한 것으로, 소자분리영역을 최소화시켜 셀영역의 크기를 증가시키기 위해 실리콘 기판에 트렌치(Trench)를 형성하고 그 트렌치내에 절연특성이 우수한 산화막-질화막-산화막의 적층구조로 된 소자분리막을 형성시키므로써 소자의 신뢰성을 증대시킬 수 있는 반도체 소자의 소자분리막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a device isolation film of a semiconductor device, wherein a trench is formed in a silicon substrate in order to minimize the device isolation area and increase the size of the cell area, and the oxide film-nitride film-oxide film having excellent insulating properties therein. The present invention relates to a method for forming a device isolation film of a semiconductor device capable of increasing the reliability of the device by forming a device isolation film having a laminated structure.
※선택도 : 제4도※ Selectivity: 4th
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도 내지 제4도는 본 발명에 따른 반도체 소자의 소자분리막 형성방법을 설명하기 위한 소자의 단면도.1 to 4 are cross-sectional views of a device for explaining a method of forming a device isolation film of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940014822A KR960002744A (en) | 1994-06-27 | 1994-06-27 | Device Separating Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940014822A KR960002744A (en) | 1994-06-27 | 1994-06-27 | Device Separating Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002744A true KR960002744A (en) | 1996-01-26 |
Family
ID=66686384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940014822A KR960002744A (en) | 1994-06-27 | 1994-06-27 | Device Separating Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960002744A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100325610B1 (en) * | 1999-05-27 | 2002-02-25 | 황인길 | Shallow trench manufacturing method for isolating semiconductor devices |
US6914307B2 (en) * | 2000-11-21 | 2005-07-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
-
1994
- 1994-06-27 KR KR1019940014822A patent/KR960002744A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100325610B1 (en) * | 1999-05-27 | 2002-02-25 | 황인길 | Shallow trench manufacturing method for isolating semiconductor devices |
US6914307B2 (en) * | 2000-11-21 | 2005-07-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
KR100502372B1 (en) * | 2000-11-21 | 2005-07-22 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device and method of manufacturing the same |
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