KR970053423A

KR970053423A - Method for manufacturing device isolation insulating film of semiconductor device

Info

Publication number: KR970053423A
Application number: KR1019950055945A
Authority: KR
Inventors: 김천수
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-23
Filing date: 1995-12-23
Publication date: 1997-07-31

Abstract

본 발명은 반도체 소자의 소자 분리 절연막 제조방법에 있어서, 반도체 기판(1) 상에 제1산화막(2)을 형성한 후 질화막 패턴(3)을 상기 제1산화막(2) 상에 형성하는 제1단계; 상기 질화막 패턴(3) 측벽에 질화막 스페이서(4)를 형성하여 제1산화막(2)을 노출시키는 제2단계; 상기 질화막 패턴(3)과 질화막 스페이서(4)를 식각 마스크로하여 상기 제1산화막(2)과 실리콘 기판(1)을 식각하여 트렌치를 형성하는 제3단계; 및 상기 트렌치 내부를 제2절연막으로 메우는 제4단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 소자 분리 절연막 제조방법에 관한 것이다.The present invention provides a method for manufacturing a device isolation insulating film of a semiconductor device, comprising: forming a first oxide film (2) on a semiconductor substrate (1) and then forming a nitride film pattern (3) on the first oxide film (2) step; A second step of forming a nitride film spacer 4 on sidewalls of the nitride film pattern 3 to expose the first oxide film 2; A third step of forming a trench by etching the first oxide layer 2 and the silicon substrate 1 using the nitride layer pattern 3 and the nitride layer spacer 4 as an etch mask; And a fourth step of filling the trench with a second insulating layer.

Description

Method for manufacturing device isolation insulating film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제4도는 본 발명에 따른 반도체 소자의 소자 분리 절연막 제조 공정 단면도.1 to 4 are cross-sectional views of a device isolation insulating film manufacturing process of a semiconductor device according to the present invention.

Claims

A method of manufacturing a device isolation insulating film of a semiconductor device, the method comprising: forming a first oxide film on a semiconductor substrate and then forming a nitride film pattern on the first oxide film; A second step of exposing a first oxide film by forming a nitride film spacer on sidewalls of the nitride film pattern; Forming a trench by etching the first oxide layer and the silicon substrate using the nitride pattern and the nitride spacer as an etch mask; And a fourth step of filling the inside of the trench with a second insulating layer.

The method of claim 1, wherein the third step further comprises forming a second oxide film on the surface of the trench after the trench is formed.

The method of claim 1, wherein the first oxide film has a thickness of 200 to 400 GPa.

The method of claim 1, wherein the nitride film pattern has a thickness of 1200 to 2000 GPa.

The method of claim 1, wherein the second insulating layer is a liquid phase oxide (LPO) film.

The method of claim 2, wherein the second oxide layer is formed at 800 ° C. for 6 to 15 seconds.

※ Note: The disclosure is based on the initial application.