KR970053462A

KR970053462A - Field oxide film formation method of a semiconductor device

Info

Publication number: KR970053462A
Application number: KR1019950065720A
Authority: KR
Inventors: 권오정; 김명제
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-29
Filing date: 1995-12-29
Publication date: 1997-07-31

Abstract

본 발명은 선폭이 작아지고 필요한 버즈빅을 형성하기 위해 실리콘을 리세스 시킨 후, 산화 공정을 2단계로 진행함으로써 질화막에 의한 필드 산화막 언그로운(In the present invention, after the silicon is recessed to reduce the line width and form the necessary buzz big, the oxidation process is carried out in two steps.

(Field Oxide Ungrown) 현상을 방지할 수 있도록 한 반도체 소자의 필드 산화막 형성 방법이 개시된다.Disclosed is a method of forming a field oxide film of a semiconductor device capable of preventing a field oxide ungrown phenomenon.

Description

Field oxide film formation method of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A 내지 1C도는 본 발명에 따른 반도체 소자의 필드 산화막 형성 방법을 설명하기 위한 단면도.1A to 1C are cross-sectional views for explaining a method for forming a field oxide film of a semiconductor device according to the present invention.

Claims

A method of forming a field oxide film of a semiconductor device, the method comprising sequentially forming a pad coral film and nitride on a silicon substrate, applying a photoresist over the entire structure, and etching the nitride by plasma etching using a mask Oxidizing a silicon substrate by a recess process on the etched and exposed silicon substrate, and then wet etching the oxide film grown on the silicon substrate by a primary oxidation process. And forming a second field oxide film by a secondary oxidation process after forming the first field oxide film.

The method of forming a field oxide film of a semiconductor device according to claim 1, wherein the pad oxide film is formed to a thickness of 150 kPa.

The method of forming a field oxide film of a semiconductor device according to claim 1, wherein the nitride is formed to a thickness of 2000 GPa.

The method of forming a field oxide film of a semiconductor device according to claim 1, wherein the first field oxide film is formed at a temperature of 800 ° C to a thickness of 200 ° C.

The method of claim 1, wherein the second field oxide film is formed at a temperature of 950 ° C. or higher.

The method of claim 1, wherein the silicon substrate is recessed after forming a spacer after nitride etching to reduce the line width of the field oxide.

※ Note: The disclosure is based on the initial application.