KR970053372A - Device Separation Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation film manufacturing method of a semiconductor device. The present invention relates to a device isolation film manufacturing method for forming grooves using a nitride film spacer during a LOCOS application process, wherein the pad oxide film and the first nitride film are formed on a semiconductor substrate. And a photosensitive film pattern for forming an amorphous silicon layer on top of the first nitride film, and forming an isolation region on the amorphous silicon layer, and using the photosensitive film pattern, an amorphous silicon pattern and a first Forming a nitride layer pattern and a pad oxide layer pattern, forming a second nitride layer on the entire surface of the structure, forming an etch spacer for the second nitride layer, etching the semiconductor substrate with the spacer as a mask to form a groove, Removing the amorphous silicon pattern and thermally oxidizing the semiconductor substrate at the groove to form an isolation layer; By removing the nitride film pattern, the spacer, and the pad oxide film pattern, the amorphous silicon layer acts as an etch barrier at the time of forming the nitride film pattern and the spacer, thereby preventing the occurrence of buzz and easily removing the polymer material.

Description

Device Separation Method of Semiconductor Device

Since this is an open matter, no full text was included.

2A through 2D are diagrams illustrating a process of fabricating an isolation layer of a semiconductor device in accordance with an embodiment of the present invention.

Claims (10)

Depositing a pad oxide film and a first nitride film on a semiconductor substrate, forming an amorphous silicon layer on the first nitride film, and forming a photoresist layer on the amorphous silicon layer. Forming an amorphous silicon pattern, a first nitride film pattern and a pad oxide film pattern using the photoresist pattern, removing the photoresist pattern, and forming a second nitride film on the entire surface of the structure. Forming a spacer; forming a spacer by etching the second nitride layer; forming a groove by etching the semiconductor substrate using the spacer as a mask; removing the amorphous silicon pattern; Thermally oxidizing the semiconductor substrate to form an isolation layer, and removing the first nitride layer pattern, the spacer, and the pad oxide layer pattern. A device isolation film manufacturing method for a semiconductor device, characterized in that the. The method of claim 1, wherein the pad oxide layer is formed to have a thickness of 50 to 150 GPa. The method of claim 1, wherein the first nitride film is formed to have a thickness of 1500 to 2500 kV. The method of claim 1, wherein the amorphous silicon layer is formed at 200 to 700 GPa. 2. The method of claim 1, wherein plasma dry etching is used to form the amorphous silicon pattern and the first nitride film pattern. The method of claim 1, wherein the second nitride film is formed to have a thickness of 100 to 700 GPa. 2. The method of claim 1, wherein plasma dry etching is used to form the spacers. The method of claim 1, wherein the semiconductor substrate is etched by 200 to 1000 때 when the groove is formed. The method of claim 1, wherein the step of forming the groove is omitted when the amorphous silicon layer is sufficiently thin. The method of claim 1, further comprising: forming an ARC film or an oxynitride film on the amorphous silicon layer, and forming an ARC film pattern or an oxynitride film pattern on the amorphous silicon layer. A device isolation film manufacturing method of a semiconductor device. ※ Note: The disclosure is based on the initial application.