KR950001945A - Field oxide film formation method - Google Patents

Field oxide film formation method Download PDF

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Publication number
KR950001945A
KR950001945A KR1019930010824A KR930010824A KR950001945A KR 950001945 A KR950001945 A KR 950001945A KR 1019930010824 A KR1019930010824 A KR 1019930010824A KR 930010824 A KR930010824 A KR 930010824A KR 950001945 A KR950001945 A KR 950001945A
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South Korea
Prior art keywords
film
oxide film
nitride film
etching
nitride
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KR1019930010824A
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Korean (ko)
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KR100248813B1 (en
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정의삼
윤용혁
이병석
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김주용
현대전자산업 주식회사
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Publication of KR950001945A publication Critical patent/KR950001945A/en
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Publication of KR100248813B1 publication Critical patent/KR100248813B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 반도체 소자 제조공정중 소자간의 전기적인 절연을 위한 소자 분리막인 필드산화막 형성방법에 관한 것으로, 실리콘기판(1) 상에 산화막(2)과 질화막(3)을 형성한 다음, 마스크(6)를 형성하고 상기 마스크(6)를 이용하여 질화막(3)을 소정부위 식각하는 제1단계, 국부산화공정을 진행하여 국부적으로 산화막(7)을 형성한 다음, 상기 잔여 질화막(3) 및 산화막(2,7)을 식각하여 완전히 제거하는 제2단계, 다시 산화막(20)과 질화막(30)을 증착하고 감광막을 사용하여 상기 산화막(7)이 제거된 부위에 마스크(4)를 형성하는 제3단계, 상기 마스크(4)를 이용하여 상기 질화막(30)을 소정부위 제거한 다음, 다시 질화막(8)을 증착하는 제4단계, 상기 질화막(8)을 건식식각하여 기존 질화막(30)의 모서리에 스페이서 질화막(8')을 형성하는 제5단계, 국부산화공정을 진행하여 낮은 단차지역에 필드산화막(5)을 형성하는 제6단계 및, 상기 잔여 질화막(30) 및 스페이서 질화막(8')을 식각하여 제거하는 제7단계를 포함하여 이루어짐으로써, 버즈빅 길이를 최소화시킬 수 있어 소자특성에 영향을 미치지 않고 소자간의 전기적인 절연을 효과적으로 수행할 수 있어, 반도체 소자의 고집적화에 따라 소자간 간격이 점점 작아지는 고집적 소자의 소자격리 공정에 효과적이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a field oxide film, which is a device isolation film for electrical insulation between devices in a semiconductor device manufacturing process, comprising forming an oxide film (2) and a nitride film (3) on a silicon substrate (1), followed by a mask (6). ) And etching the predetermined portion of the nitride film 3 using the mask 6, and performing a local oxidation process to locally form the oxide film 7, and then the residual nitride film 3 and the oxide film. A second step of completely removing (2,7) by etching, depositing the oxide film 20 and the nitride film 30, and forming a mask 4 on the portion where the oxide film 7 is removed using a photosensitive film. In step 3, the nitride layer 30 is removed by using the mask 4, and then, in the fourth step of depositing the nitride layer 8 again, the edges of the existing nitride layer 30 are dry-etched by etching the nitride layer 8 again. In the fifth step of forming a spacer nitride film 8 'in the And the seventh step of forming the field oxide film 5 in the low stepped region and the seventh step of etching and removing the residual nitride film 30 and the spacer nitride film 8 ', thereby minimizing the length of the buzz beak. It is possible to effectively conduct electrical isolation between devices without affecting device characteristics, and is effective in the device isolation process of a highly integrated device in which the spacing between devices becomes smaller with increasing integration of semiconductor devices.

Description

필드산화막 형성방법Field oxide film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일 실시예에 따른 필드산화막 형성 공정 단면도.2 is a cross-sectional view of a field oxide film forming process according to an embodiment of the present invention.

Claims (2)

반도체 소자 제조공정중 소자간의 전기적인 절연을 위한 소자 분리막인 필드산화막 형성방법에 있어서, 실리콘기판(1) 상에 산화막(2)과 질화막(3)을 형성한 다음, 마스크(6)를 형성하고 상기 마스크(6)를 이용하여 질화막(3)을 소정부위 식각하는 제1단계, 국부산화공정을 진행하여 국부적으로 산화막(7)을 형성한 다음, 상기 잔여 질화막(3) 및 산화막(2,7)을 식각하여 완전히 제거하는 제2단계, 다시 산화막(20)과 질화막(30)을 증착하고 감광막을 사용하여 상기 산화막(7)이 제거된 부위에 마스크(4)를 형성하는 제3단계, 상기 마스크(4)를 이용하여 상기 질화막(30)을 소정부위 제거한 다음, 다시 질화막(8)을 증착하는 제4단계, 상기 질화막(8)을 건식식각하여 기존 질화막(30)의 모서리에 스페이서 질화막(8')을 형성하는 제5단계, 국부산화공정을 진행하여 낮은 단차지역에 필드산화막(5)을 형성하는 제6단계 및, 상기 잔여 질화막(30) 및 스페이서 질화막(8')을 식각하여 제거하는 제7단계를 포함하여 이루어지는 것을 특징으로 하는 필드산화막 형성방법.In the field oxide film formation method, which is a device isolation film for electrical insulation between devices during a semiconductor device manufacturing process, an oxide film 2 and a nitride film 3 are formed on a silicon substrate 1, and then a mask 6 is formed. In the first step of etching a predetermined portion of the nitride film 3 using the mask 6, a local oxidation process is performed to locally form an oxide film 7, and then the remaining nitride film 3 and oxide films 2 and 7 are formed. ) Is a second step of etching and removing completely, a third step of depositing the oxide film 20 and the nitride film 30, and forming a mask (4) in the region where the oxide film 7 is removed using a photosensitive film, the The fourth step of removing the predetermined portion of the nitride film 30 using the mask 4, and then again depositing the nitride film 8, dry etching the nitride film 8 to the edge of the existing nitride film 30 in the spacer nitride film ( 8 ') to form a low stage And a sixth step, the remaining nitride film 30 and the nitride spacers (8 '), a field oxide film formation method comprising the seventh step of removing by etching to the area forming a field oxide film (5). 제1항에 있어서, 상기 제7단계는 더 넓은 소자형성지역을 형성하기 위하여 상기 필드산화막(5)을 습식식각으로 일정 두께 제거하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 필드산화막 형성방법.The method of claim 1, wherein the seventh step further comprises removing a predetermined thickness by wet etching the field oxide layer (5) to form a wider device formation region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930010824A 1993-06-14 1993-06-14 Method for manufacturing field oxidation film KR100248813B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930010824A KR100248813B1 (en) 1993-06-14 1993-06-14 Method for manufacturing field oxidation film

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Application Number Priority Date Filing Date Title
KR1019930010824A KR100248813B1 (en) 1993-06-14 1993-06-14 Method for manufacturing field oxidation film

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KR950001945A true KR950001945A (en) 1995-01-04
KR100248813B1 KR100248813B1 (en) 2000-03-15

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