KR950021362A - Semiconductor Device Isolation Method - Google Patents

Semiconductor Device Isolation Method Download PDF

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Publication number
KR950021362A
KR950021362A KR1019930028280A KR930028280A KR950021362A KR 950021362 A KR950021362 A KR 950021362A KR 1019930028280 A KR1019930028280 A KR 1019930028280A KR 930028280 A KR930028280 A KR 930028280A KR 950021362 A KR950021362 A KR 950021362A
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KR
South Korea
Prior art keywords
field
film
polysilicon
oxide film
region
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KR1019930028280A
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Korean (ko)
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KR960014450B1 (en
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오경택
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문정환
엘지일렉트론 주식회사
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Priority to KR1019930028280A priority Critical patent/KR960014450B1/en
Publication of KR950021362A publication Critical patent/KR950021362A/en
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Publication of KR960014450B1 publication Critical patent/KR960014450B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Abstract

본 발명은 반도체 기관에서 소자영역을 서로 격리시키기 위한 방법으로서, 실리콘 기판에 완충 산화막을 형성하고, 그위에 실리콘 질화막을 형성한후, 사진 식각 공정으로 이 질화막과 완충산화막을 비등방성 식각하여 제1 필드 영역을 노출시키는 단계, 폴리실리콘을 소정 두께로 데포지션하여 폴리실리콘막을 전면에 형 성하고, 사진식 각 공정으로 이 폴리실리콘막을 식각하여 제1필드영역보다 조금 좁은 제2필드영역을 노출시키는 단계, 필드 이온주입 공정을 실시한후, 필드 산화 공정을 실시하여 필드산화막을 형성하는 단계를 포함한다. 또 폴리실리콘막을 전면에 형성하고, 이를 비등방성식각하여 필드영역주변의 액티브영역 측벽에 폴리실리콘사이드월 사이드월을 형성하여 이 폴리실리콘 사이드월에 의하여 제1필드영역보다 좁아진 제2필드영역을 형성하여도 된다.The present invention provides a method for isolating device regions from each other in a semiconductor engine, wherein a buffer oxide film is formed on a silicon substrate, a silicon nitride film is formed thereon, and then the nitride film and the buffer oxide film are anisotropically etched by a photolithography process. Exposing the field region, depositing polysilicon to a predetermined thickness to form a polysilicon film on the entire surface, and etching the polysilicon film by photolithography to expose a second field region that is slightly narrower than the first field region. After performing the field ion implantation process, a field oxidation process is performed to form a field oxide film. In addition, a polysilicon film is formed on the entire surface, and anisotropically etched to form polysilicon sidewall sidewalls on the sidewalls of the active region around the field region, thereby forming a second field region narrower than the first field region by the polysilicon sidewalls. You may also do it.

Description

반도체 소자 격리방법Semiconductor Device Isolation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1 내지 3도는 반도체 소자를 격리하기 위한 종래의 방법을 설명하기 위한 도면이다.1 to 3 are diagrams for explaining a conventional method for isolating a semiconductor device.

제4도는 본 발명에 따른 반도체 소자 격리방법의 일예를 설명하기 위하여 반도체 기판의 일부를 단면으로 보인 도면이다.4 is a cross-sectional view of a portion of a semiconductor substrate in order to explain an example of a semiconductor device isolation method according to the present invention.

제5도는 본 발명에 따른 반도체 소자 격리방법의 또 다른 예를 설명하기 위하여 반도체 기판의 일부를 단면으로 보인 도면이다.5 is a cross-sectional view of a portion of a semiconductor substrate in order to explain another example of a method of isolating a semiconductor device according to the present invention.

Claims (6)

반도체 기판에서 소자영역을 서로 격리시키기 위한 방법으로서, 가) 실리콘 기판에 완충 산화막을 형성하고, 그 위에 실리콘 질화막을 형성한 후, 사진 식각 공정으로 이 질화막과 완충산화막을 비둥방성 식각하여 제1필드영역을 노출시키는 단계, 나) 폴리실리콘을 소정 두께로 데포지션하여 폴리실리콘막을 전면에 형성하고, 사진식각 공정으로 이 폴리실리콘막을 식각하여 제1필드영역보다 조금 좁은 제2필드영역을 노출시키는 단계, 다) 필드 이온주입 공정을 실시한 후, 필드 산화 공정을 실시하여 필드산화막을 형성하는 단계를 포함하여 이루어지는 반도체소자격리방법.As a method for isolating element regions from a semiconductor substrate, a) a buffer oxide film is formed on a silicon substrate, a silicon nitride film is formed thereon, and the nitride film and the buffer oxide film are anisotropically etched by a photolithography process to form a first field. Exposing the region, b) depositing polysilicon to a predetermined thickness to form a polysilicon film on the entire surface, and etching the polysilicon film by a photolithography process to expose a second field region that is slightly narrower than the first field region. And c) forming a field oxide film by performing a field oxidation process after performing a field ion implantation process. 제1항에 있어서, 상기 나)단계에서 폴리실리콘막은 500Å 이하의 두께로 형성하는 것이 특징인 반도체소자격리방법.The method of claim 1, wherein in step b), the polysilicon film is formed to a thickness of 500 kPa or less. 제1항에 있어서, 상기 다)단계 후에 상기 필드산화공정시 산화된 폴리실리콘막과 질화막 및 완충산화막을 제거하는 단계를 추가로 포함하는 것이 특징인 반도체소자격리방법.The method of claim 1, further comprising removing the oxidized polysilicon film, the nitride film, and the buffer oxide film during the field oxidation process after the c) step. 반도체 기판에서 소자영역을 서로 격리시키기 위한 방법으로서, 가)실리콘 기판에 완충 산화막을 형성하고, 그 위에 실리콘 질화막을 형성한 후, 사진 식각 공정으로 이 질화막과 완충산화막을 비등방성 식각하여 제1필드영역을 노출시키는 단계, 나) 폴리실리콘을 소정 두께로 데포지션하여 폴리실리콘막을 전면에 형성하고, 이를 비등방성식각하여 필드영역주변의 액티브영역 측벽에 폴리실리콘사이드월 사이드월을 형성하여 이 폴리실리콘 사이드월에 의하여 제1필드영역보다 좁아진 제2필드영역을 노출시키는 단계, 다) 필드 이온주입 공정을 실시한 후, 필드 산화 공정을 실시하여 필드산화막을 형성하는 단계를 포함하여 이루어지는 반도체소자격리방법.As a method for isolating element regions from a semiconductor substrate, a) a buffer oxide film is formed on a silicon substrate, a silicon nitride film is formed thereon, and then the nitride film and the buffer oxide film are anisotropically etched by a photolithography process to form a first field. Exposing the region, b) depositing polysilicon to a predetermined thickness to form a polysilicon film on the entire surface, and anisotropically etching it to form a polysilicon sidewall sidewall on the sidewall of the active region around the field region. Exposing a second field region narrower than the first field region by a sidewall; c) after performing a field ion implantation process, performing a field oxidation process to form a field oxide film. 제4항에 있어서, 상기 나)단계에서 폴리실리콘막은 500Å 이하의 두께로 형성하는 것이 특징인 반도체소자격리방법.5. The method of claim 4, wherein the polysilicon film is formed to a thickness of 500 GPa or less in step b). 제4항에 있어서, 상기 다)단계 후에 상기 필드산화공정시 산화된 폴리실리콘막과 질화막 및 완충산화막을 제거하는 단계를 추가로 포함하는 것이 특징인 반도체소자격리방법.The method of claim 4, further comprising removing the oxidized polysilicon film, the nitride film, and the buffer oxide film during the field oxidation process after the c) step. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930028280A 1993-12-17 1993-12-17 Method of isolation of a semiconductor device KR960014450B1 (en)

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KR950021362A true KR950021362A (en) 1995-07-26
KR960014450B1 KR960014450B1 (en) 1996-10-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100273230B1 (en) * 1997-09-29 2001-01-15 김영환 Vertical diffusion furnace for semiconductor process and driving method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100273230B1 (en) * 1997-09-29 2001-01-15 김영환 Vertical diffusion furnace for semiconductor process and driving method thereof

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